JPS6251238B2 - - Google Patents
Info
- Publication number
- JPS6251238B2 JPS6251238B2 JP13028683A JP13028683A JPS6251238B2 JP S6251238 B2 JPS6251238 B2 JP S6251238B2 JP 13028683 A JP13028683 A JP 13028683A JP 13028683 A JP13028683 A JP 13028683A JP S6251238 B2 JPS6251238 B2 JP S6251238B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crystal
- support jig
- cavity
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 51
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 description 12
- 239000000565 sealant Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- -1 this Currently Chemical compound 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13028683A JPS6021900A (ja) | 1983-07-19 | 1983-07-19 | 化合物半導体単結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13028683A JPS6021900A (ja) | 1983-07-19 | 1983-07-19 | 化合物半導体単結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6021900A JPS6021900A (ja) | 1985-02-04 |
| JPS6251238B2 true JPS6251238B2 (en, 2012) | 1987-10-29 |
Family
ID=15030680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13028683A Granted JPS6021900A (ja) | 1983-07-19 | 1983-07-19 | 化合物半導体単結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6021900A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03199924A (ja) * | 1989-12-27 | 1991-08-30 | Dai Showa Seishi Kk | ロール状物の計量法とこれに用いる計量装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2579951B2 (ja) * | 1987-09-14 | 1997-02-12 | 株式会社東芝 | 半導体単結晶の製造装置 |
| FR2664647B1 (fr) * | 1990-07-12 | 1994-08-26 | Europ Propulsion | Distributeur, notamment pour turbine, a aubes fixes en materiau composite thermostructural, et procede de fabrication. |
| KR101516486B1 (ko) * | 2013-09-25 | 2015-05-04 | 주식회사 엘지실트론 | 잉곳성장장치 |
-
1983
- 1983-07-19 JP JP13028683A patent/JPS6021900A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03199924A (ja) * | 1989-12-27 | 1991-08-30 | Dai Showa Seishi Kk | ロール状物の計量法とこれに用いる計量装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6021900A (ja) | 1985-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3002824A (en) | Method and apparatus for the manufacture of crystalline semiconductors | |
| US4664742A (en) | Method for growing single crystals of dissociative compounds | |
| US5895527A (en) | Single crystal pulling apparatus | |
| JPS6251238B2 (en, 2012) | ||
| JPS6251237B2 (en, 2012) | ||
| JPS6117798B2 (en, 2012) | ||
| JP3018738B2 (ja) | 単結晶製造装置 | |
| JPS6339558B2 (en, 2012) | ||
| JP3042168B2 (ja) | 単結晶製造装置 | |
| JP2006327879A (ja) | 化合物半導体単結晶の製造方法 | |
| JPS6090897A (ja) | 化合物半導体単結晶の製造方法および製造装置 | |
| JPS6018637B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JP2005200228A (ja) | 化合物半導体単結晶成長方法 | |
| JP4207783B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JP3247829B2 (ja) | 結晶成長炉および結晶成長方法 | |
| JP2700145B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPS58151398A (ja) | ３−５族化合物半導体単結晶の引上方法 | |
| JPH0524964A (ja) | 化合物半導体単結晶の製造方法 | |
| JPS5957992A (ja) | 化合物半導体単結晶の製造方法 | |
| JPH0371396B2 (en, 2012) | ||
| JP4155085B2 (ja) | 化合物半導体単結晶の製造方法 | |
| KR920007335B1 (ko) | GaAs 단결정 제조장치 | |
| JPH0329752B2 (en, 2012) | ||
| JPH01122995A (ja) | 化合物半導体単結晶の成長方法 | |
| JPH0360798B2 (en, 2012) |