JPS6276786A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS6276786A JPS6276786A JP60217656A JP21765685A JPS6276786A JP S6276786 A JPS6276786 A JP S6276786A JP 60217656 A JP60217656 A JP 60217656A JP 21765685 A JP21765685 A JP 21765685A JP S6276786 A JPS6276786 A JP S6276786A
- Authority
- JP
- Japan
- Prior art keywords
- photoactive layer
- electrode film
- semiconductor photoactive
- power generation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000010248 power generation Methods 0.000 claims description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 12
- 230000000873 masking effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分骨
本発明は光照射を受けると起電力を発生する光起電力装
置の製造方法に関し、本発明により製造された光起電力
装置は特に電卓、腕時計、電子ゲーム等の民生用小型電
子機器の電源として用いられる。Detailed Description of the Invention (a) Industrial Application The present invention relates to a method for manufacturing a photovoltaic device that generates an electromotive force when irradiated with light. Used as a power source for small consumer electronic devices such as calculators, watches, and electronic games.
（ロ）従来の技術
基板の絶縁表面に複数の発電領域を設けそれら発電領域
を電気的に直列接続した光起電力装置は例えば特公昭５
８−２１８２７’ｊ）公報に開示された如く既に知られ
ており、上述の如き電卓等の民生用小型電子機器の電源
として実用化されている。祈る先行技術に１Ｊｆｌ示さ
れた光起電力装置の特徴は、複数の発電領域を電気的に
直列接続する構造にも拘らず、光照射を受けると電子及
び正孔の光キャリアを発生する半導体光活性層を各個別
の発電領域毎に分割しなくても良いために、祈る半導体
光活性層のバターニングに微細な加工を必要としない。(b) Conventional technology A photovoltaic device in which a plurality of power generation regions are provided on the insulating surface of a substrate and these power generation regions are electrically connected in series is known, for example, from the Japanese Patent Publication No. 5
8-21827'j) is already known as disclosed in Japanese Patent Publication No. 8-21827'j), and has been put to practical use as a power source for small consumer electronic devices such as the above-mentioned calculators. The feature of the photovoltaic device shown in the prior art is that, despite its structure in which multiple power generation regions are electrically connected in series, it is a semiconductor photovoltaic device that generates photocarriers of electrons and holes when irradiated with light. Since the active layer does not have to be divided into individual power generation regions, fine processing is not required for patterning the semiconductor photoactive layer.
従って、上記先行技術に開示された半導体光活性層のバ
ターニングは半導体光活性層の形成時に、？＆着しては
ならないところをマスクで覆うマスキング法が用いられ
、製造工程の簡略化を可能とし、製造コストの低減に寄
与していた。Therefore, the patterning of the semiconductor photoactive layer disclosed in the above-mentioned prior art is performed during the formation of the semiconductor photoactive layer. A masking method was used to cover areas that should not be covered with a mask, simplifying the manufacturing process and contributing to lower manufacturing costs.
然し乍ら、祈るマスキング法Ｖｉｙ造コストの低減に寄
与するものの、マスクを半導体光活性層の形成時に支持
基板に対して該光活性層が被着すべき所定箇所を露出せ
しめた状態で装着しなければならず正確な位置決めが要
求されるのみならず、マスクが正確な位置に装置された
としてもマスクと支持基板表面との間に僅かながらも隙
間が形成されるために、祈る隙間に半導体材料が回り込
み半導体光活性層の周縁部分に上記半導体材料の回り込
みによる泌み出し部分が発生しパターン精度の低下を招
く。祈る半導体材料の回シ込みは半導体光活性層の形成
時に加熱されたマスクが支持基板との熱膨張係数の差や
熱歪に基づき撓んだ際に大きくなり、また半導体光活性
層の膜層が薄いほど回り込みによる影響は著しい。However, although the masking method contributes to a reduction in manufacturing costs, it is necessary to attach the mask to the supporting substrate at the time of forming the semiconductor photoactive layer while exposing a predetermined portion where the photoactive layer is to be deposited. Not only is accurate positioning required, but even if the mask is placed in the correct position, a small gap will be formed between the mask and the surface of the support substrate, so it is difficult for the semiconductor material to fill the gap. A leaking portion due to the wraparound of the semiconductor material occurs at the peripheral edge of the wraparound semiconductor photoactive layer, resulting in a decrease in pattern accuracy. The shrinkage of the semiconductor material becomes large when the mask heated during the formation of the semiconductor photoactive layer is bent due to the difference in thermal expansion coefficient with the supporting substrate or due to thermal strain, and also when the film layer of the semiconductor photoactive layer is bent. The thinner the line, the more significant the influence of wraparound.
一方、半導体光活性層のバターニングに、微細加工に富
むフォトリソグラフィ法を用いれば、マスキング法の持
つ半導体材料の回り込みによる泌み出し部分の発生はな
くなるものの、工程が煩雑となり製造コストの上昇の原
因となるために、低廉価が要求される民生用小型電子機
器の電源として用いられる光起電力装置の製造には不向
きである。On the other hand, if the photolithography method, which is rich in microfabrication, is used to pattern the semiconductor photoactive layer, the generation of oozing parts caused by the wrapping of the semiconductor material, which is the case with masking methods, can be eliminated, but the process becomes complicated and the manufacturing cost increases. Therefore, it is not suitable for manufacturing photovoltaic devices used as power sources for small consumer electronic devices that require low cost.
（ハ）発明が解決しようとする問題点
本発ＦｉＡ製造方法は複数の発電領域を電気的に直列接
続した光起電力装置に於いて、半導体光活性層を各個別
の発電領域毎に分割することなく、祈る光活性層のパタ
ーニングに従来のマスキング法やリーングラフィ法−の
持つ欠点を解決しようとするものである。(c) Problems to be solved by the invention The FiA manufacturing method of the present invention divides the semiconductor photoactive layer into individual power generation regions in a photovoltaic device in which a plurality of power generation regions are electrically connected in series. The present invention attempts to solve the drawbacks of conventional masking methods and lean photography methods for patterning a photoactive layer.
に）問題点を解決するための手段
本発明製造方法は上記問題点を解決すべく、基板の絶縁
表面に複数の発電領域毎に、該発電領域から基板の同一
周縁に向って延出した延長部分を有する第１電極膜を分
割配置し、この第１電極膜及びその延長部分を含んで上
記基板の絶縁表面のほぼ全面に半導体光活性層を設けた
後、上記第１電極膜の延長部分を覆っている半導体光活
性層部分に上記延長部分の整列方向に沿ってエネルギビ
ームを照射し照射部分の半導体光活性層部分を除去して
、上記第１電極膜の延壱部分の少なくとも一部分ｔ−露
出せしめ、次いで当該露出した第１電極膜の延長部分に
、隣接した発電領域の半導体光活性層上に被着された第
２電極膜の延長部分を結合して隣接した発電領域を電気
的に直列接続したことを特徴とする。B.) Means for Solving the Problems In order to solve the above problems, the manufacturing method of the present invention has an insulating surface of a substrate, in which each of a plurality of power generation regions is provided with an extension extending from the power generation region toward the same periphery of the substrate. After dividing and arranging a first electrode film having a plurality of portions, and providing a semiconductor photoactive layer on almost the entire insulating surface of the substrate, including the first electrode film and its extended portion, At least a portion of the extended portion of the first electrode film t is irradiated with an energy beam to the semiconductor photoactive layer portion covering the extended portion along the alignment direction of the extended portion, and the semiconductor photoactive layer portion in the irradiated portion is removed. - exposing and then bonding the exposed extension of the first electrode film with an extension of a second electrode film deposited on the semiconductor photoactive layer of the adjacent power generation region to electrically connect the adjacent power generation region; It is characterized by being connected in series.
（ホ）作 用
上述の如く、基板の絶縁表面のほぼ全面に半導体光活性
層を設けた後、第１電極膜の延長部分を覆っている半導
体光活性層部分に、上記延長部分の整列方向例沿ってエ
ネルギビームを照射することによって、照射部分の半導
体光活性層部分を除去し得、直列接続のための第１電極
膜の延長部分の少なくとも一部分が露出せしめられる。(E) Function As described above, after providing the semiconductor photoactive layer on almost the entire insulating surface of the substrate, the semiconductor photoactive layer covering the extended portion of the first electrode film is coated in the alignment direction of the extended portion. By irradiating the semiconductor photoactive layer in accordance with the example with the energy beam, the irradiated portion of the semiconductor photoactive layer can be removed, exposing at least a portion of the extension of the first electrode film for series connection.
（へ）実施例
第１図乃至第４図は本発明製造方法を説［」１するため
のものであって、先ず第１図の工程では、ガラス、セラ
ミック、高分子フィルム等の絶縁材料からなゐ・長方形
、伏の基板（ｌの一方の主面（ｌａ）にその主面（１ａ
）の長辺方向に整列して複数の発電頭」或（２ａ）〜（
２ｄ）を区画すべき第１電極膜（３ａ）〜（３ｄ）が分
割配置さｎる。断る第１電ｔｉ［［（３ａ ）〜（３ｄ
）は、基１’ｆｆ１ｆ１！を受光面側とするとき、酸
化インジウム錫（ＩＴＯ）や酸化錫（Ｓｎ０２）Ｋ代表
される透光性導電酸化物（ＴＣＯ）の単層、或いは積層
構造であシ、基板（１）を背面側とするとき、アルミニ
ウム（ＡＪ）、チタン銀合金（ＴｉＡｇ）、銀（Ａｇ）
の金属からなる単層、或いはＩ：＃ 、ｊ−構造、更に
は所る一＆１寓層の表面を上記ＴＣＯで被覆した積層構
造を持つと共に、基板（１１の長辺の一方の周縁に向っ
て延出した延長部分（３ａｅ）〜（３ｄｅ）が設けられ
、右隣りに分割され九第１′道、■膜＜ ３ ｂ）〜（
３ｄ）のある第１電極１戻（３ａ）〜（３Ｃ）の延長部
分（３ａ ｅ ） 〜（３ｃ ｅ ）は、右隣りの第１
電啄膜（３ｂ）〜（３ｄ〕に向って屈曲したＬ字状にバ
ターニングされている。(f) Example Figures 1 to 4 are for explaining the manufacturing method of the present invention. First, in the process shown in Figure 1, insulating materials such as glass, ceramics, polymer films, etc. - Rectangular, face-down substrate (1 main surface (1a) on one main surface (1a) of
) A plurality of power generation heads arranged in the long side direction'' or (2a) ~ (
The first electrode films (3a) to (3d) that are to partition the area 2d) are arranged in a divided manner. 1st electricity ti [[(3a)~(3d
) is the base 1'ff1f1! When the light-receiving surface side is the substrate (1), the substrate (1) should be a single layer or a multilayer structure of a transparent conductive oxide (TCO) such as indium tin oxide (ITO) or tin oxide (Sn02)K. When used as a side, aluminum (AJ), titanium silver alloy (TiAg), silver (Ag)
It has a single layer made of a metal, or an I:#, j-structure, or a laminated structure in which the surface of a certain 1 & 1 layer is coated with the above TCO. Extension parts (3ae) to (3de) extending from
The extended portions (3a e ) to (3c e ) of the first electrode 1 return (3a) to (3C) with 3d) are the first electrodes on the right.
It is patterned into an L-shape bent toward the electric membranes (3b) to (3d).
第２図の工程では、上記第１電極膜（３ａ）〜（３ｄ〕
及びその延長部分（３ａｅ） 〜（３ｄｅ）を含んで上
記基板（Ｉ）の絶縁表面のほぼ全面にＳｉＨ４、ＳｉＦ
４等のシリコン化合物ガスを主原料ガスとするプラズマ
ＣＶＤ法或いは光ＣＶＤ法ニヨリ、アモルファスシリコ
ン、アモルファスシリコンカーバイド、アモルファスシ
リコンケルマニウム、微結晶シリコン等を適宜各層に配
置したＰｉｎ接合型、Ｐｎ接合型、Ｐｉ接合型、戎いけ
それらのタンデム構造の半導体光活性層（４）が形成さ
れる。In the process shown in FIG. 2, the first electrode films (3a) to (3d)
and its extended portions (3ae) to (3de), almost the entire insulating surface of the substrate (I) is coated with SiH4, SiF.
Amorphous silicon, amorphous silicon carbide, amorphous silicon kermanium, microcrystalline silicon, etc. are appropriately arranged in each layer to form a pin junction type or a pn junction type. A semiconductor photoactive layer (4) having a tandem structure of , Pi junction type, and cylindrical structure is formed.
第３図の工程では、レーザビームやＷ子ビームの如きエ
ネルギビームを用いて半導体光活性層（４）により覆わ
れ、その下着に位置している第１電極膜（３ａ）〜（３
ｄ）の延長部分（３ａｅ）〜（３ｄ、 ｅ ）の少なく
とも一部分を、特に本実施例にあっては露出長を大きく
するためＫＬ字状の底辺を露出せしめる。使用されるエ
ネルギビーム源は波長１．０６μｍのレーザビームを発
するＱスイッチ付Ｎｄ ： ＹＡＧレーザが適当であり
、上記延長部分（３ａｅ）〜（３ｄｅ）の整列方向に沿
ってパルス繰り返し周波＆１〜１０ＫＨｚ、パワー密度
２×１０７Ｗ／ｃｍ２、走査速度１０〜１００ｍｍ／ｓ
ｅｃの条件でパルス的に照射される。祈るレーザビーム
の１回の走査による照射によって、幅１００〜２００μ
ｍの半導体光活性層部分（４ｆが除去される。In the process shown in FIG. 3, an energy beam such as a laser beam or a W beam is used to form the first electrode films (3a) to (3) covered with the semiconductor photoactive layer (4) and located under the semiconductor photoactive layer (4).
At least a portion of the extended portions (3ae) to (3d, e) of d) is exposed, especially in this embodiment, the bottom of the KL shape is exposed in order to increase the exposed length. The energy beam source used is suitably a Q-switched Nd:YAG laser that emits a laser beam with a wavelength of 1.06 μm, and pulse repetition frequency &1 to 10 KHz along the alignment direction of the extension parts (3ae) to (3de). , power density 2 x 107 W/cm2, scanning speed 10-100 mm/s
It is irradiated in pulses under ec conditions. Width 100~200μ by irradiation with one scanning of laser beam
The semiconductor photoactive layer portion of m (4f is removed).
従って、要求される除去幅に応じて走査回数や、エネル
ギ密度が決定される。Therefore, the number of scans and energy density are determined depending on the required removal width.
尚、祈るレーザビームの照射による半導体光活性層の除
去自体は、例えば特開５ＦＡ５７−１２５６８号公報等
に開示された如く既に知られているが、除去される半導
体光活性層は複数の発電領域が互いに隣り合う隣接間隔
部分であり、本実施例の如く４つの発電領域（２ａ）〜
（２ｄ）を持つ光起電力装置にあっては各々の隣接間隔
部分について最低３回レーザビームを照射しなければな
らないのに対し、露出すべき延長部分（３ａｅ）〜（３
ｄｅ）を一方向に整列配置することによって、最低１回
のレーザビームの照射で良い。Note that the removal of the semiconductor photoactive layer by irradiation with a laser beam is already known, for example, as disclosed in Japanese Patent Laid-Open No. 5FA57-12568. are the adjacent interval portions adjacent to each other, and as in this embodiment, there are four power generation regions (2a) to
For photovoltaic devices with (2d), each adjacent spaced part must be irradiated with the laser beam at least three times, whereas the extended parts to be exposed (3ae) to (3
By aligning and arranging de) in one direction, laser beam irradiation may be performed at least once.
第４図の最終工程では、各発電＠域（２ａ）〜（２ｄ）
の第１電極膜（３ａ）〜（３ｄ）と隣接間隔部分が除去
されることなく連続した半導体光活性層４）を挾んでこ
の面を受光面とするとき上記ＴＣＯからなり、基板ｔＢ
１受光面とするとき上記ＡＪ、ＴｉＡｇ等の金属からな
る第２電極膜（５ａ）〜（５ｄ）が対向配置されると共
に、該第２虫極膜（５ａ）〜（５ｄ）の内、左隣に発電
＠域（２ａ）〜（２ｃ）が存在するもの（５ｂ）〜（５
ｄ）は上記第３図のレーザビームの照射により露出した
第１電極１漠（３ａ）〜（３Ｃ）の延長部分（３ａｅ）
〜（３ｃｅ）と結合すべく、基板（１）の畏辺の一方の
周縁に向って延出し逆り字状に屈曲した延長部分（ｓｂ
ｅ）〜（５ｄｅ）を持つ０所る第１′４ｉ板（３ａ）
〜（３ｃ）のＬ字状延長部分（３ａｅ） 〜（３ｃｅ）
の底辺と、第２電極膜（５ｂ）〜（５ｄ〕の逆り字状延
長部分（５ｂＣ）〜（５ｄｅ）の底辺との結合によって
、４つの発電領域（２ａ）〜（２ｄ）は・な気的に直列
接ｍａれ、それら発゛市頭域（２ａ ） 〜（２ｄ ）
の１（゛ｆ列出力は右端の第２電礒膜（５ａ）の蛎長部
分（５ａｅ）と、左端の第１電極膜〔３ｄ〕の延長部分
（３ｄｅ）から導出される。In the final process of Figure 4, each power generation @ area (2a) to (2d)
When the first electrode films (3a) to (3d) and the semiconductor photoactive layer 4) which is continuous without being removed and this surface is used as a light-receiving surface, the substrate tB is made of the above TCO.
When one light-receiving surface is used, the second electrode films (5a) to (5d) made of metals such as AJ and TiAg are arranged facing each other, and of the second polar films (5a) to (5d), the left Those where power generation@areas (2a) to (2c) exist next to each other (5b) to (5
d) is an extended portion (3ae) of the first electrode 1 (3a) to (3C) exposed by the laser beam irradiation in FIG. 3 above.
~(3ce), an extension part (sb
e) 0th 1'4i plate (3a) with ~(5de)
~(3c) L-shaped extension (3ae) ~(3ce)
The four power generation regions (2a) to (2d) are connected to the bottoms of the inverted letter-shaped extensions (5bC) to (5de) of the second electrode films (5b) to (5d). The market area (2a) ~ (2d)
1(゛f column output is derived from the cone length portion (5ae) of the second electrode film (5a) at the right end and the extended portion (3de) of the first electrode film [3d] at the left end.
尚、第１’ｊＰｊｆｔｌｌａ（３ａ ）〜（３ｃ ）
（！：２ＦＧ２電極膜（５ｂ）〜（５ｄ）との直列接続
は、Ｌ字状或いは逆り字状の延長部分（３ａｅ）〜（３
ｃｅ）戎いは（５ｂｅ）〜（５ｄｅ）の底辺同士を結合
することによって、半導体光活性Ｍ（４）の除去幅が狭
くとも第１電極膜（３ａ）〜（３ｃ）の延長部分（３ａ
ｅ）〜（３ｃｅ）の露出長を大きくすることができるの
で、結合面積の減少による電力損失を可及的に抑圧する
ことができる。In addition, the 1st'jPjftlla (3a) to (3c)
(!: The series connection with the 2FG2 electrode films (5b) to (5d) is the L-shaped or inverted-shaped extension part (3ae) to (3
ce) Alternatively, by bonding the bases of (5be) to (5de), even if the removal width of the semiconductor photoactive M(4) is narrow, the extended portions (3a) of the first electrode films (3a) to (3c) can be removed.
Since the exposed lengths of e) to (3ce) can be increased, power loss due to a reduction in the coupling area can be suppressed as much as possible.
（ト）発明の効果
本発明製造方法は以上の説明から明らかな如く、基板の
同一周縁に向うて第１′疏極膜から延出した延長部分を
覆う半導体光活性層部分は、その延長部分の整列方向に
沿ってエネルギビームが照射されることによって、従来
の如くマスクを使用したり、フォトリソグラフィ法を使
用することなく除去されるので、煩雑な工程を経ずに直
列接続のための第１電庵摸のｌ／ｆＥ長部分の少なくと
も一部分を露出せしめることができる。(G) Effects of the Invention As is clear from the above explanation, the semiconductor photoactive layer portion covering the extended portion extending from the first polar film toward the same periphery of the substrate is By irradiating the energy beam along the alignment direction of the 3D images, they can be removed without using conventional masks or photolithography. At least a portion of the l/fE long portion of the 1denan pattern can be exposed.
第１図乃至第４図は不発明製造方法と工程別に示す平面
図であって、（１）は基板、（２ａ）〜（２ｄ）は発電
頭載、（３ａ）〜（３ｄ）は第１電極膜、（３ａｅ）〜
（３ｄｅ）（ｒｉ第１電極膜（３ａ〕〜（３ｄ）の延長
部分、（４）は半導体光活性・密、（５ａ） 〜（５ｄ
）は第２電極膜、（５ａｅ）〜（５ｄａ）け第２電ｎＮ
、（５ａ ） 〜（５ｄ ）の延長部分。
出頃入 玉洋電機株式会社1 to 4 are plan views showing the uninvented manufacturing method and each step, in which (1) is the substrate, (2a) to (2d) are the power generation overhead, and (3a) to (3d) are the first Electrode film, (3ae) ~
(3de) (ri extended portion of first electrode film (3a) to (3d), (4) is semiconductor photoactive/dense, (5a) to (5d)
) is the second electrode film, (5ae) to (5da) is the second electrode nN
, (5a) to (5d). Coming soon Tamayo Electric Co., Ltd.
Claims (1)
域から基板の同一周縁に向って延出した延長部分を有す
る第１電極膜を分割配置し、この第１電極膜及びその延
長部分を含んで上記基板の絶縁表面のほぼ全面に半導体
光活性層を設けた後、上記第１電極膜の延長部分を覆っ
ている半導体光活性層部分に上記延長部分の整列方向に
沿ってエネルギビームを照射し照射部分の半導体光活性
層部分を除去して、上記第１電極膜の延長部分の少なく
とも一部分を露出せしめ、次いで当該露出した第１電極
膜の延長部分に、隣接した発電領域の半導体光活性層上
に被着された第２電極膜の延長部分を結合して隣接した
発電領域を電気的に直列接続したことを特徴とする光起
電力装置の製造方法。(1) A first electrode film having an extension portion extending from the power generation region toward the same periphery of the substrate is divided and arranged on the insulating surface of the substrate for each of a plurality of power generation regions, and the first electrode film and its extension are arranged separately on the insulating surface of the substrate. After providing a semiconductor photoactive layer on almost the entire insulating surface of the substrate including the first electrode film, energy is applied to the semiconductor photoactive layer portion covering the extended portion of the first electrode film along the alignment direction of the extended portion. A beam is irradiated to remove the irradiated portion of the semiconductor photoactive layer to expose at least a portion of the extended portion of the first electrode film, and then the exposed extended portion of the first electrode film is exposed to the adjacent power generation region. 1. A method of manufacturing a photovoltaic device, comprising: connecting extended portions of a second electrode film deposited on a semiconductor photoactive layer to electrically connect adjacent power generation regions in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60217656A JPS6276786A (en) | 1985-09-30 | 1985-09-30 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60217656A JPS6276786A (en) | 1985-09-30 | 1985-09-30 | Manufacture of photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6276786A true JPS6276786A (en) | 1987-04-08 |
| JPH0551190B2 JPH0551190B2 (en) | 1993-07-30 |
Family
ID=16707664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60217656A Granted JPS6276786A (en) | 1985-09-30 | 1985-09-30 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6276786A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62232175A (en) * | 1986-03-31 | 1987-10-12 | Kyocera Corp | Manufacture of photovoltaic device |
| JPS62232176A (en) * | 1986-03-31 | 1987-10-12 | Kyocera Corp | Photovoltaic device |
| JPS62259479A (en) * | 1986-03-31 | 1987-11-11 | Kyocera Corp | Photovoltaic device |
| JPH0193174A (en) * | 1987-10-05 | 1989-04-12 | Kanegafuchi Chem Ind Co Ltd | Manufacture of semiconductor device |
| US5041391A (en) * | 1988-11-18 | 1991-08-20 | Sanyo Electric Co., Ltd. | Method of manufacturing a photovoltaic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55107276A (en) * | 1979-02-09 | 1980-08-16 | Sanyo Electric Co Ltd | Photoelectromotive force device |
| JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
| JPS5976480A (en) * | 1982-10-26 | 1984-05-01 | Fuji Electric Co Ltd | Amorphous silicon solar battery |
-
1985
- 1985-09-30 JP JP60217656A patent/JPS6276786A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55107276A (en) * | 1979-02-09 | 1980-08-16 | Sanyo Electric Co Ltd | Photoelectromotive force device |
| JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
| JPS5976480A (en) * | 1982-10-26 | 1984-05-01 | Fuji Electric Co Ltd | Amorphous silicon solar battery |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62232175A (en) * | 1986-03-31 | 1987-10-12 | Kyocera Corp | Manufacture of photovoltaic device |
| JPS62232176A (en) * | 1986-03-31 | 1987-10-12 | Kyocera Corp | Photovoltaic device |
| JPS62259479A (en) * | 1986-03-31 | 1987-11-11 | Kyocera Corp | Photovoltaic device |
| JPH0193174A (en) * | 1987-10-05 | 1989-04-12 | Kanegafuchi Chem Ind Co Ltd | Manufacture of semiconductor device |
| US5041391A (en) * | 1988-11-18 | 1991-08-20 | Sanyo Electric Co., Ltd. | Method of manufacturing a photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0551190B2 (en) | 1993-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |