JPS6262459B2 - - Google Patents

Info

Publication number
JPS6262459B2
JPS6262459B2 JP54109952A JP10995279A JPS6262459B2 JP S6262459 B2 JPS6262459 B2 JP S6262459B2 JP 54109952 A JP54109952 A JP 54109952A JP 10995279 A JP10995279 A JP 10995279A JP S6262459 B2 JPS6262459 B2 JP S6262459B2
Authority
JP
Japan
Prior art keywords
charge
value
thickness
semiconductor wafer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54109952A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5633842A (en
Inventor
Masataka Hisamichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10995279A priority Critical patent/JPS5633842A/ja
Publication of JPS5633842A publication Critical patent/JPS5633842A/ja
Publication of JPS6262459B2 publication Critical patent/JPS6262459B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)
JP10995279A 1979-08-28 1979-08-28 Manufacture of semiconductor device Granted JPS5633842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10995279A JPS5633842A (en) 1979-08-28 1979-08-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10995279A JPS5633842A (en) 1979-08-28 1979-08-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5633842A JPS5633842A (en) 1981-04-04
JPS6262459B2 true JPS6262459B2 (enrdf_load_stackoverflow) 1987-12-26

Family

ID=14523281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10995279A Granted JPS5633842A (en) 1979-08-28 1979-08-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5633842A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492658U (enrdf_load_stackoverflow) * 1990-12-29 1992-08-12

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3827949A (en) * 1972-03-29 1974-08-06 Ibm Anodic oxide passivated planar aluminum metallurgy system and method of producing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492658U (enrdf_load_stackoverflow) * 1990-12-29 1992-08-12

Also Published As

Publication number Publication date
JPS5633842A (en) 1981-04-04

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