JPS6277447A - 金メッキを施した直径100μm以下の銅細線の成形方法 - Google Patents
金メッキを施した直径100μm以下の銅細線の成形方法Info
- Publication number
- JPS6277447A JPS6277447A JP60218416A JP21841685A JPS6277447A JP S6277447 A JPS6277447 A JP S6277447A JP 60218416 A JP60218416 A JP 60218416A JP 21841685 A JP21841685 A JP 21841685A JP S6277447 A JPS6277447 A JP S6277447A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- copper
- diameter
- gold
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/431—Pre-treatment of the preform connector
- H01L2224/4312—Applying permanent coating, e.g. in-situ coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
(産業上の利用分野つ
本発明は、コンピューター等に利用される高密度磁気記
憶媒体(フロッピーディスク)等のm気ヘッド及びマイ
クロモーター等に使用されるリード線に関するものであ
る。
憶媒体(フロッピーディスク)等のm気ヘッド及びマイ
クロモーター等に使用されるリード線に関するものであ
る。
(従来の技術とその問題点)
従来、金メッキを施した銅f#fI線の成形方法は、直
径約50μmに形成した無10司腺に直に純金メッキを
施し、熱処理を行った後にウレタン被膜を、施していた
。
径約50μmに形成した無10司腺に直に純金メッキを
施し、熱処理を行った後にウレタン被膜を、施していた
。
ところが、この成形方法はメッキ結晶が粗いためボンデ
ィング性が悪く、かつウレタン被膜が不均一となってピ
ンホールの発生を招いていた。
ィング性が悪く、かつウレタン被膜が不均一となってピ
ンホールの発生を招いていた。
メッキ結晶を細かくする方法としてAu−C。
及びAu−Ni等の合金メッキを施す方法もあるが、こ
の方法では導体の電気抵抗が犬きくなシ、かつ、ボンデ
ィング性も悪いため信頼性におとっていた。
の方法では導体の電気抵抗が犬きくなシ、かつ、ボンデ
ィング性も悪いため信頼性におとっていた。
(発明が解決しようとする技術的課題)以上の問題を解
決しようとする本発明の技術的課題は、メッキの結晶を
細かくしてボンディング性及びウレタン被覆性を向上さ
せると共に電気抵抗を小さくすることである。
決しようとする本発明の技術的課題は、メッキの結晶を
細かくしてボンディング性及びウレタン被覆性を向上さ
せると共に電気抵抗を小さくすることである。
(技術的課題を達成するための技術的手段)以上の技術
的課題を達成するための本発明の技術的手段は、銅又は
銅合金縁に純金メッキを施した後、ダイスを通して引抜
加工を行って所定の線径に伸線し、然る後、熱処理およ
び杷縁被膜をコーティングすることである。
的課題を達成するための本発明の技術的手段は、銅又は
銅合金縁に純金メッキを施した後、ダイスを通して引抜
加工を行って所定の線径に伸線し、然る後、熱処理およ
び杷縁被膜をコーティングすることである。
ここに鋼線とは、例えば無酸素銅し、タフピッチ銅線等
であシ、銅合金縁とは例えば銀入9嗣線、罎入シ銅線等
でろシ、これらに純金メッキを施す。
であシ、銅合金縁とは例えば銀入9嗣線、罎入シ銅線等
でろシ、これらに純金メッキを施す。
また、引抜加工は伸線を行なうと共に、純金メッキの厚
さ及び表面を平滑にしてピンホールを防止し、かつウレ
タン被膜の均一化を図るものであり、ウレタン被覆は絶
縁性及び耐電圧性を高めるために施されるものである。
さ及び表面を平滑にしてピンホールを防止し、かつウレ
タン被膜の均一化を図るものであり、ウレタン被覆は絶
縁性及び耐電圧性を高めるために施されるものである。
(発明の効果)
本発明は以上の様な方法により @ Mb ?iAを形
成したことによ多下記の効果を有する。
成したことによ多下記の効果を有する。
■ 純金メッキを施した後、ダイスを通して引抜加工を
行って所定の線径に伸線すちので、メッキの厚さが均一
で、かつ光間が、1.面光沢となってボンディング性の
向上を図ることができると共に、ウレタン被aを均一に
施すことができ、ピンホールの発生を防止することがで
きる。
行って所定の線径に伸線すちので、メッキの厚さが均一
で、かつ光間が、1.面光沢となってボンディング性の
向上を図ることができると共に、ウレタン被aを均一に
施すことができ、ピンホールの発生を防止することがで
きる。
■ 純金メッキを施すことにより、硬質金メッキを施し
た銅細線と比べ、電気抵抗を小さくすることができる。
た銅細線と比べ、電気抵抗を小さくすることができる。
(実施例)
本発明の実施例は直径100μm O)無酸素鋼の母線
に純金メッキを施した後、引抜加工により直径50μm
(メッキ厚さ2μm)に伸線したものである。
に純金メッキを施した後、引抜加工により直径50μm
(メッキ厚さ2μm)に伸線したものである。
超音波ボンディング後のプルテストにおけるボンディン
グ強度は次表(1)に示す通シで217、比較品のは直
径46μmの銅線に純金メッキ2μmを施したものでわ
シ、比較品■は、直径46μmの銅線にAu−Co合金
メッキを2μm施したものである。比較品■■共に、メ
ッキ後の引抜加工は行なっていない。実施品、比較品共
にメッキ後フルアニールを行なっている。
グ強度は次表(1)に示す通シで217、比較品のは直
径46μmの銅線に純金メッキ2μmを施したものでわ
シ、比較品■は、直径46μmの銅線にAu−Co合金
メッキを2μm施したものである。比較品■■共に、メ
ッキ後の引抜加工は行なっていない。実施品、比較品共
にメッキ後フルアニールを行なっている。
表 CI)
この結果、ボンディング性の向上を図ることができろこ
とを確認することができた。
とを確認することができた。
1だ、次表(2)はウレタンの被覆性の試験結果でらり
、実施品は前記派の陽1,2.3の実施品に夫々5μm
のウレタンを塗布したものである。
、実施品は前記派の陽1,2.3の実施品に夫々5μm
のウレタンを塗布したものである。
弐 (2)
この結果、ウレタンの被覆を均一に施すことカテキ、か
つ、ピンホールの発生を防ぐことを6&認することがで
きた。
つ、ピンホールの発生を防ぐことを6&認することがで
きた。
次表(3)は表面抵抗測定の結果を示したものでるる。
実施品階1は直径100μmの無酸素鋼の母線に純金メ
ッキを行った後、直径50pmに伸線し、フルアニール
ものであり、メッキ厚さは一2μmである。
ッキを行った後、直径50pmに伸線し、フルアニール
ものであり、メッキ厚さは一2μmである。
またNn2は直径46μmの銅線にAu−Co合金メッ
キを2μm施した後フルアニールしたものでおる。
キを2μm施した後フルアニールしたものでおる。
餞 (3)
この結果、硬質金メッキを施した銅細線に比べ電気抵抗
を小さくすることができることを確認することができた
。
を小さくすることができることを確認することができた
。
Claims (1)
- 銅又は銅合金縁に純金メッキを施した後、ダイスを通し
て引抜加工を行って所定の線径に伸線し、然る後、熱処
理および絶縁皮膜をコーティングすることを特徴とする
金メッキを施した銅細線の成形方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60218416A JPH07122121B2 (ja) | 1985-09-30 | 1985-09-30 | 金メッキを施した直径100μm以下の銅細線の成形方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60218416A JPH07122121B2 (ja) | 1985-09-30 | 1985-09-30 | 金メッキを施した直径100μm以下の銅細線の成形方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6277447A true JPS6277447A (ja) | 1987-04-09 |
JPH07122121B2 JPH07122121B2 (ja) | 1995-12-25 |
Family
ID=16719569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60218416A Expired - Lifetime JPH07122121B2 (ja) | 1985-09-30 | 1985-09-30 | 金メッキを施した直径100μm以下の銅細線の成形方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07122121B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1279491A1 (en) * | 2001-07-23 | 2003-01-29 | Tao-Kuang Chang | Gold wire for use in semiconductor packaging and high-frequency signal transmission and its fabrication method |
CN103474408A (zh) * | 2013-09-26 | 2013-12-25 | 辽宁凯立尔电子科技有限公司 | 一种表面有镀金层的金银合金键合丝及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4933833A (ja) * | 1972-07-29 | 1974-03-28 | ||
JPS5648589A (en) * | 1979-09-28 | 1981-05-01 | Tokyo Shibaura Electric Co | Nuclear reactor control rod drive |
JPS5679810A (en) * | 1979-12-03 | 1981-06-30 | Sumitomo Electric Industries | Method of manufacturing lead wire for electronic part |
JPS5928530A (ja) * | 1982-08-09 | 1984-02-15 | Fujikura Ltd | エナメル線の製造方法 |
JPS6036000A (ja) * | 1983-08-04 | 1985-02-23 | Toshiba Corp | ディ−ゼル発電設備における負荷役入時の運転方法 |
JPS60118343A (ja) * | 1983-11-29 | 1985-06-25 | Sumitomo Electric Ind Ltd | 複合線の製造法 |
-
1985
- 1985-09-30 JP JP60218416A patent/JPH07122121B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4933833A (ja) * | 1972-07-29 | 1974-03-28 | ||
JPS5648589A (en) * | 1979-09-28 | 1981-05-01 | Tokyo Shibaura Electric Co | Nuclear reactor control rod drive |
JPS5679810A (en) * | 1979-12-03 | 1981-06-30 | Sumitomo Electric Industries | Method of manufacturing lead wire for electronic part |
JPS5928530A (ja) * | 1982-08-09 | 1984-02-15 | Fujikura Ltd | エナメル線の製造方法 |
JPS6036000A (ja) * | 1983-08-04 | 1985-02-23 | Toshiba Corp | ディ−ゼル発電設備における負荷役入時の運転方法 |
JPS60118343A (ja) * | 1983-11-29 | 1985-06-25 | Sumitomo Electric Ind Ltd | 複合線の製造法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1279491A1 (en) * | 2001-07-23 | 2003-01-29 | Tao-Kuang Chang | Gold wire for use in semiconductor packaging and high-frequency signal transmission and its fabrication method |
CN103474408A (zh) * | 2013-09-26 | 2013-12-25 | 辽宁凯立尔电子科技有限公司 | 一种表面有镀金层的金银合金键合丝及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH07122121B2 (ja) | 1995-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI231317B (en) | Electrodeposited copper foil with its surface prepared, process for producing the same and use thereof | |
US2286759A (en) | Method of making insulated wire of small or irregular cross-section | |
EP0696940B1 (en) | Wire plating | |
JPS6277447A (ja) | 金メッキを施した直径100μm以下の銅細線の成形方法 | |
JPH11307711A (ja) | 半導体パッケ―ジ用リ―ドフレ―ム及びリ―ドフレ―ムメッキ方法 | |
JP2000107943A (ja) | ワイヤ放電加工用電極線 | |
JPS6033385A (ja) | ステンレス鋼線及びステンレス製品の製造方法 | |
JPH10130882A (ja) | 電子ワイヤー用複合金属線材及びその製造方法 | |
JPS5943973B2 (ja) | Agメッキ用リ−ドフレ−ム素材の製法 | |
JPH04187335A (ja) | 導電性ばね用鋼線 | |
CN114347586B (zh) | 一种铜-铜复合带材、制备方法以及应用 | |
JPS6392005A (ja) | 微細パタ−ンコイル | |
TWI681827B (zh) | 金屬線之製造方法及其結構 | |
CN114005807A (zh) | 一种镀金钯铜基键合丝及其制备方法 | |
JP2861607B2 (ja) | リードフレーム用金属条及びその製造方法 | |
JP2892489B2 (ja) | 磁 心 | |
JPS59177817A (ja) | 電気接触子 | |
JPH0236680B2 (ja) | Koshuhasenrinyozetsuendensennoseizoho | |
JPS58104193A (ja) | 金めつき膜の製造方法 | |
KR800001622B1 (ko) | 리이드 프레임용 금속 스트립 | |
CN115011835A (zh) | 一种镀银键合铜丝及其制备方法、应用 | |
JPH0310085A (ja) | 基板の表面処理方法 | |
JPS61146422A (ja) | ワイヤ−放電加工用電極線の製造方法 | |
JPH0394095A (ja) | 錫および錫合金めっき材 | |
JPS62118554A (ja) | 半導体用フレ−ムの製造方法 |