JPS6292637U - - Google Patents
Info
- Publication number
- JPS6292637U JPS6292637U JP18589085U JP18589085U JPS6292637U JP S6292637 U JPS6292637 U JP S6292637U JP 18589085 U JP18589085 U JP 18589085U JP 18589085 U JP18589085 U JP 18589085U JP S6292637 U JPS6292637 U JP S6292637U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- light
- amorphous semiconductor
- film forming
- semiconductor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図は本考案の一実施例の断面図、第２図は
従来装置の一例の断面図、第３図、第４図はそれ
ぞれ本考案の異なる実施例の断面図である。 １：反応槽、２：上部電極、３：下部電極、５
：ガス供給口、６：ガス排気口、８：ガラス基板
、９：透明導電膜、１１：ハロゲンランプ、１２
：窓、１３：冷却水管、１４：紫外光源。
従来装置の一例の断面図、第３図、第４図はそれ
ぞれ本考案の異なる実施例の断面図である。 １：反応槽、２：上部電極、３：下部電極、５
：ガス供給口、６：ガス排気口、８：ガラス基板
、９：透明導電膜、１１：ハロゲンランプ、１２
：窓、１３：冷却水管、１４：紫外光源。
Claims (1)
- 【実用新案登録請求の範囲】 (1) グロー放電もしくは、光の照射により原料
ガスを分解して基板上に非晶質半導体薄膜を形成
するものにおいて、薄膜形成部分に可視光から赤
外光の範囲の光を照射する光源を備えたことを特
徴とする非晶質半導体薄膜形成装置。 (2) 実用新案登録請求の範囲第１項記載の装置
において、基板の薄膜形成面と反対側に冷却手段
を備えたことを特徴とする非晶質半導体薄膜形成
装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18589085U JPS6292637U (ja) | 1985-12-02 | 1985-12-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18589085U JPS6292637U (ja) | 1985-12-02 | 1985-12-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6292637U true JPS6292637U (ja) | 1987-06-13 |
Family
ID=31134939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18589085U Pending JPS6292637U (ja) | 1985-12-02 | 1985-12-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6292637U (ja) |
-
1985
- 1985-12-02 JP JP18589085U patent/JPS6292637U/ja active Pending
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