JPS627268B2 - - Google Patents
Info
- Publication number
- JPS627268B2 JPS627268B2 JP6313179A JP6313179A JPS627268B2 JP S627268 B2 JPS627268 B2 JP S627268B2 JP 6313179 A JP6313179 A JP 6313179A JP 6313179 A JP6313179 A JP 6313179A JP S627268 B2 JPS627268 B2 JP S627268B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- etching
- gas plasma
- sio
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 29
- 238000001020 plasma etching Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 42
- 229910004298 SiO 2 Inorganic materials 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 150000002222 fluorine compounds Chemical class 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- -1 fluorine radicals Chemical class 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 206010057249 Phagocytosis Diseases 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000008782 phagocytosis Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6313179A JPS55154582A (en) | 1979-05-21 | 1979-05-21 | Gas plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6313179A JPS55154582A (en) | 1979-05-21 | 1979-05-21 | Gas plasma etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55154582A JPS55154582A (en) | 1980-12-02 |
| JPS627268B2 true JPS627268B2 (ko) | 1987-02-16 |
Family
ID=13220401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6313179A Granted JPS55154582A (en) | 1979-05-21 | 1979-05-21 | Gas plasma etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55154582A (ko) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100683A (ja) * | 1981-12-12 | 1983-06-15 | Nippon Telegr & Teleph Corp <Ntt> | プラズマエツチング方法 |
| JPS58209111A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | プラズマ発生装置 |
| US4451349A (en) * | 1983-04-20 | 1984-05-29 | International Business Machines Corporation | Electrode treatment for plasma patterning of polymers |
| JPS60201632A (ja) * | 1984-03-27 | 1985-10-12 | Anelva Corp | ドライエツチング装置 |
| JPH0740567B2 (ja) * | 1985-07-25 | 1995-05-01 | テキサス インスツルメンツ インコ−ポレイテツド | プラズマ処理の方法と装置 |
| JPH089787B2 (ja) * | 1987-07-24 | 1996-01-31 | 日本電信電話株式会社 | プラズマエツチング装置 |
| US6068784A (en) * | 1989-10-03 | 2000-05-30 | Applied Materials, Inc. | Process used in an RF coupled plasma reactor |
| JP2797667B2 (ja) * | 1990-07-13 | 1998-09-17 | 住友金属工業株式会社 | プラズマエッチング装置 |
| US6444137B1 (en) | 1990-07-31 | 2002-09-03 | Applied Materials, Inc. | Method for processing substrates using gaseous silicon scavenger |
| US6251792B1 (en) | 1990-07-31 | 2001-06-26 | Applied Materials, Inc. | Plasma etch processes |
| US5477975A (en) * | 1993-10-15 | 1995-12-26 | Applied Materials Inc | Plasma etch apparatus with heated scavenging surfaces |
| US6518195B1 (en) | 1991-06-27 | 2003-02-11 | Applied Materials, Inc. | Plasma reactor using inductive RF coupling, and processes |
| US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6036877A (en) | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6090303A (en) * | 1991-06-27 | 2000-07-18 | Applied Materials, Inc. | Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
| US6165311A (en) | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| US6063233A (en) | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
| US6238588B1 (en) | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
| US6514376B1 (en) | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6024826A (en) * | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US5888414A (en) * | 1991-06-27 | 1999-03-30 | Applied Materials, Inc. | Plasma reactor and processes using RF inductive coupling and scavenger temperature control |
| JP2997142B2 (ja) * | 1992-01-24 | 2000-01-11 | アプライド マテリアルズ インコーポレイテッド | 集積回路構造の選択性の高い酸化物エッチングプロセス |
| TW279240B (en) | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
| US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| US6036878A (en) | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
| US6132551A (en) * | 1997-09-20 | 2000-10-17 | Applied Materials, Inc. | Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil |
| US6589437B1 (en) | 1999-03-05 | 2003-07-08 | Applied Materials, Inc. | Active species control with time-modulated plasma |
| US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
-
1979
- 1979-05-21 JP JP6313179A patent/JPS55154582A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55154582A (en) | 1980-12-02 |
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