JPS626677B2 - - Google Patents

Info

Publication number
JPS626677B2
JPS626677B2 JP17118779A JP17118779A JPS626677B2 JP S626677 B2 JPS626677 B2 JP S626677B2 JP 17118779 A JP17118779 A JP 17118779A JP 17118779 A JP17118779 A JP 17118779A JP S626677 B2 JPS626677 B2 JP S626677B2
Authority
JP
Japan
Prior art keywords
cladding layer
substrate
view
active layer
main part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17118779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5696887A (en
Inventor
Hajime Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17118779A priority Critical patent/JPS5696887A/ja
Publication of JPS5696887A publication Critical patent/JPS5696887A/ja
Publication of JPS626677B2 publication Critical patent/JPS626677B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP17118779A 1979-12-29 1979-12-29 Semiconductor light emitting device Granted JPS5696887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17118779A JPS5696887A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17118779A JPS5696887A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS5696887A JPS5696887A (en) 1981-08-05
JPS626677B2 true JPS626677B2 (enrdf_load_html_response) 1987-02-12

Family

ID=15918608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17118779A Granted JPS5696887A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5696887A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006267324A (ja) * 2005-03-23 2006-10-05 Matsushita Electric Ind Co Ltd 光学素子およびコヒーレント光源

Also Published As

Publication number Publication date
JPS5696887A (en) 1981-08-05

Similar Documents

Publication Publication Date Title
US5045499A (en) Method of manufacturing a distributed brass reflector type semiconductor laser
US4360919A (en) Semiconductor light emitting device
US4525841A (en) Double channel planar buried heterostructure laser
JPS6318877B2 (enrdf_load_html_response)
US5524017A (en) Quantum well semiconductor laser
GB2129212A (en) Semiconductor laser devices
JPH01115188A (ja) 光半導体デバイス
JPS60789A (ja) 半導体レ−ザ装置
JPS626677B2 (enrdf_load_html_response)
JPS589592B2 (ja) 半導体発光装置の製造方法
JPS641952B2 (enrdf_load_html_response)
JPH0376287A (ja) ブロードエリアレーザ
JPS6342871B2 (enrdf_load_html_response)
US4860299A (en) Semiconductor laser device
JPS6148277B2 (enrdf_load_html_response)
JP2643370B2 (ja) 半導体レーザー
JPS6136720B2 (enrdf_load_html_response)
JPS6237833B2 (enrdf_load_html_response)
JPS5834988A (ja) 半導体レ−ザの製造方法
JPS59115582A (ja) 半導体レ−ザ
JPS625354B2 (enrdf_load_html_response)
JPH0228388A (ja) 半導体レーザ素子
JPH06291405A (ja) 半導体発光素子及びその製造方法
JPS6062177A (ja) 半導体レ−ザ
JPS58197789A (ja) 半導体レ−ザ