JPS6250994B2 - - Google Patents
Info
- Publication number
- JPS6250994B2 JPS6250994B2 JP54061745A JP6174579A JPS6250994B2 JP S6250994 B2 JPS6250994 B2 JP S6250994B2 JP 54061745 A JP54061745 A JP 54061745A JP 6174579 A JP6174579 A JP 6174579A JP S6250994 B2 JPS6250994 B2 JP S6250994B2
- Authority
- JP
- Japan
- Prior art keywords
- insb
- hall element
- evaporation
- substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 22
- 238000001704 evaporation Methods 0.000 claims description 16
- 230000008020 evaporation Effects 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000000746 purification Methods 0.000 description 4
- 238000007670 refining Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6174579A JPS55153382A (en) | 1979-05-18 | 1979-05-18 | Production of insb thin hall element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6174579A JPS55153382A (en) | 1979-05-18 | 1979-05-18 | Production of insb thin hall element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55153382A JPS55153382A (en) | 1980-11-29 |
| JPS6250994B2 true JPS6250994B2 (en, 2012) | 1987-10-28 |
Family
ID=13180009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6174579A Granted JPS55153382A (en) | 1979-05-18 | 1979-05-18 | Production of insb thin hall element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55153382A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383080U (en, 2012) * | 1989-12-14 | 1991-08-23 |
-
1979
- 1979-05-18 JP JP6174579A patent/JPS55153382A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383080U (en, 2012) * | 1989-12-14 | 1991-08-23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55153382A (en) | 1980-11-29 |
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