JPS6294955A - 素子分離方法 - Google Patents
素子分離方法Info
- Publication number
- JPS6294955A JPS6294955A JP23575785A JP23575785A JPS6294955A JP S6294955 A JPS6294955 A JP S6294955A JP 23575785 A JP23575785 A JP 23575785A JP 23575785 A JP23575785 A JP 23575785A JP S6294955 A JPS6294955 A JP S6294955A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- trenches
- oxide film
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims abstract description 10
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 39
- 238000000151 deposition Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- -1 hydride compound Chemical class 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 3
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- JWKGSQBJYQRIQM-UHFFFAOYSA-N [O].[Si](Cl)(Cl)(Cl)Cl Chemical compound [O].[Si](Cl)(Cl)(Cl)Cl JWKGSQBJYQRIQM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 238000009751 slip forming Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- 101100428016 Caenorhabditis elegans upp-1 gene Proteins 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 101100130497 Drosophila melanogaster Mical gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101100345589 Mus musculus Mical1 gene Proteins 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23575785A JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23575785A JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6294955A true JPS6294955A (ja) | 1987-05-01 |
| JPH0531825B2 JPH0531825B2 (enrdf_load_stackoverflow) | 1993-05-13 |
Family
ID=16990781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23575785A Granted JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6294955A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105431376A (zh) * | 2013-07-26 | 2016-03-23 | 3M创新有限公司 | 制备纳米结构和纳米结构化制品的方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513904A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Semiconductor device and its manufacturing method |
-
1985
- 1985-10-21 JP JP23575785A patent/JPS6294955A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513904A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Semiconductor device and its manufacturing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105431376A (zh) * | 2013-07-26 | 2016-03-23 | 3M创新有限公司 | 制备纳米结构和纳米结构化制品的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0531825B2 (enrdf_load_stackoverflow) | 1993-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |