JPS626669B2 - - Google Patents

Info

Publication number
JPS626669B2
JPS626669B2 JP55024913A JP2491380A JPS626669B2 JP S626669 B2 JPS626669 B2 JP S626669B2 JP 55024913 A JP55024913 A JP 55024913A JP 2491380 A JP2491380 A JP 2491380A JP S626669 B2 JPS626669 B2 JP S626669B2
Authority
JP
Japan
Prior art keywords
drain
tox
channel region
gate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55024913A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56146275A (en
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP2491380A priority Critical patent/JPS56146275A/ja
Publication of JPS56146275A publication Critical patent/JPS56146275A/ja
Publication of JPS626669B2 publication Critical patent/JPS626669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
JP2491380A 1980-02-29 1980-02-29 Insulating gate type field-effect transistor Granted JPS56146275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2491380A JPS56146275A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2491380A JPS56146275A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS56146275A JPS56146275A (en) 1981-11-13
JPS626669B2 true JPS626669B2 (cs) 1987-02-12

Family

ID=12151402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2491380A Granted JPS56146275A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS56146275A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (ja) * 1982-12-13 1984-06-21 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
JPS56146275A (en) 1981-11-13

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