JPS636350U - - Google Patents
Info
- Publication number
- JPS636350U JPS636350U JP9725286U JP9725286U JPS636350U JP S636350 U JPS636350 U JP S636350U JP 9725286 U JP9725286 U JP 9725286U JP 9725286 U JP9725286 U JP 9725286U JP S636350 U JPS636350 U JP S636350U
- Authority
- JP
- Japan
- Prior art keywords
- ion
- semiconductor layer
- crystal substrate
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9725286U JPS636350U (fr) | 1986-06-25 | 1986-06-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9725286U JPS636350U (fr) | 1986-06-25 | 1986-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS636350U true JPS636350U (fr) | 1988-01-16 |
Family
ID=30964022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9725286U Pending JPS636350U (fr) | 1986-06-25 | 1986-06-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS636350U (fr) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56153247A (en) * | 1980-04-28 | 1981-11-27 | Kuraray Co Ltd | Measuring circuit for ion sensor |
| JPS59171852A (ja) * | 1983-03-22 | 1984-09-28 | Nec Corp | 半導体イオンセンサ |
-
1986
- 1986-06-25 JP JP9725286U patent/JPS636350U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56153247A (en) * | 1980-04-28 | 1981-11-27 | Kuraray Co Ltd | Measuring circuit for ion sensor |
| JPS59171852A (ja) * | 1983-03-22 | 1984-09-28 | Nec Corp | 半導体イオンセンサ |
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