JPS6269562U - - Google Patents

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Publication number
JPS6269562U
JPS6269562U JP16022485U JP16022485U JPS6269562U JP S6269562 U JPS6269562 U JP S6269562U JP 16022485 U JP16022485 U JP 16022485U JP 16022485 U JP16022485 U JP 16022485U JP S6269562 U JPS6269562 U JP S6269562U
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JP
Japan
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information
entry
exit
opening
terminal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16022485U
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English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16022485U priority Critical patent/JPS6269562U/ja
Publication of JPS6269562U publication Critical patent/JPS6269562U/ja
Pending legal-status Critical Current

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  • Lock And Its Accessories (AREA)
JP16022485U 1985-10-19 1985-10-19 Pending JPS6269562U (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16022485U JPS6269562U (enrdf_load_stackoverflow) 1985-10-19 1985-10-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16022485U JPS6269562U (enrdf_load_stackoverflow) 1985-10-19 1985-10-19

Publications (1)

Publication Number Publication Date
JPS6269562U true JPS6269562U (enrdf_load_stackoverflow) 1987-05-01

Family

ID=31085401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16022485U Pending JPS6269562U (enrdf_load_stackoverflow) 1985-10-19 1985-10-19

Country Status (1)

Country Link
JP (1) JPS6269562U (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US7301203B2 (en) 2003-11-28 2007-11-27 Fairchild Korea Semiconductor Ltd. Superjunction semiconductor device
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7429523B2 (en) 2001-10-17 2008-09-30 Fairchild Semiconductor Corporation Method of forming schottky diode with charge balance structure
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7534683B2 (en) 2004-10-08 2009-05-19 Fairchild Semiconductor Corporation Method of making a MOS-gated transistor with reduced miller capacitance
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7625793B2 (en) 1999-12-20 2009-12-01 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8928077B2 (en) 2007-09-21 2015-01-06 Fairchild Semiconductor Corporation Superjunction structures for power devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145451A (en) * 1978-05-06 1979-11-13 Fujitsu Ltd Data collector unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145451A (en) * 1978-05-06 1979-11-13 Fujitsu Ltd Data collector unit

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7625793B2 (en) 1999-12-20 2009-12-01 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US9368587B2 (en) 2001-01-30 2016-06-14 Fairchild Semiconductor Corporation Accumulation-mode field effect transistor with improved current capability
US7429523B2 (en) 2001-10-17 2008-09-30 Fairchild Semiconductor Corporation Method of forming schottky diode with charge balance structure
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US7582519B2 (en) 2002-11-05 2009-09-01 Fairchild Semiconductor Corporation Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction
US8936985B2 (en) 2003-05-20 2015-01-20 Fairchild Semiconductor Corporation Methods related to power semiconductor devices with thick bottom oxide layers
US8889511B2 (en) 2003-05-20 2014-11-18 Fairchild Semiconductor Corporation Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7301203B2 (en) 2003-11-28 2007-11-27 Fairchild Korea Semiconductor Ltd. Superjunction semiconductor device
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7534683B2 (en) 2004-10-08 2009-05-19 Fairchild Semiconductor Corporation Method of making a MOS-gated transistor with reduced miller capacitance
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7473603B2 (en) 2006-06-19 2009-01-06 Fairchild Semiconductor Corporation Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US8928077B2 (en) 2007-09-21 2015-01-06 Fairchild Semiconductor Corporation Superjunction structures for power devices
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture

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