JPS627688B2 - - Google Patents

Info

Publication number
JPS627688B2
JPS627688B2 JP53127988A JP12798878A JPS627688B2 JP S627688 B2 JPS627688 B2 JP S627688B2 JP 53127988 A JP53127988 A JP 53127988A JP 12798878 A JP12798878 A JP 12798878A JP S627688 B2 JPS627688 B2 JP S627688B2
Authority
JP
Japan
Prior art keywords
electron beam
resist
pattern
wafer substrate
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53127988A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5555533A (en
Inventor
Hisashi Sugyama
Kyozo Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP12798878A priority Critical patent/JPS5555533A/ja
Publication of JPS5555533A publication Critical patent/JPS5555533A/ja
Publication of JPS627688B2 publication Critical patent/JPS627688B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electron Beam Exposure (AREA)
JP12798878A 1978-10-18 1978-10-18 Method of manufacturing semiconductor device Granted JPS5555533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12798878A JPS5555533A (en) 1978-10-18 1978-10-18 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12798878A JPS5555533A (en) 1978-10-18 1978-10-18 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5555533A JPS5555533A (en) 1980-04-23
JPS627688B2 true JPS627688B2 (cs) 1987-02-18

Family

ID=14973662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12798878A Granted JPS5555533A (en) 1978-10-18 1978-10-18 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5555533A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5812642B2 (ja) * 2011-03-28 2015-11-17 キヤノン株式会社 荷電粒子線描画方法、およびそれを用いた物品の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606107B2 (ja) * 1976-03-31 1985-02-15 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5555533A (en) 1980-04-23

Similar Documents

Publication Publication Date Title
JPS6323657B2 (cs)
US4377627A (en) Microminiature solid state device manufacture with automatic alignment of sub-patterns
JP3512945B2 (ja) パターン形成方法及びパターン形成装置
US4009057A (en) Method of manufacturing a semiconductor device
KR100403933B1 (ko) 마스크의 형성방법
JP3287333B2 (ja) 電子線露光用マスク、その製造方法及び半導体装置の製造方法
US5693548A (en) Method for making T-gate of field effect transistor
JPH0219970B2 (cs)
JPS627688B2 (cs)
JP2867248B2 (ja) 位相シフトマスクの製造方法
JP2822938B2 (ja) 重ね合わせ精度の測定方法
JPS62241338A (ja) パタ−ン形成方法
JPS6040184B2 (ja) 半導体装置の製造方法
JPS61105837A (ja) 電子ビ−ム露光方法
JPS5811511B2 (ja) イオンエツチング方法
JPS60111425A (ja) 位置合わせ用マ−クの形成方法
JP2607460B2 (ja) 露光方法
JPS606539B2 (ja) 半導体装置の製造方法
JPS58199525A (ja) Ｘ線用マスク
US6799312B1 (en) Dark line CD and XY-CD improvement method of the variable shaped beam lithography in mask or wafer making
JPS6257253B2 (cs)
JPH0738371B2 (ja) 位置検出用マークの形成方法
JPS5942971B2 (ja) 半導体装置の製造方法
JPH1041309A (ja) 半導体装置の配線形成方法
JPS6252850B2 (cs)