JPS6252472B2 - - Google Patents

Info

Publication number
JPS6252472B2
JPS6252472B2 JP53053110A JP5311078A JPS6252472B2 JP S6252472 B2 JPS6252472 B2 JP S6252472B2 JP 53053110 A JP53053110 A JP 53053110A JP 5311078 A JP5311078 A JP 5311078A JP S6252472 B2 JPS6252472 B2 JP S6252472B2
Authority
JP
Japan
Prior art keywords
region
forming
type
dsa
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53053110A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54144882A (en
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP5311078A priority Critical patent/JPS54144882A/ja
Publication of JPS54144882A publication Critical patent/JPS54144882A/ja
Publication of JPS6252472B2 publication Critical patent/JPS6252472B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP5311078A 1978-05-02 1978-05-02 Method of fabricating semiconductor device Granted JPS54144882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5311078A JPS54144882A (en) 1978-05-02 1978-05-02 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5311078A JPS54144882A (en) 1978-05-02 1978-05-02 Method of fabricating semiconductor device

Publications (2)

Publication Number Publication Date
JPS54144882A JPS54144882A (en) 1979-11-12
JPS6252472B2 true JPS6252472B2 (enExample) 1987-11-05

Family

ID=12933649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5311078A Granted JPS54144882A (en) 1978-05-02 1978-05-02 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS54144882A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5652455B2 (enExample) * 1972-10-20 1981-12-12
JPS5154365A (en) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaisochino seizohoho

Also Published As

Publication number Publication date
JPS54144882A (en) 1979-11-12

Similar Documents

Publication Publication Date Title
JP2826924B2 (ja) Ｍｏｓｆｅｔの製造方法
CA1038967A (en) Mosfet transistor and method of fabrication
US4219835A (en) VMOS Mesa structure and manufacturing process
US4402761A (en) Method of making self-aligned gate MOS device having small channel lengths
JPH0355984B2 (enExample)
US3943542A (en) High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
US4412375A (en) Method for fabricating CMOS devices with guardband
JPH06350090A (ja) 半導体装置の製造方法
US4507846A (en) Method for making complementary MOS semiconductor devices
US3338758A (en) Surface gradient protected high breakdown junctions
JPH025432A (ja) 半導体装置の製造方法
JP3489602B2 (ja) 半導体装置およびその製造方法
US4054989A (en) High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
JP2515524B2 (ja) 絶縁ゲ―ト電界効果トランジスタの製造方法
JPS6252472B2 (enExample)
EP0481965A2 (en) Step-cut insulated gate static induction transistors and method of manufacturing the same
GB2038088A (en) Semiconductor structures
JPS6240857B2 (enExample)
JPH0350771A (ja) 半導体装置
JPS6237543B2 (enExample)
JPH05235346A (ja) 半導体装置及びその製造方法
JP3048261B2 (ja) 半導体装置の製造方法
JPS6211516B2 (enExample)
JPH02121369A (ja) Ｍｉｓ型電界効果トランジスタ
JPS6346773A (ja) Ｍｏｓトランジスタの製造方法