JPS6256670B2 - - Google Patents
Info
- Publication number
- JPS6256670B2 JPS6256670B2 JP53136568A JP13656878A JPS6256670B2 JP S6256670 B2 JPS6256670 B2 JP S6256670B2 JP 53136568 A JP53136568 A JP 53136568A JP 13656878 A JP13656878 A JP 13656878A JP S6256670 B2 JPS6256670 B2 JP S6256670B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- polycrystalline silicon
- metal
- semiconductor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 56
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 38
- 239000010408 film Substances 0.000 description 33
- 239000010409 thin film Substances 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 12
- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 229910021339 platinum silicide Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 125000004437 phosphorous atom Chemical group 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13656878A JPS5563821A (en) | 1978-11-06 | 1978-11-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13656878A JPS5563821A (en) | 1978-11-06 | 1978-11-06 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5563821A JPS5563821A (en) | 1980-05-14 |
| JPS6256670B2 true JPS6256670B2 (US08066781-20111129-C00013.png) | 1987-11-26 |
Family
ID=15178287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13656878A Granted JPS5563821A (en) | 1978-11-06 | 1978-11-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5563821A (US08066781-20111129-C00013.png) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56153757A (en) * | 1980-04-30 | 1981-11-27 | Nec Corp | Semiconductor device |
| JPS5730366A (en) * | 1980-07-30 | 1982-02-18 | Oki Electric Ind Co Ltd | Schottky transistor and manufacture thereof |
| JPS59112655A (ja) * | 1982-12-18 | 1984-06-29 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US4512076A (en) * | 1982-12-20 | 1985-04-23 | Raytheon Company | Semiconductor device fabrication process |
| JPS6037774A (ja) * | 1983-08-10 | 1985-02-27 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS6037787A (ja) * | 1983-08-11 | 1985-02-27 | Nec Corp | 半導体装置 |
| JPS60207375A (ja) * | 1984-03-30 | 1985-10-18 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS61160972A (ja) * | 1985-01-08 | 1986-07-21 | Nippon Gakki Seizo Kk | 半導体装置の製法 |
| JPS6252965A (ja) * | 1985-09-02 | 1987-03-07 | Toshiba Corp | 半導体装置の製造方法 |
| EP0226293B1 (en) * | 1985-10-16 | 1992-04-22 | Texas Instruments Incorporated | Method for producing a buried contact schottky logic array, and device produced thereby |
| US4898838A (en) * | 1985-10-16 | 1990-02-06 | Texas Instruments Incorporated | Method for fabricating a poly emitter logic array |
| JPH0810697B2 (ja) * | 1985-11-18 | 1996-01-31 | テキサス インスツルメンツ インコ−ポレイテツド | トランジスタ |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5272586A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
| JPS5310979A (en) * | 1976-07-16 | 1978-01-31 | Mitsubishi Electric Corp | Semiconductor device and its production |
| JPS5382275A (en) * | 1976-12-28 | 1978-07-20 | Fujitsu Ltd | Production of semiconductor device |
-
1978
- 1978-11-06 JP JP13656878A patent/JPS5563821A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5272586A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
| JPS5310979A (en) * | 1976-07-16 | 1978-01-31 | Mitsubishi Electric Corp | Semiconductor device and its production |
| JPS5382275A (en) * | 1976-12-28 | 1978-07-20 | Fujitsu Ltd | Production of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5563821A (en) | 1980-05-14 |
