JPS6327857B2 - - Google Patents
Info
- Publication number
- JPS6327857B2 JPS6327857B2 JP53119211A JP11921178A JPS6327857B2 JP S6327857 B2 JPS6327857 B2 JP S6327857B2 JP 53119211 A JP53119211 A JP 53119211A JP 11921178 A JP11921178 A JP 11921178A JP S6327857 B2 JPS6327857 B2 JP S6327857B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- film
- manufacturing
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 7
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11921178A JPS5546520A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
| US06/077,272 US4267011A (en) | 1978-09-29 | 1979-09-20 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11921178A JPS5546520A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5546520A JPS5546520A (en) | 1980-04-01 |
| JPS6327857B2 true JPS6327857B2 (es) | 1988-06-06 |
Family
ID=14755679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11921178A Granted JPS5546520A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5546520A (es) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100264518A1 (en) * | 2009-04-15 | 2010-10-21 | Lee Shura | Wafer and method for construction, strengthening and homogenization thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085874A (es) * | 1973-12-03 | 1975-07-10 | ||
| JPS5328385A (en) * | 1976-08-27 | 1978-03-16 | Fujitsu Ltd | Semiconductor device |
-
1978
- 1978-09-29 JP JP11921178A patent/JPS5546520A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085874A (es) * | 1973-12-03 | 1975-07-10 | ||
| JPS5328385A (en) * | 1976-08-27 | 1978-03-16 | Fujitsu Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5546520A (en) | 1980-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2774952B2 (ja) | 半導体素子の製造方法 | |
| US4267011A (en) | Method for manufacturing a semiconductor device | |
| JPH05109737A (ja) | 薄膜トランジスタの製造方法 | |
| JPH0834259B2 (ja) | １以上のバイポ−ラトランジスタを備えたモノリシツク集積回路の製造方法 | |
| US4551907A (en) | Process for fabricating a semiconductor device | |
| US4560421A (en) | Semiconductor device and method of manufacturing the same | |
| JP2675713B2 (ja) | 半導体装置及びその製造方法 | |
| JPH10209293A (ja) | 半導体装置の製造方法 | |
| KR20040103491A (ko) | 반도체 장치 및 그 제조 방법 | |
| JPS6327857B2 (es) | ||
| JPH0581051B2 (es) | ||
| JPH0677155A (ja) | 半導体基板の熱処理方法 | |
| JPS6161268B2 (es) | ||
| JPS6152987B2 (es) | ||
| JPH02863B2 (es) | ||
| JPH0348664B2 (es) | ||
| JPS6327858B2 (es) | ||
| JPS6231493B2 (es) | ||
| JPS6152986B2 (es) | ||
| JP3370029B2 (ja) | 半導体装置の作製方法 | |
| JPH056345B2 (es) | ||
| JPH11150181A (ja) | 半導体装置の製造方法 | |
| JP2630524B2 (ja) | 半導体装置の製造方法 | |
| KR100250686B1 (ko) | 반도체 소자 제조 방법 | |
| JP2745946B2 (ja) | 半導体集積回路の製造方法 |