JPS6258631A - マイクロ波プラズマ処理装置 - Google Patents

マイクロ波プラズマ処理装置

Info

Publication number
JPS6258631A
JPS6258631A JP19823785A JP19823785A JPS6258631A JP S6258631 A JPS6258631 A JP S6258631A JP 19823785 A JP19823785 A JP 19823785A JP 19823785 A JP19823785 A JP 19823785A JP S6258631 A JPS6258631 A JP S6258631A
Authority
JP
Japan
Prior art keywords
microwave
plasma processing
plasma
transmission window
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19823785A
Other languages
English (en)
Japanese (ja)
Other versions
JPH053734B2 (enrdf_load_stackoverflow
Inventor
Shuzo Fujimura
藤村 修三
Yasunari Motoki
本木 保成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19823785A priority Critical patent/JPS6258631A/ja
Publication of JPS6258631A publication Critical patent/JPS6258631A/ja
Publication of JPH053734B2 publication Critical patent/JPH053734B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP19823785A 1985-09-06 1985-09-06 マイクロ波プラズマ処理装置 Granted JPS6258631A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19823785A JPS6258631A (ja) 1985-09-06 1985-09-06 マイクロ波プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19823785A JPS6258631A (ja) 1985-09-06 1985-09-06 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS6258631A true JPS6258631A (ja) 1987-03-14
JPH053734B2 JPH053734B2 (enrdf_load_stackoverflow) 1993-01-18

Family

ID=16387782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19823785A Granted JPS6258631A (ja) 1985-09-06 1985-09-06 マイクロ波プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS6258631A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236327A (ja) * 1987-03-25 1988-10-03 Hitachi Ltd プラズマ処理装置
JPS63263725A (ja) * 1987-04-22 1988-10-31 Hitachi Ltd プラズマ処理装置
JPS6423364A (en) * 1987-07-20 1989-01-26 Mitsubishi Electric Corp Document editing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236327A (ja) * 1987-03-25 1988-10-03 Hitachi Ltd プラズマ処理装置
JPS63263725A (ja) * 1987-04-22 1988-10-31 Hitachi Ltd プラズマ処理装置
JPS6423364A (en) * 1987-07-20 1989-01-26 Mitsubishi Electric Corp Document editing device

Also Published As

Publication number Publication date
JPH053734B2 (enrdf_load_stackoverflow) 1993-01-18

Similar Documents

Publication Publication Date Title
WO2007004576A1 (ja) プラズマ処理装置及びプラズマ処理方法
JP2001338918A (ja) プラズマ処理装置
JPH053732B2 (enrdf_load_stackoverflow)
JP3266076B2 (ja) マイクロ波プラズマ処理装置及びその実施に使用する対向電極
JPS6258631A (ja) マイクロ波プラズマ処理装置
JP2980856B2 (ja) プラズマ処理装置
JPS6231112A (ja) マイクロ波プラズマ反応装置
JPS593927A (ja) 薄膜のエツチング方法
JPS6269613A (ja) レジストパタ−ンのハ−ドニング方法
JPH1126187A (ja) プラズマ処理装置及びプラズマ処理方法
JPS6258632A (ja) マイクロ波プラズマ処理装置
JPH0352217B2 (enrdf_load_stackoverflow)
JPS62291031A (ja) プラズマ処理装置
JP2551125B2 (ja) マイクロ波処理装置
JPS61222131A (ja) マイクロ波プラズマ処理装置
JPH0614521B2 (ja) マイクロ波プラズマ処理装置
JP3042347B2 (ja) プラズマ装置
JP2006013058A (ja) ドライエッチング装置
JP2001118698A (ja) 表面波励起プラズマの生成方法およびプラズマ発生装置
JPS63221622A (ja) 乾式薄膜加工装置
JPH0513375B2 (enrdf_load_stackoverflow)
JPH02139900A (ja) プラズマ装置
JP2845663B2 (ja) 反応性イオンエッチング装置
JPH053736B2 (enrdf_load_stackoverflow)
JPH0330325A (ja) 低温処理装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees