JPS62502319A - 固体材料の精製方法 - Google Patents
固体材料の精製方法Info
- Publication number
- JPS62502319A JPS62502319A JP61502717A JP50271786A JPS62502319A JP S62502319 A JPS62502319 A JP S62502319A JP 61502717 A JP61502717 A JP 61502717A JP 50271786 A JP50271786 A JP 50271786A JP S62502319 A JPS62502319 A JP S62502319A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- solid material
- refining agent
- purified
- refining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 91
- 238000007670 refining Methods 0.000 title claims description 89
- 239000011343 solid material Substances 0.000 title claims description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 102
- 229910052710 silicon Inorganic materials 0.000 claims description 101
- 239000010703 silicon Substances 0.000 claims description 101
- 239000003795 chemical substances by application Substances 0.000 claims description 91
- 239000012535 impurity Substances 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 71
- 238000000746 purification Methods 0.000 claims description 41
- 238000002844 melting Methods 0.000 claims description 39
- 230000008018 melting Effects 0.000 claims description 38
- 239000000126 substance Substances 0.000 claims description 29
- 239000007787 solid Substances 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 21
- 239000011734 sodium Substances 0.000 claims description 20
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 19
- 229910052708 sodium Inorganic materials 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 239000011575 calcium Substances 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 12
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 11
- 229910052791 calcium Inorganic materials 0.000 claims description 11
- -1 carbon halogen Chemical class 0.000 claims description 11
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 10
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 10
- 238000009835 boiling Methods 0.000 claims description 10
- 238000010828 elution Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 10
- 229910052700 potassium Inorganic materials 0.000 claims description 10
- 239000011591 potassium Substances 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- 229910052788 barium Inorganic materials 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000013014 purified material Substances 0.000 claims description 4
- 239000012629 purifying agent Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 4
- 150000004760 silicates Chemical class 0.000 claims 3
- YSZKOFNTXPLTCU-UHFFFAOYSA-N barium lithium Chemical compound [Li].[Ba] YSZKOFNTXPLTCU-UHFFFAOYSA-N 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 241000212342 Sium Species 0.000 claims 1
- ZQSASQNWVFRZLQ-UHFFFAOYSA-N [Se].[In].[Cu].[Si] Chemical compound [Se].[In].[Cu].[Si] ZQSASQNWVFRZLQ-UHFFFAOYSA-N 0.000 claims 1
- VAWSWDPVUFTPQO-UHFFFAOYSA-N calcium strontium Chemical compound [Ca].[Sr] VAWSWDPVUFTPQO-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 238000010298 pulverizing process Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 159000000000 sodium salts Chemical group 0.000 claims 1
- 241000894007 species Species 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 26
- 239000002893 slag Substances 0.000 description 16
- 235000013024 sodium fluoride Nutrition 0.000 description 13
- 239000011775 sodium fluoride Substances 0.000 description 13
- 239000007788 liquid Substances 0.000 description 9
- 238000007711 solidification Methods 0.000 description 9
- 230000008023 solidification Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 238000009472 formulation Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000012768 molten material Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910052752 metalloid Inorganic materials 0.000 description 3
- 150000002738 metalloids Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 3
- 241000257465 Echinoidea Species 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 101100313923 Arabidopsis thaliana TIP1-2 gene Proteins 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 239000004129 EU approved improving agent Substances 0.000 description 1
- 229910000519 Ferrosilicon Inorganic materials 0.000 description 1
- 229910005534 GaO2 Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 101100099674 Oryza sativa subsp. japonica TIP2 gene Proteins 0.000 description 1
- 101100313935 Oryza sativa subsp. japonica TIP2-1 gene Proteins 0.000 description 1
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 description 1
- 229910052915 alkaline earth metal silicate Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- FZGIHSNZYGFUGM-UHFFFAOYSA-L iron(ii) fluoride Chemical compound [F-].[F-].[Fe+2] FZGIHSNZYGFUGM-UHFFFAOYSA-L 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 235000012245 magnesium oxide Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical class [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000003758 nuclear fuel Substances 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical compound C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002760 rocket fuel Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- KOECRLKKXSXCPB-UHFFFAOYSA-K triiodobismuthane Chemical compound I[Bi](I)I KOECRLKKXSXCPB-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/14—Refining in the solid state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S423/00—Chemistry of inorganic compounds
- Y10S423/09—Reaction techniques
- Y10S423/12—Molten media
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/711,584 US4612179A (en) | 1985-03-13 | 1985-03-13 | Process for purification of solid silicon |
| US711584 | 1985-03-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62502319A true JPS62502319A (ja) | 1987-09-10 |
Family
ID=24858666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61502717A Pending JPS62502319A (ja) | 1985-03-13 | 1986-03-07 | 固体材料の精製方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US4612179A (enExample) |
| EP (1) | EP0215121B1 (enExample) |
| JP (1) | JPS62502319A (enExample) |
| AU (1) | AU590311B2 (enExample) |
| DE (1) | DE3690134T1 (enExample) |
| GB (1) | GB2179644B (enExample) |
| NL (1) | NL8620174A (enExample) |
| WO (1) | WO1986005475A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997003922A1 (en) * | 1994-01-10 | 1997-02-06 | Showa Aluminum Corporation | Process for producing high-purity silicon |
| CN1083396C (zh) * | 1995-07-14 | 2002-04-24 | 昭和电工株式会社 | 高纯度硅的制造方法 |
| WO2011001919A1 (ja) | 2009-07-03 | 2011-01-06 | 三菱化学株式会社 | シリコンの製造方法、シリコンおよび太陽電池用パネル |
| JP2011513591A (ja) * | 2008-03-05 | 2011-04-28 | エスアールアイ インターナショナル | シリコン太陽電池用基板およびその作製方法 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4612179A (en) * | 1985-03-13 | 1986-09-16 | Sri International | Process for purification of solid silicon |
| NO165288C (no) * | 1988-12-08 | 1991-01-23 | Elkem As | Silisiumpulver og fremgangsmaate for fremstilling av silisiumpulver. |
| US5208001A (en) * | 1991-06-20 | 1993-05-04 | Texas Instruments Incorporated | Method for silicon purification |
| US5346563A (en) * | 1991-11-25 | 1994-09-13 | United Technologies Corporation | Method for removing sulfur from superalloy articles to improve their oxidation resistance |
| NO174165C (no) * | 1992-01-08 | 1994-03-23 | Elkem Aluminium | Fremgangsmåte ved kornforfining av aluminium samt kornforfiningslegering for utförelse av fremgangsmåten |
| NO180532C (no) * | 1994-09-01 | 1997-05-07 | Elkem Materials | Fremgangsmåte for fjerning av forurensninger fra smeltet silisium |
| JP3823160B2 (ja) * | 1997-04-03 | 2006-09-20 | 野村マイクロ・サイエンス株式会社 | 半導体基板内部の洗浄方法 |
| US6790419B1 (en) * | 1999-06-11 | 2004-09-14 | Honeywell Intellectual Properties Inc. | Purification of gaseous inorganic halide |
| NO313132B1 (no) * | 1999-12-08 | 2002-08-19 | Elkem Materials | Fremgangsmåte for rensing av silisium |
| US20050139148A1 (en) * | 2002-02-04 | 2005-06-30 | Hiroyasu Fujiwara | Silicon purifying method, slag for purifying silicon and purified silicon |
| US8021483B2 (en) | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| WO2004029332A2 (en) * | 2002-09-25 | 2004-04-08 | Qinetiq Limited | Purification of electrochemically deoxidised refractory metal particles by heat processing |
| WO2005061383A1 (en) * | 2003-12-04 | 2005-07-07 | Dow Corning Corporation | Method of removing impurities from metallurgical grade silicon to produce solar grade silicon |
| NO333319B1 (no) * | 2003-12-29 | 2013-05-06 | Elkem As | Silisiummateriale for fremstilling av solceller |
| TW200704587A (en) * | 2005-06-29 | 2007-02-01 | Sumitomo Chemical Co | Method for producing silicon with high purity |
| BRPI0710313A2 (pt) * | 2006-04-04 | 2011-08-09 | 6N Silicon Inc | método para a purificação de silìcio |
| US7780938B2 (en) * | 2006-04-13 | 2010-08-24 | Cabot Corporation | Production of silicon through a closed-loop process |
| US7682585B2 (en) * | 2006-04-25 | 2010-03-23 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Silicon refining process |
| US7959707B2 (en) * | 2006-04-28 | 2011-06-14 | Sri International | Methods for producing consolidated materials |
| CN100449791C (zh) * | 2006-05-26 | 2009-01-07 | 华东师范大学 | 化合物半导体层的制作方法及使用该半导体层的太阳能电池及其制作方法 |
| CN101085678B (zh) * | 2006-06-09 | 2010-11-10 | 贵阳宝源阳光硅业有限公司 | 太阳能级硅的制备方法 |
| EP2058279A4 (en) * | 2006-08-31 | 2012-01-25 | Mitsubishi Materials Corp | METALLIC SILICON AND MANUFACTURING METHOD THEREFOR |
| GB0623290D0 (en) * | 2006-11-22 | 2007-01-03 | Qinetiq Nanomaterials Ltd | Purification method |
| CA2689603A1 (en) * | 2007-06-08 | 2008-12-11 | Shin-Etsu Chemical Co., Ltd. | Method of solidifying metallic silicon |
| US8480991B2 (en) * | 2007-07-23 | 2013-07-09 | Silicor Materials Inc. | Use of acid washing to provide purified silicon crystals |
| US7572425B2 (en) * | 2007-09-14 | 2009-08-11 | General Electric Company | System and method for producing solar grade silicon |
| TWI443237B (zh) | 2007-10-03 | 2014-07-01 | Silicor Materials Inc | 加工矽粉以獲得矽結晶之方法 |
| GB0818414D0 (en) * | 2008-10-08 | 2008-11-12 | Intrinsiq Materials Ltd | Nanoparticle purification |
| US8475540B2 (en) * | 2009-08-12 | 2013-07-02 | Sri International | Multi-stage system for reaction and melt coalescence and separation |
| IT1395395B1 (it) * | 2009-09-07 | 2012-09-14 | Estelux S R L | Processo di purificazione del silicio |
| NO331026B1 (no) * | 2009-09-23 | 2011-09-12 | Elkem Solar As | Fremgangsmate for fremstilling av hoyrent silisium |
| CN101792143B (zh) * | 2010-03-24 | 2011-12-21 | 姜学昭 | 提纯硅的方法 |
| DE112014005310B4 (de) * | 2013-11-21 | 2022-11-24 | Kennametal Inc. | Verfahren für die Aufbereitung von Wolframcarbidzusammensetzungen |
| MX373709B (es) * | 2015-01-30 | 2020-05-08 | Advanced Accelerator Applications Int S A | Proceso para la purificacion de ga-68 a partir del eluato que se deriva de generadores de 68ge/ 68ga y columnas cromatograficas para usarse en dicho proceso. |
| RU2702173C1 (ru) * | 2018-12-25 | 2019-10-04 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" | Способ повышения эффективности очистки кремния |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3148131A (en) * | 1960-04-01 | 1964-09-08 | Pechiney Prod Chimiques Sa | Process for the purification of silicon |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE575687A (enExample) * | ||||
| US1037713A (en) * | 1911-06-26 | 1912-09-03 | Carborundum Co | Method of making silicon articles. |
| US1180968A (en) * | 1912-09-18 | 1916-04-25 | Carborundum Co | Process for purifying silicon. |
| US1386227A (en) * | 1919-09-26 | 1921-08-02 | Electro Metallurg Co | Process of refining crude electric-furnace silicon |
| US1518872A (en) * | 1920-04-16 | 1924-12-09 | Pacz Aladar | Process of producing fluorides |
| GB358531A (en) * | 1930-04-08 | 1931-10-08 | Fansteel Prod Co Inc | Process for removing carbon impurities from refractory rare metals, particularly tantalum |
| DE849904C (de) * | 1949-04-15 | 1952-09-18 | Electric Furnace Products Comp | Verfahren zur Entschwefelung von Metallen und Legierungen |
| FR1071286A (fr) * | 1952-12-09 | 1954-08-30 | Chromium Mining & Smelting Cor | Perfectionnements relatifs aux procédés de récupération des métaux |
| US2904427A (en) * | 1955-12-21 | 1959-09-15 | Du Pont | Production of refractory metals |
| GB841765A (en) * | 1955-12-21 | 1960-07-20 | Du Pont | Improvements in or relating to the manufacture of pure refractory metals |
| FR1170557A (fr) * | 1957-04-02 | 1959-01-15 | Nat D Etudes & De Rech S Aeron | Perfectionnements apportés aux procédés pour l'élaboration de matériaux contenant du chrome et aux matériaux obtenus par ces procédés |
| GB913198A (en) * | 1957-12-23 | 1962-12-19 | Sampei Katakura | A process for reducing the amount of impurities present in iron |
| FR1230158A (fr) * | 1958-07-03 | 1960-09-14 | Wacker Chemie Gmbh | Procédé de purification du silicium |
| FR74172E (fr) * | 1958-09-12 | 1960-11-07 | Onera (Off Nat Aerospatiale) | Perfectionnements apportés aux procédés pour l'élaboration de matériaux contenant du chrome et aux matériaux obtenus par ces procédés |
| FR1461308A (fr) * | 1959-11-12 | 1966-02-25 | Electrometallurgique De Montri | Procédé pour l'affinage des métaux, des métalloïdes et des alliages |
| GB1001459A (en) * | 1962-11-30 | 1965-08-18 | Sherritt Gordon Mines Ltd | Process for desulphurizing non-ferrous metal and metal alloy particles |
| GB1064795A (en) * | 1964-06-18 | 1967-04-12 | Bendix Corp | Method of purifying metal |
| CA1003223A (en) * | 1973-10-03 | 1977-01-11 | John C. Terry | Reduction of metallic chloride by powdered metal |
| US3933981A (en) * | 1973-11-30 | 1976-01-20 | Texas Instruments Incorporated | Tin-lead purification of silicon |
| US4172883A (en) * | 1978-06-23 | 1979-10-30 | Nasa | Method of purifying metallurgical grade silicon employing reduced presure atmospheric control |
| US4462806A (en) * | 1980-04-07 | 1984-07-31 | Phrasor Scientific, Inc. | High field surface ionization process and apparatus for purifying metal and semiconductor materials |
| CA1147698A (en) * | 1980-10-15 | 1983-06-07 | Maher I. Boulos | Purification of metallurgical grade silicon |
| US4388286A (en) * | 1982-01-27 | 1983-06-14 | Atlantic Richfield Company | Silicon purification |
| US4487637A (en) * | 1983-10-14 | 1984-12-11 | Cornell Research Foundation, Inc. | Purification of niobium |
| US4612179A (en) * | 1985-03-13 | 1986-09-16 | Sri International | Process for purification of solid silicon |
-
1985
- 1985-03-13 US US06/711,584 patent/US4612179A/en not_active Expired - Fee Related
-
1986
- 1986-03-07 US US07/009,326 patent/US4828814A/en not_active Expired - Fee Related
- 1986-03-07 EP EP86902962A patent/EP0215121B1/en not_active Expired
- 1986-03-07 WO PCT/US1986/000499 patent/WO1986005475A1/en not_active Ceased
- 1986-03-07 JP JP61502717A patent/JPS62502319A/ja active Pending
- 1986-03-07 GB GB8624297A patent/GB2179644B/en not_active Expired
- 1986-03-07 NL NL8620174A patent/NL8620174A/nl unknown
- 1986-03-07 DE DE19863690134 patent/DE3690134T1/de not_active Ceased
- 1986-08-06 AU AU60918/86A patent/AU590311B2/en not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3148131A (en) * | 1960-04-01 | 1964-09-08 | Pechiney Prod Chimiques Sa | Process for the purification of silicon |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997003922A1 (en) * | 1994-01-10 | 1997-02-06 | Showa Aluminum Corporation | Process for producing high-purity silicon |
| CN1083396C (zh) * | 1995-07-14 | 2002-04-24 | 昭和电工株式会社 | 高纯度硅的制造方法 |
| JP2011513591A (ja) * | 2008-03-05 | 2011-04-28 | エスアールアイ インターナショナル | シリコン太陽電池用基板およびその作製方法 |
| WO2011001919A1 (ja) | 2009-07-03 | 2011-01-06 | 三菱化学株式会社 | シリコンの製造方法、シリコンおよび太陽電池用パネル |
| US9567227B2 (en) | 2009-07-03 | 2017-02-14 | Mitsubishi Chemical Corporation | Process for producing silicon, silicon, and panel for solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2179644A (en) | 1987-03-11 |
| US4828814A (en) | 1989-05-09 |
| US4612179A (en) | 1986-09-16 |
| AU590311B2 (en) | 1989-11-02 |
| AU6091886A (en) | 1988-02-11 |
| EP0215121B1 (en) | 1991-07-03 |
| DE3690134T1 (enExample) | 1987-03-12 |
| GB2179644B (en) | 1989-12-20 |
| WO1986005475A1 (en) | 1986-09-25 |
| EP0215121A1 (en) | 1987-03-25 |
| NL8620174A (nl) | 1987-02-02 |
| GB8624297D0 (en) | 1986-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62502319A (ja) | 固体材料の精製方法 | |
| CA1133681A (en) | Process for purifying silicon, and the silicon so produced | |
| US20220274837A1 (en) | Refining Process for Producing Solar Silicon, Silicon Carbide, High-Purity Graphite, and Hollow Silica Microspheres | |
| WO2011022817A1 (en) | Production of high purity silicon from amorphous silica | |
| CA1194679A (en) | Semicontinuous process for the production of pure silicon | |
| EP3554998B1 (en) | Process for the production of commercial grade silicon | |
| Hosseinpour et al. | Phosphorus removal from Si-Fe alloy using SiO2-Al2O3-CaO slag | |
| US4446120A (en) | Method of preparing silicon from sodium fluosilicate | |
| US4781756A (en) | Removal of lithium nitride from lithium metal | |
| EP3565782A1 (en) | Refining process for producing solar silicon, silicon carbide, high-purity graphite and hollow silica microspheres | |
| US3257199A (en) | Thermal reduction | |
| JP2905353B2 (ja) | 金属シリコンの精製方法 | |
| WO2006041271A1 (en) | Method of production of pure silicon | |
| US3154408A (en) | Uranium recovery from ore concentrates | |
| JPH06322455A (ja) | 金属アンチモンの製造方法 | |
| US3685985A (en) | Method for the removal of impurities from metallic zinc | |
| US3056658A (en) | Process for producing molybdenum disilicide | |
| CA1289333C (en) | Process for purification of solid material | |
| Mukashev et al. | Development of a technology of silicon production by recycling phosphorous industry wastes | |
| JPS6332725B2 (enExample) | ||
| RU2764670C9 (ru) | Способ получения технического кремния (варианты) | |
| JPS6357738A (ja) | 高純度リン鉄の製造方法 | |
| JP2683397B2 (ja) | ＳｉＣウィスカーの製造方法 | |
| JPS61500222A (ja) | ガススパ−ジングにより溶融タングステン酸塩−ハロゲン化物相から一炭化タングステンを製造する方法 | |
| Maier | Preparation of elemental Si from SiO2 |