JPS6251506B2 - - Google Patents

Info

Publication number
JPS6251506B2
JPS6251506B2 JP10970882A JP10970882A JPS6251506B2 JP S6251506 B2 JPS6251506 B2 JP S6251506B2 JP 10970882 A JP10970882 A JP 10970882A JP 10970882 A JP10970882 A JP 10970882A JP S6251506 B2 JPS6251506 B2 JP S6251506B2
Authority
JP
Japan
Prior art keywords
voltage
ctd
reset
output
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10970882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59963A (ja
Inventor
Shuzo Matsumoto
Kazuo Kondo
Isao Akitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10970882A priority Critical patent/JPS59963A/ja
Publication of JPS59963A publication Critical patent/JPS59963A/ja
Publication of JPS6251506B2 publication Critical patent/JPS6251506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP10970882A 1982-06-28 1982-06-28 電荷転送装置 Granted JPS59963A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10970882A JPS59963A (ja) 1982-06-28 1982-06-28 電荷転送装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10970882A JPS59963A (ja) 1982-06-28 1982-06-28 電荷転送装置

Publications (2)

Publication Number Publication Date
JPS59963A JPS59963A (ja) 1984-01-06
JPS6251506B2 true JPS6251506B2 (fr) 1987-10-30

Family

ID=14517199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10970882A Granted JPS59963A (ja) 1982-06-28 1982-06-28 電荷転送装置

Country Status (1)

Country Link
JP (1) JPS59963A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4996686A (en) * 1987-05-21 1991-02-26 Kabushiki Kaisha Toshiba Charge transfer device with reset voltage generating circuit
JP2786665B2 (ja) * 1989-04-14 1998-08-13 株式会社東芝 電荷転送装置
JP2904962B2 (ja) * 1991-07-18 1999-06-14 松下電器産業株式会社 昇圧装置
US7570192B2 (en) * 2007-01-19 2009-08-04 Kenet Incorporated Charge-domain pipelined analog-to-digital converter
EP2106586B1 (fr) 2007-01-23 2014-11-12 Kenet, Inc. Correction analogique d'erreurs pour un convertisseur analogique-numérique avec domaine de charge en pipeline

Also Published As

Publication number Publication date
JPS59963A (ja) 1984-01-06

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