JPH053732B2 - - Google Patents

Info

Publication number
JPH053732B2
JPH053732B2 JP59252909A JP25290984A JPH053732B2 JP H053732 B2 JPH053732 B2 JP H053732B2 JP 59252909 A JP59252909 A JP 59252909A JP 25290984 A JP25290984 A JP 25290984A JP H053732 B2 JPH053732 B2 JP H053732B2
Authority
JP
Japan
Prior art keywords
microwave
plasma
window
vacuum
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59252909A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61131454A (ja
Inventor
Shuzo Fujimura
Toshimasa Kisa
Yasunari Motoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59252909A priority Critical patent/JPS61131454A/ja
Priority to DE8585308698T priority patent/DE3581605D1/de
Priority to EP85308698A priority patent/EP0183561B1/en
Priority to KR8508983A priority patent/KR900000441B1/ko
Publication of JPS61131454A publication Critical patent/JPS61131454A/ja
Publication of JPH053732B2 publication Critical patent/JPH053732B2/ja
Priority to US08/054,609 priority patent/US5364519A/en
Priority to US08/749,654 priority patent/USRE36224E/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP59252909A 1984-11-30 1984-11-30 マイクロ波プラズマ処理方法と装置 Granted JPS61131454A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59252909A JPS61131454A (ja) 1984-11-30 1984-11-30 マイクロ波プラズマ処理方法と装置
DE8585308698T DE3581605D1 (de) 1984-11-30 1985-11-29 Bearbeitungsverfahren und -vorrichtung mittels mikrowellenplasma.
EP85308698A EP0183561B1 (en) 1984-11-30 1985-11-29 Microwave plasma processing process and apparatus
KR8508983A KR900000441B1 (en) 1984-11-30 1985-11-30 Microwave plasma process and device therefor
US08/054,609 US5364519A (en) 1984-11-30 1993-04-30 Microwave plasma processing process and apparatus
US08/749,654 USRE36224E (en) 1984-11-30 1996-11-15 Microwave plasma processing process and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59252909A JPS61131454A (ja) 1984-11-30 1984-11-30 マイクロ波プラズマ処理方法と装置

Publications (2)

Publication Number Publication Date
JPS61131454A JPS61131454A (ja) 1986-06-19
JPH053732B2 true JPH053732B2 (enrdf_load_stackoverflow) 1993-01-18

Family

ID=17243852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59252909A Granted JPS61131454A (ja) 1984-11-30 1984-11-30 マイクロ波プラズマ処理方法と装置

Country Status (5)

Country Link
US (1) USRE36224E (enrdf_load_stackoverflow)
EP (1) EP0183561B1 (enrdf_load_stackoverflow)
JP (1) JPS61131454A (enrdf_load_stackoverflow)
KR (1) KR900000441B1 (enrdf_load_stackoverflow)
DE (1) DE3581605D1 (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
JPH079359Y2 (ja) * 1986-04-23 1995-03-06 新日本無線株式会社 プラズマ装置
US4776918A (en) * 1986-10-20 1988-10-11 Hitachi, Ltd. Plasma processing apparatus
US4804431A (en) * 1987-11-03 1989-02-14 Aaron Ribner Microwave plasma etching machine and method of etching
FR2631199B1 (fr) * 1988-05-09 1991-03-15 Centre Nat Rech Scient Reacteur a plasma
JP2760845B2 (ja) * 1988-07-08 1998-06-04 株式会社日立製作所 プラズマ処理装置及びその方法
EP0402867B1 (en) * 1989-06-15 1995-03-01 Sel Semiconductor Energy Laboratory Co., Ltd. Apparatus for microwave processing in a magnetic field
US5037666A (en) * 1989-08-03 1991-08-06 Uha Mikakuto Precision Engineering Research Institute Co., Ltd. High-speed film forming method by microwave plasma chemical vapor deposition (CVD) under high pressure
DE9013937U1 (de) * 1990-10-06 1992-02-06 Röhm GmbH, 64293 Darmstadt Mikrowellenstrahler
US5359177A (en) * 1990-11-14 1994-10-25 Mitsubishi Denki Kabushiki Kaisha Microwave plasma apparatus for generating a uniform plasma
DE4037091C2 (de) * 1990-11-22 1996-06-20 Leybold Ag Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
WO1995027998A1 (de) * 1994-04-11 1995-10-19 Wu Jeng Ming Plasmagerät
DE69524671T2 (de) * 1994-06-14 2002-08-14 Nec Corp., Tokio/Tokyo Mikrowellenplasma-Bearbeitungssystem
EP0702393A3 (en) * 1994-09-16 1997-03-26 Daihen Corp Plasma processing apparatus for introducing a micrometric wave from a rectangular waveguide, through an elongated sheet into the plasma chamber
US6798711B2 (en) 2002-03-19 2004-09-28 Micron Technology, Inc. Memory with address management

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1523267A (en) * 1976-04-15 1978-08-31 Hitachi Ltd Plasma etching apparatus
JPS5448172A (en) * 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
US4330384A (en) * 1978-10-27 1982-05-18 Hitachi, Ltd. Process for plasma etching
JPS55131175A (en) * 1979-03-30 1980-10-11 Toshiba Corp Surface treatment apparatus with microwave plasma
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
FR2463975A1 (fr) * 1979-08-22 1981-02-27 Onera (Off Nat Aerospatiale) Procede et appareil pour la gravure chimique par voie seche des circuits integres
JPS5673539A (en) * 1979-11-22 1981-06-18 Toshiba Corp Surface treating apparatus of microwave plasma
JPS5751265A (en) * 1980-09-10 1982-03-26 Hitachi Ltd Microwave plasma etching device
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
JPS58202532A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd マイクロ波プラズマ放電管
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置
JPS6037129A (ja) * 1983-08-10 1985-02-26 Hitachi Ltd 半導体製造装置
JPS614177A (ja) * 1984-06-18 1986-01-10 松下電器産業株式会社 アダプタ装置

Also Published As

Publication number Publication date
KR900000441B1 (en) 1990-01-30
JPS61131454A (ja) 1986-06-19
EP0183561A3 (en) 1988-05-25
EP0183561A2 (en) 1986-06-04
EP0183561B1 (en) 1991-01-30
DE3581605D1 (de) 1991-03-07
USRE36224E (en) 1999-06-08

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term