JPS627719B2 - - Google Patents
Info
- Publication number
- JPS627719B2 JPS627719B2 JP56163020A JP16302081A JPS627719B2 JP S627719 B2 JPS627719 B2 JP S627719B2 JP 56163020 A JP56163020 A JP 56163020A JP 16302081 A JP16302081 A JP 16302081A JP S627719 B2 JPS627719 B2 JP S627719B2
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- layer
- active layer
- mesa stripe
- current blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16302081A JPS5864086A (ja) | 1981-10-13 | 1981-10-13 | 埋め込みヘテロ構造半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16302081A JPS5864086A (ja) | 1981-10-13 | 1981-10-13 | 埋め込みヘテロ構造半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5864086A JPS5864086A (ja) | 1983-04-16 |
| JPS627719B2 true JPS627719B2 (OSRAM) | 1987-02-18 |
Family
ID=15765662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16302081A Granted JPS5864086A (ja) | 1981-10-13 | 1981-10-13 | 埋め込みヘテロ構造半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5864086A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0955681A3 (en) | 1994-09-28 | 2000-11-29 | Nippon Telegraph And Telephone Corporation | Optical semiconductor device and method of fabricating the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513315A (en) * | 1978-07-10 | 1980-01-30 | Matsushita Electric Works Ltd | Beam connection apparatus |
| JPS5548990A (en) * | 1978-09-21 | 1980-04-08 | Nec Corp | Semiconductor joining laser forming method |
| JPS5639072A (en) * | 1979-09-07 | 1981-04-14 | Wako Pure Chem Ind Ltd | Novel oxidatively coloring substance |
-
1981
- 1981-10-13 JP JP16302081A patent/JPS5864086A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5864086A (ja) | 1983-04-16 |
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