JPS62232175A - Manufacture of photovoltaic device - Google Patents

Abstract

PURPOSE:To stabilize the quality of a film and to improve the quality of appearance, by forming a connecting hole part, which penetrates an amorphous semiconductor layer by the projection of laser light along the aligning direction of a plurality of first electrodes, and electrically connecting second electrodes to the neighboring first electrodes through the connecting hole part when a plurality of the second electrodes are formed on the amorphous semiconductor layer. CONSTITUTION:On a substrate 1, first electrodes 2a-2c and extended parts 21a-21c for connection are simultaneously formed. An amorphous semiconductor layer 3 is deposited so as to cover the electrodes and the extended parts completely. A connecting hole part 5, which is formed by the projection of laser light, penetrates the amorphous semiconductor layer 3. A plurality of second electrodes 4a-4c corresponding to the first electrodes 2a-2c are formed on the amorphous semiconductor layer 3. Extended parts 4la-41c for connection are electrically connected to the extended parts 21a-21b of the first electrodes for connection.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a photovoltaic device having an amorphous semiconductor layer, such as a solar cell or a photo sensor.

[Conventional technology]

A plan view of a conventional photovoltaic device is shown in FIG. 3(g).

A plurality of first electrodes 2g to 21 are formed on the insulating substrate 1. A continuous amorphous semiconductor layer 3 is deposited on the plurality of first electrodes 2g to 21, and further the first electrode 2g
21, a plurality of second electrodes 4g to 41 are formed on the amorphous semiconductor N3.

As a result, a plurality of power generation areas g to i are formed on the insulating substrate l.

When forming the first electrodes 2g to 21, connection extensions 21g to 21i of the first electrodes extending outside the amorphous semiconductor layer 3 are formed by mask operation or etching. Also,
When forming the second electrodes 4g to 41, by operating a mask, a power generation area g extending outside the amorphous semiconductor layer 3 and adjacent to the
-h second electrode connection extensions 41h to 41i are formed to overlap and connect with the first electrode connection extensions 21g to 21h. In addition, the extension part 41 for connecting the second electrode of the power generation area g
g is formed as it is outside the amorphous semiconductor layer 3, and an output terminal portion 61 for taking out a lead wire is formed on the connection extension portion 21i of the first electric power generation area i.

Thus, the connection extensions 21g to 21h of the first electrode and the connection extensions 41h to 41i of the second electrode are in the power generation area g.
``i is electrically connected to each other so as to be in a series relationship,
Output is obtained between the connection extension part 41g of the second electrode in the power generation area g and the output terminal part 61 for taking out the lead wire. (
(Japanese Patent Publication No. 58-21827) Next, a method for manufacturing the above-mentioned photovoltaic device will be explained based on plan views of each step in FIGS. 3(a) to 3(g).

The insulating substrate 1 is cleaned and dried (FIG. 3(a)), and a first electrode forming mask 22 is placed over the substrate 1 (FIG. 3(b)). The shape of the mask 22 is such that the first electricity Fi2g~21 of the power generation area g-i and its connection extension part 21g~2
1i has a window formed therein.

Through the mask 22, a transparent conductive film such as SnO□, In, 03, etc., which will become the first electric scrapers 2g to 21 and their connection extensions 21g to 21i, is deposited using a spray method, a plasma CVD method, or a sputtering method. be done. Thereafter, the mask 22 is removed. As a result, the first electrodes 2g to 21 and their connection extensions 21g to 2 arranged on the substrate l, respectively.
1i is formed (FIG. 3(C)).

Next, a mask 32 for forming an amorphous semiconductor layer is attached to the substrate 1 (FIG. 3(d)). Here, the forming mask 32
1 is continuously connected to the poles 2g to 21, and the connecting extensions 21g to 21i are hidden.

It is put into a plasma CVD apparatus, and an amorphous semiconductor layer 3 is deposited by glow discharge decomposition. The amorphous semiconductor layer 3 is P-1-
For example, PJli is made of silane (Si
H4), hydrogen (H), diborane (BIH), one layer is a mixture of silane and hydrogen, NNi is a mixture of silane + Ht + phosphine (Plh), and the gas pressure is 1.2 Torr. The film is deposited through the mask 32 by applying a high frequency voltage of .56 MIIz.

The mask 32 is removed, and a continuous amorphous semiconductor layer 3 is formed on the first electrodes 2g to 21 (FIG. 3(e)).
.

Further, a second electrode forming mask 42 having a window of a predetermined shape is provided on the amorphous semiconductor layer 3 so that the second electrodes 4g to 41, their connection extensions 41g to 411, and an output terminal 61 are formed. (Fig. 3(f)).

In this state, the second electrodes 14g to 41 and their connecting extension parts 41g to
41i, a metal film that will become the output terminal portion 61 is deposited. The metals used are aluminum (AI), nickel (Ni), chromium (Cr), titanium (Ti), etc.
It is deposited in a film thickness of 0.4 to 1 μm.

Then, the mask 42 is removed, and the second electrode 4g having a predetermined shape is
41, its connection extensions 41g to 41i, and an output terminal 61 are formed. (Figure 3(g)).

[Problems with conventional technology]

However, in conventional photovoltaic devices, 15 to 20χ of the total surface area of the substrate l is a connection part that does not contribute to power generation at all.
Effective light-receiving area relative to the area of the substrate l (amorphous semiconductor layer 3
The deposited area G) is extremely degraded.

This is because the mask 32 is attached so that the amorphous semiconductor layer 3 does not adhere to the connection portion C, but the amorphous semiconductor T43 may enter the gap between the mask 32 and the substrate 1. This is due to the fact that the overlapping portions of the electric scraper extensions 21g to 21h and the second electrode extensions 41h to 41 are enlarged to improve the reliability of the connection.

Further, the mask 32 causes plasma interference due to glow discharge, which causes the film quality of the amorphous semiconductor layer 3 to become unstable, resulting in a decrease in output characteristics and a poor appearance.

[Object of the present invention]

The present invention was devised in view of the above-mentioned problems, and its purpose is to increase the effective light-receiving area with respect to the substrate, improve the film quality of the amorphous semiconductor layer, and obtain high output characteristics. An object of the present invention is to provide a method for manufacturing a photovoltaic device.

[Specific means to achieve the purpose]

The specific means taken by the present invention to achieve the above object includes an amorphous semiconductor layer and a first layer sandwiching the amorphous semiconductor layer.
In a method for manufacturing a photovoltaic device having a plurality of power generation areas consisting of a second electrode and an array of the power generation areas formed on an insulating substrate, a plurality of first electrodes are formed on the insulating substrate,
After depositing an amorphous semiconductor layer to cover the plurality of first electrodes, connection openings penetrating the amorphous semiconductor layer are arranged on a straight line along the arrangement direction of the first electrodes. Then, a plurality of second electric wires are formed on the amorphous semiconductor layer so that the electromotive force of each power generation area is output in series, and the first electric wires of adjacent power generation areas are connected. electrical connection through the opening.

〔Example〕

Hereinafter, a method for manufacturing a photovoltaic device according to the present invention will be explained based on the drawings.

FIG. 1(g) is a plan view of a photovoltaic device manufactured by the method for manufacturing a photovoltaic device of the present invention.

First electrodes 28 to 2c are arranged and formed on the substrate 1.

At this time, connecting extension parts 21a to 21c extending to the side edges of each power generation area a to c are simultaneously formed on each of the electrodes 28 to 2c.

The amorphous semiconductor layer 3 is deposited to completely cover the first electrodes f42a-2c and their connection extensions 21a-21c.

5 is the connection extension part 21a of the first electrical excavation arranged on the board 1.
This is a connection opening formed in a part of the amorphous semiconductor layer 3 on 21c by laser irradiation along the arrangement direction of power generation areas a-c. The amorphous semiconductor layer 3 is formed by the connection opening 5.
extends through the connection extension portions 21a to 21a of the first electrodes 28 to 2c.
21c and the substrate 1 are exposed.

The width of the connection opening 5 is determined by the output of the laser.
A minimum thickness of 20 μm is sufficient. In addition, the connection opening 5
Depending on the Q-switch frequency of the laser oscillation and the laser scanning speed with respect to the substrate 1, small holes with a diameter of at least 20 μm may be formed intermittently, or a single small hole may be formed.

Furthermore, a plurality of second electrodes 4a to 4c corresponding to the first electrodes m2a to 2C are formed on the amorphous semiconductor layer 3.

As a result, a plurality of power generation areas a-C are formed on the substrate 1.

When forming the second 14i4a to 4c, the connection extension does not connect to the first ri poles 2a to 2c of the same power generation area a to C, but extends to the adjacent power generation area a=b first electrodes 28 to 2b. portions 41b to 41c are formed, and the connecting extension portion 4
1b to 41c are electrically connected to the connection extensions 21a to 21b of the first electrodes of the adjacent power generation areas a-b through the connection openings 5.

Thus, each generating area a'wc electrically connected in series
The output of the photovoltaic device having a
It is obtained from between the output terminal portion 6c formed on the laser connection opening 5 where the extending portion 21c of the electrode 2c is exposed.

Next, the method for manufacturing the photovoltaic device of the present invention is shown in FIG. 1(a).
Description will be made based on plan views of each step of -(g).

A substrate 1 whose surface is made of glass, ceramic, or stainless steel and has been subjected to insulation treatment is cleaned and dried (FIG. 1(a)), and a first electrode forming mask 22 is placed over the substrate 1 (FIG. 1(b)).

The shape of the mask 22 corresponds to the first electrodes 2a to 2 in the power generation areas a-C.
C and its connection extensions 21a to 21C are formed therein.

In this state, using a spray method, plasma CVD method, sputtering method, etc., a transparent conductive film, for example, tin oxide (Sn
O□) etc. are deposited. Thereafter, the mask 22 is removed, and the first electrodes 2a to 2C and their connecting extensions 21a to 21c are arranged and formed on the substrate 1 (see FIG. 1C).
).

Plasma C
The substrate 1 is placed in a VD method device and decomposed by glow discharge.
An amorphous semiconductor layer 3 is deposited on the entire surface (Fig. 1(d)).
.

The amorphous semiconductor 153 is amorphous silicon with a P-1-N junction, and the P layer is formed using silane, hydrogen, and P.
Using a mixed gas containing diborane as a mold doping agent, the substrate temperature is 150-200°C and the gas pressure is 1.0-1.3T.
orr and apply a high frequency voltage of 13.56 MIIz. IJI contains silane and hydrogen, and N layer contains silane, hydrogen and N.
Each is deposited using a gas mixture to which phosphine is added as a mold dopant. The thickness of the amorphous semiconductor layer 3 is 0.5~
It is 1 μm.

Next, a portion of the amorphous semiconductor layer 3 on the connection extensions 21a to 21c of the first electrodes 28 to 2c arranged on the substrate 1 is irradiated with a laser along the arrangement direction to form a straight connection opening 5. is formed (Fig. 1(e)). This connection opening 5 penetrates the amorphous semiconductor layer 3 and extends through the connection extension 2 of the first electrode.
1a to 21c and the substrate 1 are exposed. Specifically, the connection opening 5 is formed by irradiating Nd-YAG laser light.

For example, if the loss inch frequency of laser oscillation is 2KHz,
Laser scanning speed for q plate l is 100mm/se
Let it be c. In the figure, the connection opening 5 is a straight groove.
However, by lowering the loss inch frequency and increasing the laser scanning speed for the substrate l,
It is also possible to form small holes of 0 μI intermittently.
Furthermore, it is also possible to variously set the laser output, loss inch frequency, and laser scanning speed in order to form a predetermined opening without damaging the first electrodes 28 to 2c.

Further, a second electrode forming mask 42 having a window of a predetermined shape in which the second electrodes 28 to 2c, their connecting extensions 21a to 21c, and an output terminal portion 6c are formed is mounted on the amorphous semiconductor layer 3. (Figure 1(f)).

In this state, the second TL poles 4a to 4c and their connecting extension portions 41a are formed by sputtering, resistance heating, or electron beam.
41c, a metal film that will become the output terminal portion 6c is deposited. The metal is aluminum, nickel, chromium, titanium, etc., and the thickness thereof is 0.4 to 1 μm.

Even if the metal film is thinner than the amorphous semiconductor N3,
If the substrate 1 is rotated during deposition of the metal film, connection failures at the edge portions of the connection openings 5 will not occur.

Then, the mask 42 is removed, and the second electrode 48 having a predetermined shape is removed.
4c, their connection extensions 41a to 41c, and an output terminal part 6c are formed, and the connection extension 21a of the first RF pole of the power generation area a and the power generation area The second electrode connection extension 41b is electrically connected to the first electrode connection extension 21b of the power generation area C and the second electrode connection extension 41c of the power generation area C, respectively. a-c are connected in series.

According to the invention, the portion where the connection is substantially made is from 20 to
Since the connection opening 5 has an opening width of 200 μm, the widths of the first electrode connection extensions 21a to 2b and the 21st electrode connection extensions 41b to 41c are slightly wider than the connection opening 5. The dimensions can be large, and the connecting portion of the photovoltaic device has an extremely small area.

FIGS. 2(a) and 2(b) are plan views showing the main steps of another embodiment of the method for manufacturing a photovoltaic device of the present invention.

Rectangular first electrodes 2d to 2f are arranged on the substrate 1. The first electrodes 2d to 2f do not have connection extensions and are connected to the substrate 1.
It is formed so that it is located almost on the entire surface of the area. This first electrode 2
An amorphous semiconductor layer 3 is formed continuously on d to 2f. The amorphous semiconductor layer 3 has a first TL pole 2d~
Intermittent linear connection openings 5d in the arrangement direction of 2f.
5f is formed (FIG. 2(a)).

Preferably, the connection openings 5d to 5'' are formed at the ends of the first electrodes 2d to 2f without limit to increase the effective light receiving area.

Then, the second electric cables ff14d to 4f and the connection extension part 41
e to 41f, and the output terminal portion 6f are formed (Fig. 2(b)
)) Specifically, as described above, the second electrode is formed into a predetermined shape by operating the mask for forming the second electrode, and the connection extension 41f of the second electrode 4f of the power generation area is connected to the power generation area through the connection opening 5e. connected to the first electrode 2e of power generation section J-1ie
The second connection extension 41e of the pole 4e connects to the connection opening 5.
d to the 111th pole 2d of the power generation zone d, so that the power generation zones f and d are electrically connected in series.

Thus, the output of the photovoltaic device described above is connected to the output terminal portion 6f through the connection extension 41d of the second electrode 4d of the power generation area d and the connection opening 5f on the first electrode 2f of the power generation area f. It can be obtained from between.

In the method for manufacturing the photovoltaic device described above, since the connection openings are provided intermittently, the first electrode and the second electrode in the same power generation area are connected intermittently. i! The portion contributing to power generation where the poles face each other can be made extremely large, and the short-circuit current value is significantly improved compared to conventional devices manufactured using substrates of the same size.

In addition, in the above-mentioned embodiment, a transparent conductive film is provided on the first electrode,
Although a metal film is used for each of the second electrodes, a metal film may be used for the first electrode, and a transparent conductive film may be used for the second electrode. Further, although the shape of each of the first and second electrodes is determined by a mask operation, the first and second electrodes having a predetermined shape may be formed by a resist film and an etching process.

〔effect〕

As described above, the present invention includes forming a plurality of first electrodes in an array on an insulating substrate, depositing an amorphous semiconductor layer that completely covers the plurality of first electrodes, and forming a plurality of first electrodes on an insulating substrate. The first? When forming a connection opening that penetrates the amorphous semiconductor layer by laser irradiation along the arrangement direction of the ilt electrodes, and further forming a plurality of second electrodes on the amorphous semiconductor layer, the connection opening Through
A method of manufacturing a photovoltaic device in which an electrical connection is made to an adjacent first electrode, wherein an amorphous semiconductor layer is deposited without a mask, so that interference caused by the mask and plasma on the amorphous semiconductor layer is avoided. An amorphous semiconductor layer with no oxidation, stable film quality, and extremely excellent appearance quality can be obtained, and series connection of each power generation area can be achieved with a minimum diameter of connection opening.

Further, since the connection is made through the connection opening having a width or diameter of 20 to 200 μm, and the width of the connection extension of the first and/or second electric scratcher can be minimized, the effective light-receiving area with respect to the substrate is improved. This increases the number of photovoltaic devices that can be obtained from the manufacturing substrate, so less raw material gas, metal, etc. are used per device, and the unit price becomes extremely low.

[Brief explanation of drawings]

1(a) to 1(g) are plan views showing each step of the method for manufacturing a photovoltaic device of the present invention, and in particular, FIG.
g) is a plan view of a photovoltaic device manufactured by the method for manufacturing a photovoltaic device of the present invention. FIGS. 2(a) and 2(b) are plan views showing only the main steps of another embodiment of the method for manufacturing a photovoltaic device according to the present invention, and in particular, FIG. FIG. 2 is a plan view of a photovoltaic device manufactured by the method. FIG. 3(a) to FIG. 3(g) are plan views showing each step of the conventional method for manufacturing a photovoltaic device, especially FIG. 3(g).
1 is a plan view of a photovoltaic device manufactured by a conventional method for manufacturing a photovoltaic device. 1...Substrates 2a to 21...First electrode 3...Amorphous semiconductor layers 4a to 41...Second electric scraping

Claims (1)

[Claims] An amorphous semiconductor layer, a first and a second layer sandwiching the amorphous semiconductor layer.
A method for manufacturing a photovoltaic device having a plurality of power generation areas consisting of electrodes, and in which the power generation areas are arranged and formed on an insulating substrate, comprising: forming a plurality of first electrodes on the insulating substrate; After depositing an amorphous semiconductor layer to cover the first electrodes,
Connection openings penetrating the amorphous semiconductor layer are formed so as to be arranged on a straight line along the arrangement direction of the first electrodes, and then an amorphous semiconductor layer is formed so that the electromotive force of each power generation area is output in series. A method for manufacturing a photovoltaic device, characterized in that a plurality of second electrodes are formed on a semiconductor layer, and first electrodes of adjacent power generation areas are electrically connected through the connection opening.