JPS6262072B2 - - Google Patents

Info

Publication number
JPS6262072B2
JPS6262072B2 JP57181873A JP18187382A JPS6262072B2 JP S6262072 B2 JPS6262072 B2 JP S6262072B2 JP 57181873 A JP57181873 A JP 57181873A JP 18187382 A JP18187382 A JP 18187382A JP S6262072 B2 JPS6262072 B2 JP S6262072B2
Authority
JP
Japan
Prior art keywords
semiconductor
forming
weight
phosphorus
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57181873A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5969976A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57181873A priority Critical patent/JPS5969976A/ja
Publication of JPS5969976A publication Critical patent/JPS5969976A/ja
Publication of JPS6262072B2 publication Critical patent/JPS6262072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes

Landscapes

  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
JP57181873A 1982-10-15 1982-10-15 半導体装置およびその作製方法 Granted JPS5969976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57181873A JPS5969976A (ja) 1982-10-15 1982-10-15 半導体装置およびその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57181873A JPS5969976A (ja) 1982-10-15 1982-10-15 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPS5969976A JPS5969976A (ja) 1984-04-20
JPS6262072B2 true JPS6262072B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=16108341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57181873A Granted JPS5969976A (ja) 1982-10-15 1982-10-15 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPS5969976A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968886A (en) * 1989-08-30 1990-11-06 Texas Instruments Incorporated Infrared detector and method

Also Published As

Publication number Publication date
JPS5969976A (ja) 1984-04-20

Similar Documents

Publication Publication Date Title
JP3469729B2 (ja) 太陽電池素子
KR20100138565A (ko) 태양전지 및 그 제조방법
JP2024119716A (ja) 太陽電池及びその製造方法、太陽光発電モジュール
JP2000183379A (ja) 太陽電池の製造方法
JP2989373B2 (ja) 光電変換装置の製造方法
CN108886068B (zh) 太阳能电池、太阳能电池组件和太阳能电池的制造方法
JP3158027B2 (ja) 太陽電池及びその製造方法
US4903102A (en) Semiconductor photoelectric conversion device and method of making the same
KR102674774B1 (ko) 고광전변환효율 태양전지 및 고광전변환효율 태양전지의 제조 방법
JPS6231834B2 (enrdf_load_stackoverflow)
JP2896793B2 (ja) 光起電力装置の製造方法
JPS6262072B2 (enrdf_load_stackoverflow)
JP2538300B2 (ja) 光電変換装置
JPS6248394B2 (enrdf_load_stackoverflow)
KR101321538B1 (ko) 벌크형 실리콘 태양 전지 및 그 제조 방법
JPH1070296A (ja) 太陽電池及びその製造方法
JP2003158275A (ja) 光電変換素子およびその製造方法
JPH0521821A (ja) 光電変換装置
JP4185246B2 (ja) 積層型太陽電池及びその製造方法
JPS63170976A (ja) ａ−Ｓｉ光ダイオ−ドの製造方法
JP3158028B2 (ja) 太陽電池及びその製造方法
JPH0559590B2 (enrdf_load_stackoverflow)
JP2866474B2 (ja) 太陽電池及びその製造方法
JPH11307796A (ja) 太陽電池及びその製造方法
JP3069159B2 (ja) 太陽電池及びその製造方法