JPS6255694B2 - - Google Patents

Info

Publication number
JPS6255694B2
JPS6255694B2 JP9818580A JP9818580A JPS6255694B2 JP S6255694 B2 JPS6255694 B2 JP S6255694B2 JP 9818580 A JP9818580 A JP 9818580A JP 9818580 A JP9818580 A JP 9818580A JP S6255694 B2 JPS6255694 B2 JP S6255694B2
Authority
JP
Japan
Prior art keywords
hole
interlayer insulating
insulating film
aqueous solution
gas plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9818580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5724540A (en
Inventor
Yoshiharu Ozaki
Kazuo Hirata
Hitoshi Tooda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9818580A priority Critical patent/JPS5724540A/ja
Publication of JPS5724540A publication Critical patent/JPS5724540A/ja
Publication of JPS6255694B2 publication Critical patent/JPS6255694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP9818580A 1980-07-19 1980-07-19 Rinsing of through hole in semiconductor device Granted JPS5724540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9818580A JPS5724540A (en) 1980-07-19 1980-07-19 Rinsing of through hole in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9818580A JPS5724540A (en) 1980-07-19 1980-07-19 Rinsing of through hole in semiconductor device

Publications (2)

Publication Number Publication Date
JPS5724540A JPS5724540A (en) 1982-02-09
JPS6255694B2 true JPS6255694B2 (en:Method) 1987-11-20

Family

ID=14212954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9818580A Granted JPS5724540A (en) 1980-07-19 1980-07-19 Rinsing of through hole in semiconductor device

Country Status (1)

Country Link
JP (1) JPS5724540A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768033A (en) * 1980-10-16 1982-04-26 Toshiba Corp Manufacture of semiconductor device
JPS61194833A (ja) * 1985-02-25 1986-08-29 Fujitsu Ltd シリコン基板のエツチング処理方法
JPS62252134A (ja) * 1986-04-24 1987-11-02 Matsushita Electric Ind Co Ltd 化合物半導体装置の製造方法
JPS63190380A (ja) * 1987-02-02 1988-08-05 Matsushita Electronics Corp 半導体装置の製造方法
US4826784A (en) * 1987-11-13 1989-05-02 Kopin Corporation Selective OMCVD growth of compound semiconductor materials on silicon substrates
JP2786680B2 (ja) * 1989-07-24 1998-08-13 シャープ株式会社 半導体装置の製造方法
JP2589578B2 (ja) * 1989-09-13 1997-03-12 富士写真フイルム株式会社 現像用ブラシ
JP3328250B2 (ja) 1998-12-09 2002-09-24 岸本産業株式会社 レジスト残渣除去剤

Also Published As

Publication number Publication date
JPS5724540A (en) 1982-02-09

Similar Documents

Publication Publication Date Title
US5017513A (en) Method for manufacturing a semiconductor device
US5650041A (en) Semiconductor device fabrication method
US5942446A (en) Fluorocarbon polymer layer deposition predominant pre-etch plasma etch method for forming patterned silicon containing dielectric layer
JP2903884B2 (ja) 半導体装置の製法
US7396769B2 (en) Method for stripping photoresist from etched wafer
JP3088178B2 (ja) ポリシリコン膜のエッチング方法
JPS6255694B2 (en:Method)
JPH06151387A (ja) シリコンの精密加工方法
US3767492A (en) Semiconductor masking
JPH03280532A (ja) 半導体装置の製造方法
JPH0313744B2 (en:Method)
US5509995A (en) Process for anisotropically etching semiconductor material
JPH05343363A (ja) ドライエッチング方法
JPH02119135A (ja) 半導体装置およびその製造方法
JP2678049B2 (ja) 半導体装置の洗浄方法
JPH02275627A (ja) 半導体装置の製造方法
JPH05217961A (ja) シリコンの精密加工方法
JPS60254733A (ja) パタ−ン形成法
JP2003017436A (ja) 半導体装置の製造方法
TW410469B (en) Manufacturing method for bottom electrode of stack capacitors
JPH0451520A (ja) 半導体装置の製造方法
JPH04317357A (ja) 半導体装置の製造方法
JPH0558263B2 (en:Method)
JPH07135198A (ja) エッチング方法
JPH0218577B2 (en:Method)