JPS6220709B2 - - Google Patents

Info

Publication number
JPS6220709B2
JPS6220709B2 JP55145696A JP14569680A JPS6220709B2 JP S6220709 B2 JPS6220709 B2 JP S6220709B2 JP 55145696 A JP55145696 A JP 55145696A JP 14569680 A JP14569680 A JP 14569680A JP S6220709 B2 JPS6220709 B2 JP S6220709B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
insulating film
region
electrode
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55145696A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5660052A (en
Inventor
Fujio Masuoka
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14569680A priority Critical patent/JPS5660052A/ja
Publication of JPS5660052A publication Critical patent/JPS5660052A/ja
Publication of JPS6220709B2 publication Critical patent/JPS6220709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP14569680A 1980-10-20 1980-10-20 Semiconductor memory device Granted JPS5660052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14569680A JPS5660052A (en) 1980-10-20 1980-10-20 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14569680A JPS5660052A (en) 1980-10-20 1980-10-20 Semiconductor memory device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50154769A Division JPS5279679A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5660052A JPS5660052A (en) 1981-05-23
JPS6220709B2 true JPS6220709B2 (enrdf_load_stackoverflow) 1987-05-08

Family

ID=15390984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14569680A Granted JPS5660052A (en) 1980-10-20 1980-10-20 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5660052A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989053A (en) * 1989-03-27 1991-01-29 Shelton Everett K Nonvolatile process compatible with a digital and analog double level metal MOS process
US5554545A (en) * 1994-09-01 1996-09-10 United Microelectronics Corporation Method of forming neuron mosfet with different interpolysilicon oxide thickness

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3834959A (en) * 1972-06-30 1974-09-10 Ibm Process for the formation of selfaligned silicon and aluminum gates

Also Published As

Publication number Publication date
JPS5660052A (en) 1981-05-23

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