JPS626649B2 - - Google Patents
Info
- Publication number
- JPS626649B2 JPS626649B2 JP55003365A JP336580A JPS626649B2 JP S626649 B2 JPS626649 B2 JP S626649B2 JP 55003365 A JP55003365 A JP 55003365A JP 336580 A JP336580 A JP 336580A JP S626649 B2 JPS626649 B2 JP S626649B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode wiring
- ion
- ion implantation
- implanted
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP336580A JPS56100427A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP336580A JPS56100427A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56100427A JPS56100427A (en) | 1981-08-12 |
| JPS626649B2 true JPS626649B2 (es) | 1987-02-12 |
Family
ID=11555312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP336580A Granted JPS56100427A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56100427A (es) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH042360Y2 (es) * | 1987-02-28 | 1992-01-27 | ||
| JPH042361Y2 (es) * | 1987-02-28 | 1992-01-27 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384024A (ja) * | 1986-09-26 | 1988-04-14 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP5187771B2 (ja) * | 2009-12-11 | 2013-04-24 | 株式会社日本製鋼所 | 半導体基板の製造方法およびレーザアニール装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130184A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor ic resistance element process |
| JPS5691460A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Manufacturing of dispersion layer resistor |
-
1980
- 1980-01-16 JP JP336580A patent/JPS56100427A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130184A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor ic resistance element process |
| JPS5691460A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Manufacturing of dispersion layer resistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH042360Y2 (es) * | 1987-02-28 | 1992-01-27 | ||
| JPH042361Y2 (es) * | 1987-02-28 | 1992-01-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56100427A (en) | 1981-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5244828A (en) | Method of fabricating a quantum device | |
| US4398341A (en) | Method of fabricating a highly conductive structure | |
| JPS6259896B2 (es) | ||
| JPH01187814A (ja) | 薄膜半導体装置の製造方法 | |
| DE112018005967T5 (de) | Verfahren und anordnung für ohmschen kontakt in verdünnten siliciumcarbidvorrichtungen | |
| US4551907A (en) | Process for fabricating a semiconductor device | |
| JPS5891621A (ja) | 半導体装置の製造方法 | |
| JPS626649B2 (es) | ||
| JPH0799335A (ja) | 半導体膜の除去加工方法及び光起電力素子の製造方法 | |
| JP3431653B2 (ja) | Ｍｉｓ型半導体装置の作製方法 | |
| JP3182226B2 (ja) | 導電性多結晶シリコン膜の製造方法 | |
| JPS6159820A (ja) | 半導体装置の製造方法 | |
| JPS628007B2 (es) | ||
| JPH0410221B2 (es) | ||
| JP2670465B2 (ja) | 微細加工方法 | |
| JPH0257701B2 (es) | ||
| JPS5934626A (ja) | 半導体膜形成方法 | |
| EP0308588B1 (en) | Semiconductor-on-insulator fabrication method | |
| JPS63265464A (ja) | 半導体装置の製造方法 | |
| JPS583252A (ja) | 半導体集積回路装置 | |
| JPS6314435A (ja) | 微細構造形成方法 | |
| JP3301785B2 (ja) | 薄膜トランジスタ | |
| JPS628012B2 (es) | ||
| JPS6327857B2 (es) | ||
| JPS5918629A (ja) | 半導体装置の製造方法 |