JPS6260662B2 - - Google Patents
Info
- Publication number
- JPS6260662B2 JPS6260662B2 JP55056901A JP5690180A JPS6260662B2 JP S6260662 B2 JPS6260662 B2 JP S6260662B2 JP 55056901 A JP55056901 A JP 55056901A JP 5690180 A JP5690180 A JP 5690180A JP S6260662 B2 JPS6260662 B2 JP S6260662B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- sensor
- source
- reference electrode
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005259 measurement Methods 0.000 claims description 13
- 230000001419 dependent effect Effects 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 15
- 239000007788 liquid Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5690180A JPS56153247A (en) | 1980-04-28 | 1980-04-28 | Measuring circuit for ion sensor |
| GB8112795A GB2077439B (en) | 1980-04-28 | 1981-04-24 | Compensating temperature-dependent characteristic changes in ion-sensitive fet transducers |
| US06/257,605 US4385274A (en) | 1980-04-28 | 1981-04-27 | Method and device for compensating temperature-dependent characteristic change in ion-sensitive FET transducer |
| DE19813116884 DE3116884A1 (de) | 1980-04-28 | 1981-04-28 | Verfahren und schaltung zur messung der ionenaktivitaet in fluessigkeiten |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5690180A JPS56153247A (en) | 1980-04-28 | 1980-04-28 | Measuring circuit for ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56153247A JPS56153247A (en) | 1981-11-27 |
| JPS6260662B2 true JPS6260662B2 (fr) | 1987-12-17 |
Family
ID=13040348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5690180A Granted JPS56153247A (en) | 1980-04-28 | 1980-04-28 | Measuring circuit for ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56153247A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0587062U (ja) * | 1992-04-22 | 1993-11-22 | 松下電工株式会社 | 埋込手洗器 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59171852A (ja) * | 1983-03-22 | 1984-09-28 | Nec Corp | 半導体イオンセンサ |
| JPS6029657A (ja) * | 1983-07-28 | 1985-02-15 | Mitsubishi Electric Corp | グルコースセンサの製造方法 |
| CA1228894A (fr) * | 1983-08-24 | 1987-11-03 | Hendrikus C.G. Ligtenberg | Appareil de mesure selective des ions dans un liquide |
| JPS61153559A (ja) * | 1984-12-27 | 1986-07-12 | Mitsubishi Electric Corp | 半導体酵素センサ |
| JPS636350U (fr) * | 1986-06-25 | 1988-01-16 | ||
| JP6506592B2 (ja) * | 2015-04-01 | 2019-04-24 | 日立オートモティブシステムズ株式会社 | センサ装置 |
-
1980
- 1980-04-28 JP JP5690180A patent/JPS56153247A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0587062U (ja) * | 1992-04-22 | 1993-11-22 | 松下電工株式会社 | 埋込手洗器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56153247A (en) | 1981-11-27 |
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