JPS627536B2 - - Google Patents
Info
- Publication number
- JPS627536B2 JPS627536B2 JP11731180A JP11731180A JPS627536B2 JP S627536 B2 JPS627536 B2 JP S627536B2 JP 11731180 A JP11731180 A JP 11731180A JP 11731180 A JP11731180 A JP 11731180A JP S627536 B2 JPS627536 B2 JP S627536B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- material layer
- photosensitive material
- photomask
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11731180A JPS5741640A (en) | 1980-08-26 | 1980-08-26 | Photomask and its production, and pattern transfer method using said photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11731180A JPS5741640A (en) | 1980-08-26 | 1980-08-26 | Photomask and its production, and pattern transfer method using said photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5741640A JPS5741640A (en) | 1982-03-08 |
| JPS627536B2 true JPS627536B2 (enExample) | 1987-02-18 |
Family
ID=14708603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11731180A Granted JPS5741640A (en) | 1980-08-26 | 1980-08-26 | Photomask and its production, and pattern transfer method using said photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5741640A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2589593A1 (fr) * | 1985-08-09 | 1987-05-07 | Pichot Michel | Masque de lithographie, procede de fabrication de ce masque et procede de fabrication d'un circuit integre a l'aide dudit masque |
| FR2606210B1 (fr) * | 1986-10-30 | 1989-04-07 | Devine Roderick | Procede de fabrication d'un masque de photolithogravure et masque obtenu |
-
1980
- 1980-08-26 JP JP11731180A patent/JPS5741640A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5741640A (en) | 1982-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5885735A (en) | Mask having a phase shifter and method of manufacturing same | |
| KR950008384B1 (ko) | 패턴의 형성방법 | |
| JPS6323657B2 (enExample) | ||
| KR100298609B1 (ko) | 위상쉬프트층을갖는포토마스크의제조방법 | |
| JPH06250376A (ja) | 位相シフトマスク及び位相シフトマスクの製造方法 | |
| JPS627536B2 (enExample) | ||
| KR100526527B1 (ko) | 포토마스크와 그를 이용한 마스크 패턴 형성 방법 | |
| JPH0446346A (ja) | 半導体装置の製造方法 | |
| WO1983003485A1 (en) | Electron beam-optical hybrid lithographic resist process | |
| JPH0448715A (ja) | 半導体装置の製造方法 | |
| JPH0225500B2 (enExample) | ||
| JPH01185632A (ja) | 転写用マスク、およびこの転写用マスクを使用した露光転写方法 | |
| KR960000184B1 (ko) | 자동 배치형 위상반전마스크 제조 방법 | |
| JPH0611827A (ja) | ホトマスクおよびその修正方法 | |
| GB1583459A (en) | Masks their manufacture and the manufacture of microminiature solid-state devices using such masks | |
| JP2583986B2 (ja) | レジストパターンの形成方法 | |
| JP3072917B2 (ja) | 位相シフト層を有するレクチルの製造方法 | |
| JPS6120329A (ja) | X線露光用マスク | |
| JPS588131B2 (ja) | 半導体装置の製造方法 | |
| JPS60231331A (ja) | リフトオフ・パタ−ンの形成方法 | |
| JPH06140297A (ja) | レジスト塗布方法 | |
| JPH01302350A (ja) | レジストパターン形成方法 | |
| KR100265353B1 (ko) | 이중감광막을 이용한 반도체소자의 금속패턴 형성방법 | |
| KR940007445B1 (ko) | 마스크(Mask)의 제조방법 | |
| JPS6289053A (ja) | フオトマスク |