JPS6231493B2 - - Google Patents
Info
- Publication number
- JPS6231493B2 JPS6231493B2 JP53119212A JP11921278A JPS6231493B2 JP S6231493 B2 JPS6231493 B2 JP S6231493B2 JP 53119212 A JP53119212 A JP 53119212A JP 11921278 A JP11921278 A JP 11921278A JP S6231493 B2 JPS6231493 B2 JP S6231493B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- film
- substrate
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 38
- 239000012535 impurity Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11921278A JPS5546521A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
| US06/077,272 US4267011A (en) | 1978-09-29 | 1979-09-20 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11921278A JPS5546521A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5546521A JPS5546521A (en) | 1980-04-01 |
| JPS6231493B2 true JPS6231493B2 (es) | 1987-07-08 |
Family
ID=14755706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11921278A Granted JPS5546521A (en) | 1978-09-29 | 1978-09-29 | Method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5546521A (es) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085874A (es) * | 1973-12-03 | 1975-07-10 | ||
| JPS5328385A (en) * | 1976-08-27 | 1978-03-16 | Fujitsu Ltd | Semiconductor device |
-
1978
- 1978-09-29 JP JP11921278A patent/JPS5546521A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085874A (es) * | 1973-12-03 | 1975-07-10 | ||
| JPS5328385A (en) * | 1976-08-27 | 1978-03-16 | Fujitsu Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5546521A (en) | 1980-04-01 |
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