JPS6258679B2 - - Google Patents
Info
- Publication number
- JPS6258679B2 JPS6258679B2 JP4560982A JP4560982A JPS6258679B2 JP S6258679 B2 JPS6258679 B2 JP S6258679B2 JP 4560982 A JP4560982 A JP 4560982A JP 4560982 A JP4560982 A JP 4560982A JP S6258679 B2 JPS6258679 B2 JP S6258679B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- carrier confinement
- light
- striped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 230000010355 oscillation Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4560982A JPS58164282A (ja) | 1982-03-24 | 1982-03-24 | 半導体レ−ザ装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4560982A JPS58164282A (ja) | 1982-03-24 | 1982-03-24 | 半導体レ−ザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58164282A JPS58164282A (ja) | 1983-09-29 |
| JPS6258679B2 true JPS6258679B2 (fr) | 1987-12-07 |
Family
ID=12724102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4560982A Granted JPS58164282A (ja) | 1982-03-24 | 1982-03-24 | 半導体レ−ザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58164282A (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0735074U (ja) * | 1993-12-14 | 1995-06-27 | 株式会社スガタ | ポストカードホルダー |
| JPH10506746A (ja) * | 1995-07-13 | 1998-06-30 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 論理的に連続するクラスタ間でデータを反復する方法およびシステム |
-
1982
- 1982-03-24 JP JP4560982A patent/JPS58164282A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0735074U (ja) * | 1993-12-14 | 1995-06-27 | 株式会社スガタ | ポストカードホルダー |
| JPH10506746A (ja) * | 1995-07-13 | 1998-06-30 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 論理的に連続するクラスタ間でデータを反復する方法およびシステム |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58164282A (ja) | 1983-09-29 |
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