JPS6286740A - 半導体ウエハ検査方法 - Google Patents

半導体ウエハ検査方法

Info

Publication number
JPS6286740A
JPS6286740A JP22673585A JP22673585A JPS6286740A JP S6286740 A JPS6286740 A JP S6286740A JP 22673585 A JP22673585 A JP 22673585A JP 22673585 A JP22673585 A JP 22673585A JP S6286740 A JPS6286740 A JP S6286740A
Authority
JP
Japan
Prior art keywords
pattern
foreign object
wafer
inspection
foreign
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22673585A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0562821B2 (enrdf_load_stackoverflow
Inventor
Yoshimasa Oshima
良正 大島
Mitsuyoshi Koizumi
小泉 光義
Yoshihiko Yamauchi
良彦 山内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22673585A priority Critical patent/JPS6286740A/ja
Publication of JPS6286740A publication Critical patent/JPS6286740A/ja
Publication of JPH0562821B2 publication Critical patent/JPH0562821B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP22673585A 1985-10-14 1985-10-14 半導体ウエハ検査方法 Granted JPS6286740A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22673585A JPS6286740A (ja) 1985-10-14 1985-10-14 半導体ウエハ検査方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22673585A JPS6286740A (ja) 1985-10-14 1985-10-14 半導体ウエハ検査方法

Publications (2)

Publication Number Publication Date
JPS6286740A true JPS6286740A (ja) 1987-04-21
JPH0562821B2 JPH0562821B2 (enrdf_load_stackoverflow) 1993-09-09

Family

ID=16849782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22673585A Granted JPS6286740A (ja) 1985-10-14 1985-10-14 半導体ウエハ検査方法

Country Status (1)

Country Link
JP (1) JPS6286740A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319733B1 (en) 1999-04-22 2001-11-20 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device, semiconductor equipment and manufacturing system
JP2002031606A (ja) * 2000-05-12 2002-01-31 Matsushita Electric Ind Co Ltd 品質評価装置、品質評価方法、品質表示装置、品質表示方法および品質評価システム
JP2007271340A (ja) * 2006-03-30 2007-10-18 Fujitsu Ltd 欠陥検査装置及び方法
JP2021110646A (ja) * 2020-01-10 2021-08-02 東京エレクトロン株式会社 載置台における異物の検出方法、及び、検出装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319733B1 (en) 1999-04-22 2001-11-20 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device, semiconductor equipment and manufacturing system
JP2002031606A (ja) * 2000-05-12 2002-01-31 Matsushita Electric Ind Co Ltd 品質評価装置、品質評価方法、品質表示装置、品質表示方法および品質評価システム
JP2007271340A (ja) * 2006-03-30 2007-10-18 Fujitsu Ltd 欠陥検査装置及び方法
JP2021110646A (ja) * 2020-01-10 2021-08-02 東京エレクトロン株式会社 載置台における異物の検出方法、及び、検出装置

Also Published As

Publication number Publication date
JPH0562821B2 (enrdf_load_stackoverflow) 1993-09-09

Similar Documents

Publication Publication Date Title
JPS6289336A (ja) 半導体用基板上の異物検出装置
US5539514A (en) Foreign particle inspection apparatus and method with front and back illumination
US7499156B2 (en) Closed region defect detection system
US6282309B1 (en) Enhanced sensitivity automated photomask inspection system
JP2796316B2 (ja) 欠陥または異物の検査方法およびその装置
IL125216A (en) Apparatus and method for microscopic inspection of articles
KR970000781B1 (ko) 이물 검사 장치
JP2003185593A (ja) ウェーハ外観検査装置
JPS6286740A (ja) 半導体ウエハ検査方法
JP2822937B2 (ja) 半導体装置の製造システム及び欠陥検査方法
JPS5982727A (ja) 異物検出方法及びその装置
JPS5862543A (ja) 欠陥検査装置
JPH0523061B2 (enrdf_load_stackoverflow)
KR100255254B1 (ko) 반도체의 생산방법 및 그 제조설비
JP3020546B2 (ja) 異物検査装置
JP3070748B2 (ja) レチクル上の欠陥検出方法及びその装置
JP3064459B2 (ja) マスクの異物検査方法
JPH03148049A (ja) 欠陥検査装置
JPS61140804A (ja) パタ−ン検査装置
JPH11274256A (ja) 試料検査装置
Hara et al. Automating inspection of aluminum circuit pattern of LSI wafers
JP2609638B2 (ja) 異物検査装置
JPH0216438A (ja) 異物検査装置及びその方法
TW202303127A (zh) 缺陷檢查裝置、缺陷檢查方法及空白光罩之製造方法
JPH0798281A (ja) パターン欠陥検出方法及びパターン欠陥検出装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees