JPS6259897B2 - - Google Patents

Info

Publication number
JPS6259897B2
JPS6259897B2 JP56170131A JP17013181A JPS6259897B2 JP S6259897 B2 JPS6259897 B2 JP S6259897B2 JP 56170131 A JP56170131 A JP 56170131A JP 17013181 A JP17013181 A JP 17013181A JP S6259897 B2 JPS6259897 B2 JP S6259897B2
Authority
JP
Japan
Prior art keywords
layer
film
solar cell
silicon
undercoat layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56170131A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5871666A (ja
Inventor
Kazutomi Suzuki
Mitsuaki Yano
Kenji Nakatani
Hiroshi Okaniwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP56170131A priority Critical patent/JPS5871666A/ja
Publication of JPS5871666A publication Critical patent/JPS5871666A/ja
Publication of JPS6259897B2 publication Critical patent/JPS6259897B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP56170131A 1981-10-26 1981-10-26 非晶質シリコン型薄膜太陽電池及びその製造方法 Granted JPS5871666A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56170131A JPS5871666A (ja) 1981-10-26 1981-10-26 非晶質シリコン型薄膜太陽電池及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56170131A JPS5871666A (ja) 1981-10-26 1981-10-26 非晶質シリコン型薄膜太陽電池及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5871666A JPS5871666A (ja) 1983-04-28
JPS6259897B2 true JPS6259897B2 (enExample) 1987-12-14

Family

ID=15899222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56170131A Granted JPS5871666A (ja) 1981-10-26 1981-10-26 非晶質シリコン型薄膜太陽電池及びその製造方法

Country Status (1)

Country Link
JP (1) JPS5871666A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112420914B (zh) * 2020-11-23 2022-09-16 济南晶正电子科技有限公司 一种复合薄膜、制备方法及电子元器件

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190368A (en) * 1981-05-19 1982-11-22 Matsushita Electric Ind Co Ltd Solar battery

Also Published As

Publication number Publication date
JPS5871666A (ja) 1983-04-28

Similar Documents

Publication Publication Date Title
JP5960221B2 (ja) 薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法
KR102610317B1 (ko) 신규한 카보실록산 중합체 조성물, 그 제조 방법 및 용도
JPH07263722A (ja) 半導体素子用コーテイング材
JPH06318728A (ja) 太陽電池モジュール
CN115451594B (zh) 一种宽光谱太阳能吸收增强器件及其制备方法
JPH06125103A (ja) 太陽電池モジュール
JP2001094128A (ja) 太陽電池モジュール及びその製造方法
CN105161558A (zh) 一种太阳能电池封装薄膜
JPH0738126A (ja) 光起電力素子および光起電力素子の製造方法
JPS6259897B2 (enExample)
CN117285258B (zh) 一种减反膜及其制备方法
JP2001060707A (ja) 光電変換装置
JP2000031509A (ja) 太陽電池モジュール
CN116404049A (zh) 石墨烯钝化的无机钙钛矿太阳能电池及其制备方法
JPH06196742A (ja) 太陽電池モジュール
JPH0659120A (ja) 波長帯域選択性吸収膜
JPH0370388B2 (enExample)
JP2001053316A (ja) 太陽電池モジュールおよびその製造方法
WO2001047033A1 (en) Photoelectric transducer and substrate for photoelectric transducer
Simonis et al. Porcelain enamelled absorbers, coated by spectral selective tin oxide
CN115785592B (zh) 基于表面改性氟塑料薄膜的二次表面镜及其制备方法和应用
JPS626494B2 (enExample)
Carver et al. Tin oxide-black molybdenum photothermal solar energy converters
JPH0572686B2 (enExample)
JPH01119074A (ja) 可撓性光電変換素子