JPS626347B2 - - Google Patents

Info

Publication number
JPS626347B2
JPS626347B2 JP50087397A JP8739775A JPS626347B2 JP S626347 B2 JPS626347 B2 JP S626347B2 JP 50087397 A JP50087397 A JP 50087397A JP 8739775 A JP8739775 A JP 8739775A JP S626347 B2 JPS626347 B2 JP S626347B2
Authority
JP
Japan
Prior art keywords
current
region
mos
semiconductor substrate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50087397A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5211872A (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP50087397A priority Critical patent/JPS5211872A/ja
Priority to GB29282/76A priority patent/GB1559582A/en
Priority to FR7621993A priority patent/FR2318503A1/fr
Priority to DE19762632447 priority patent/DE2632447A1/de
Priority to CH923676A priority patent/CH611739A5/xx
Publication of JPS5211872A publication Critical patent/JPS5211872A/ja
Priority to US05/917,175 priority patent/US4152717A/en
Priority to MY316/81A priority patent/MY8100316A/xx
Publication of JPS626347B2 publication Critical patent/JPS626347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP50087397A 1975-07-18 1975-07-18 Semiconductor device Granted JPS5211872A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device
GB29282/76A GB1559582A (en) 1975-07-18 1976-07-14 Complementary mosfet device
FR7621993A FR2318503A1 (fr) 1975-07-18 1976-07-19 Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire
DE19762632447 DE2632447A1 (de) 1975-07-18 1976-07-19 Cmos-halbleitervorrichtung
CH923676A CH611739A5 (en) 1975-07-18 1976-07-19 CMOS Semiconductor circuit
US05/917,175 US4152717A (en) 1975-07-18 1978-06-20 Complementary MOSFET device
MY316/81A MY8100316A (en) 1975-07-18 1981-12-30 A complementary mosfet device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5211872A JPS5211872A (en) 1977-01-29
JPS626347B2 true JPS626347B2 (en, 2012) 1987-02-10

Family

ID=13913732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087397A Granted JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Country Status (6)

Country Link
JP (1) JPS5211872A (en, 2012)
CH (1) CH611739A5 (en, 2012)
DE (1) DE2632447A1 (en, 2012)
FR (1) FR2318503A1 (en, 2012)
GB (1) GB1559582A (en, 2012)
MY (1) MY8100316A (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS58210660A (ja) * 1982-06-01 1983-12-07 Seiko Epson Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL302804A (en, 2012) * 1962-08-23 1900-01-01
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Also Published As

Publication number Publication date
FR2318503A1 (fr) 1977-02-11
JPS5211872A (en) 1977-01-29
MY8100316A (en) 1981-12-31
FR2318503B1 (en, 2012) 1980-05-16
GB1559582A (en) 1980-01-23
CH611739A5 (en) 1979-06-15
DE2632447A1 (de) 1977-01-20

Similar Documents

Publication Publication Date Title
US4327368A (en) CMOS Transistor pair with reverse biased substrate to prevent latch-up
US8048732B2 (en) Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor
US5751042A (en) Internal ESD protection circuit for semiconductor devices
TWI224851B (en) Electrostatic discharge protection element
GB2073490A (en) Complementary field-effect transistor integrated circuit device
US6844596B2 (en) Si-MOS high-frequency semiconductor device
US4035826A (en) Reduction of parasitic bipolar effects in integrated circuits employing insulated gate field effect transistors via the use of low resistance substrate contacts extending through source region
JP2528794B2 (ja) ラツチアツプ保護回路付き集積回路
JPH0821680B2 (ja) 集積回路
JP2710113B2 (ja) 相補性回路技術による集積回路
JPH06132538A (ja) ダイナミック絶縁回路を設けた半導体電子デバイス
US4725875A (en) Memory cell with diodes providing radiation hardness
US5514893A (en) Semiconductor device for protecting an internal circuit from electrostatic damage
US4168442A (en) CMOS FET device with abnormal current flow prevention
JPH0555251A (ja) Ｍｏｓトランジスタ
KR0136595B1 (ko) 상보형 mos 회로기술을 이용한 래치업 방지회로를 가진 집적회로
JPS626347B2 (en, 2012)
Lin et al. Shielded silicon gate complementary MOS integrated circuit
KR19990044143A (ko) Ｃｍｏｓ 오프 상태에서의 게이트 산화물 전계 감소
JPS6118866B2 (en, 2012)
JPS6118865B2 (en, 2012)
US5962898A (en) Field-effect transistor
US5760441A (en) Metal oxide semiconductor device
JPH0313754B2 (en, 2012)
JPS6112693Y2 (en, 2012)