JPS6252459B2 - - Google Patents

Info

Publication number
JPS6252459B2
JPS6252459B2 JP54008952A JP895279A JPS6252459B2 JP S6252459 B2 JPS6252459 B2 JP S6252459B2 JP 54008952 A JP54008952 A JP 54008952A JP 895279 A JP895279 A JP 895279A JP S6252459 B2 JPS6252459 B2 JP S6252459B2
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
heat
forming
resistant film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54008952A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55102252A (en
Inventor
Haruo Amano
Hideto Goto
Koji Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP895279A priority Critical patent/JPS55102252A/ja
Publication of JPS55102252A publication Critical patent/JPS55102252A/ja
Publication of JPS6252459B2 publication Critical patent/JPS6252459B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP895279A 1979-01-29 1979-01-29 Manufacture of semiconductor device Granted JPS55102252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP895279A JPS55102252A (en) 1979-01-29 1979-01-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP895279A JPS55102252A (en) 1979-01-29 1979-01-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55102252A JPS55102252A (en) 1980-08-05
JPS6252459B2 true JPS6252459B2 (enExample) 1987-11-05

Family

ID=11707000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP895279A Granted JPS55102252A (en) 1979-01-29 1979-01-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55102252A (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915495B2 (ja) * 1974-10-04 1984-04-10 日本電気株式会社 半導体装置
JPS5365083A (en) * 1976-11-22 1978-06-10 Nec Corp Production of field effect mos semiconductor device
JPS5386177A (en) * 1977-01-07 1978-07-29 Matsushita Electric Ind Co Ltd Production of semiconductor device

Also Published As

Publication number Publication date
JPS55102252A (en) 1980-08-05

Similar Documents

Publication Publication Date Title
JPH0228902B2 (enExample)
JPS6242385B2 (enExample)
JPH0775243B2 (ja) 半導体装置の製造方法
KR940011478B1 (ko) 반도체 장치의 제조방법
US4410375A (en) Method for fabricating a semiconductor device
JPS62291176A (ja) 半導体装置の製造方法
JPH0127589B2 (enExample)
JPS6310896B2 (enExample)
JPH0471236A (ja) 半導体装置の製造方法
JPS6237543B2 (enExample)
JP2707536B2 (ja) 半導体装置の製造方法
JPS6238869B2 (enExample)
JP2513312B2 (ja) Ｍｏｓトランジスタの製造方法
JPH0115148B2 (enExample)
JPS6037614B2 (ja) 半導体装置の製造方法
JPS6154661A (ja) 半導体装置の製造方法
JPS61251163A (ja) Ｂｉ−ＭＩＳ集積回路の製造方法
JPS61251165A (ja) Ｂｉ−ＭＩＳ集積回路の製造方法
JPS6134255B2 (enExample)
JPH0126186B2 (enExample)
JPS6117154B2 (enExample)
JPS6117144B2 (enExample)
JPS61251164A (ja) Ｂｉ−ＭＩＳ集積回路の製造方法
JPS59105367A (ja) Ｍｏｓ型トランジスタの製造方法
JPS6360534B2 (enExample)