JPS6269562U - - Google Patents
Info
- Publication number
- JPS6269562U JPS6269562U JP16022485U JP16022485U JPS6269562U JP S6269562 U JPS6269562 U JP S6269562U JP 16022485 U JP16022485 U JP 16022485U JP 16022485 U JP16022485 U JP 16022485U JP S6269562 U JPS6269562 U JP S6269562U
- Authority
- JP
- Japan
- Prior art keywords
- information
- entry
- exit
- opening
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000012795 verification Methods 0.000 claims description 2
- 230000005856 abnormality Effects 0.000 claims 1
- 230000001960 triggered effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000013524 data verification Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Lock And Its Accessories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16022485U JPS6269562U (enrdf_load_stackoverflow) | 1985-10-19 | 1985-10-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16022485U JPS6269562U (enrdf_load_stackoverflow) | 1985-10-19 | 1985-10-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6269562U true JPS6269562U (enrdf_load_stackoverflow) | 1987-05-01 |
Family
ID=31085401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16022485U Pending JPS6269562U (enrdf_load_stackoverflow) | 1985-10-19 | 1985-10-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6269562U (enrdf_load_stackoverflow) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
US7301203B2 (en) | 2003-11-28 | 2007-11-27 | Fairchild Korea Semiconductor Ltd. | Superjunction semiconductor device |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
US7429523B2 (en) | 2001-10-17 | 2008-09-30 | Fairchild Semiconductor Corporation | Method of forming schottky diode with charge balance structure |
US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
US7534683B2 (en) | 2004-10-08 | 2009-05-19 | Fairchild Semiconductor Corporation | Method of making a MOS-gated transistor with reduced miller capacitance |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US7625793B2 (en) | 1999-12-20 | 2009-12-01 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8928077B2 (en) | 2007-09-21 | 2015-01-06 | Fairchild Semiconductor Corporation | Superjunction structures for power devices |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54145451A (en) * | 1978-05-06 | 1979-11-13 | Fujitsu Ltd | Data collector unit |
-
1985
- 1985-10-19 JP JP16022485U patent/JPS6269562U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54145451A (en) * | 1978-05-06 | 1979-11-13 | Fujitsu Ltd | Data collector unit |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7625793B2 (en) | 1999-12-20 | 2009-12-01 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
US9368587B2 (en) | 2001-01-30 | 2016-06-14 | Fairchild Semiconductor Corporation | Accumulation-mode field effect transistor with improved current capability |
US7429523B2 (en) | 2001-10-17 | 2008-09-30 | Fairchild Semiconductor Corporation | Method of forming schottky diode with charge balance structure |
US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
US7582519B2 (en) | 2002-11-05 | 2009-09-01 | Fairchild Semiconductor Corporation | Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction |
US8936985B2 (en) | 2003-05-20 | 2015-01-20 | Fairchild Semiconductor Corporation | Methods related to power semiconductor devices with thick bottom oxide layers |
US8889511B2 (en) | 2003-05-20 | 2014-11-18 | Fairchild Semiconductor Corporation | Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor |
US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7301203B2 (en) | 2003-11-28 | 2007-11-27 | Fairchild Korea Semiconductor Ltd. | Superjunction semiconductor device |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
US7534683B2 (en) | 2004-10-08 | 2009-05-19 | Fairchild Semiconductor Corporation | Method of making a MOS-gated transistor with reduced miller capacitance |
US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
US7473603B2 (en) | 2006-06-19 | 2009-01-06 | Fairchild Semiconductor Corporation | Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
US8928077B2 (en) | 2007-09-21 | 2015-01-06 | Fairchild Semiconductor Corporation | Superjunction structures for power devices |
US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
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