JPS626643B2 - - Google Patents
Info
- Publication number
- JPS626643B2 JPS626643B2 JP6842879A JP6842879A JPS626643B2 JP S626643 B2 JPS626643 B2 JP S626643B2 JP 6842879 A JP6842879 A JP 6842879A JP 6842879 A JP6842879 A JP 6842879A JP S626643 B2 JPS626643 B2 JP S626643B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substance
- group
- molecular beam
- vapor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000126 substance Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 7
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims 4
- 239000007787 solid Substances 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 230000006641 stabilisation Effects 0.000 description 10
- 238000011105 stabilization Methods 0.000 description 10
- 238000001451 molecular beam epitaxy Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- OBSZRRSYVTXPNB-UHFFFAOYSA-N tetraphosphorus Chemical compound P12P3P1P32 OBSZRRSYVTXPNB-UHFFFAOYSA-N 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 102000006391 Ion Pumps Human genes 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- LULLIKNODDLMDQ-UHFFFAOYSA-N arsenic(3+) Chemical compound [As+3] LULLIKNODDLMDQ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6842879A JPS55160423A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6842879A JPS55160423A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55160423A JPS55160423A (en) | 1980-12-13 |
| JPS626643B2 true JPS626643B2 (en, 2012) | 1987-02-12 |
Family
ID=13373404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6842879A Granted JPS55160423A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55160423A (en, 2012) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59152296A (ja) * | 1983-02-17 | 1984-08-30 | Agency Of Ind Science & Technol | 分子線エピタキシヤル成長における分子線強度制御方法 |
| JPS59223293A (ja) * | 1983-05-31 | 1984-12-15 | Anelva Corp | 分子線エピタキシヤル成長装置 |
| JPH0637347B2 (ja) * | 1985-06-19 | 1994-05-18 | 株式会社日立製作所 | 容器もしくは容器内部材に付着した不要なヒ素の除去法 |
-
1979
- 1979-05-31 JP JP6842879A patent/JPS55160423A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55160423A (en) | 1980-12-13 |
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