NL8620174A - Werkwijze voor de zuivering van vaste stof. - Google Patents
Werkwijze voor de zuivering van vaste stof. Download PDFInfo
- Publication number
- NL8620174A NL8620174A NL8620174A NL8620174A NL8620174A NL 8620174 A NL8620174 A NL 8620174A NL 8620174 A NL8620174 A NL 8620174A NL 8620174 A NL8620174 A NL 8620174A NL 8620174 A NL8620174 A NL 8620174A
- Authority
- NL
- Netherlands
- Prior art keywords
- solid
- silicon
- purifying agent
- purified
- purification
- Prior art date
Links
- 239000007787 solid Substances 0.000 title claims description 114
- 238000000034 method Methods 0.000 title claims description 84
- 238000000746 purification Methods 0.000 title claims description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 111
- 229910052710 silicon Inorganic materials 0.000 claims description 110
- 239000010703 silicon Substances 0.000 claims description 110
- 239000012629 purifying agent Substances 0.000 claims description 75
- 239000000126 substance Substances 0.000 claims description 70
- 239000012535 impurity Substances 0.000 claims description 49
- 238000002844 melting Methods 0.000 claims description 39
- 230000008018 melting Effects 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000011734 sodium Substances 0.000 claims description 22
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 20
- 229910052708 sodium Inorganic materials 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 18
- 239000000356 contaminant Substances 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 15
- 239000011777 magnesium Substances 0.000 claims description 15
- 239000011575 calcium Substances 0.000 claims description 13
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 12
- 229910052791 calcium Inorganic materials 0.000 claims description 12
- 229910052749 magnesium Inorganic materials 0.000 claims description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 11
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 11
- 229910052700 potassium Inorganic materials 0.000 claims description 11
- 239000011591 potassium Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052788 barium Inorganic materials 0.000 claims description 10
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 10
- 238000009835 boiling Methods 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 10
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 150000004820 halides Chemical class 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000003599 detergent Substances 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000002316 fumigant Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000011343 solid material Substances 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 150000004760 silicates Chemical class 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 claims 1
- 235000011613 Pinus brutia Nutrition 0.000 claims 1
- 241000018646 Pinus brutia Species 0.000 claims 1
- 150000001805 chlorine compounds Chemical class 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 159000000000 sodium salts Chemical group 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 34
- 239000002893 slag Substances 0.000 description 18
- 235000013024 sodium fluoride Nutrition 0.000 description 17
- 239000011775 sodium fluoride Substances 0.000 description 17
- 239000007788 liquid Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000007711 solidification Methods 0.000 description 7
- 230000008023 solidification Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 241000237858 Gastropoda Species 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002386 leaching Methods 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000012768 molten material Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910052752 metalloid Inorganic materials 0.000 description 3
- 150000002738 metalloids Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910010347 TiF2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- YOBCTIIWHLYFII-UHFFFAOYSA-L difluorotitanium Chemical compound F[Ti]F YOBCTIIWHLYFII-UHFFFAOYSA-L 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- -1 magnesium fluorosilicate Chemical compound 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical class [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 1
- FZGIHSNZYGFUGM-UHFFFAOYSA-L iron(ii) fluoride Chemical compound [F-].[F-].[Fe+2] FZGIHSNZYGFUGM-UHFFFAOYSA-L 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003758 nuclear fuel Substances 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical compound C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000013014 purified material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000002760 rocket fuel Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/14—Refining in the solid state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S423/00—Chemistry of inorganic compounds
- Y10S423/09—Reaction techniques
- Y10S423/12—Molten media
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/711,584 US4612179A (en) | 1985-03-13 | 1985-03-13 | Process for purification of solid silicon |
| US71158485 | 1985-03-13 | ||
| PCT/US1986/000499 WO1986005475A1 (en) | 1985-03-13 | 1986-03-07 | Process for purification of solid material |
| US8600499 | 1986-03-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8620174A true NL8620174A (nl) | 1987-02-02 |
Family
ID=24858666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8620174A NL8620174A (nl) | 1985-03-13 | 1986-03-07 | Werkwijze voor de zuivering van vaste stof. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US4612179A (enExample) |
| EP (1) | EP0215121B1 (enExample) |
| JP (1) | JPS62502319A (enExample) |
| AU (1) | AU590311B2 (enExample) |
| DE (1) | DE3690134T1 (enExample) |
| GB (1) | GB2179644B (enExample) |
| NL (1) | NL8620174A (enExample) |
| WO (1) | WO1986005475A1 (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4612179A (en) * | 1985-03-13 | 1986-09-16 | Sri International | Process for purification of solid silicon |
| NO165288C (no) * | 1988-12-08 | 1991-01-23 | Elkem As | Silisiumpulver og fremgangsmaate for fremstilling av silisiumpulver. |
| US5208001A (en) * | 1991-06-20 | 1993-05-04 | Texas Instruments Incorporated | Method for silicon purification |
| US5346563A (en) * | 1991-11-25 | 1994-09-13 | United Technologies Corporation | Method for removing sulfur from superalloy articles to improve their oxidation resistance |
| NO174165C (no) * | 1992-01-08 | 1994-03-23 | Elkem Aluminium | Fremgangsmåte ved kornforfining av aluminium samt kornforfiningslegering for utförelse av fremgangsmåten |
| WO1997003922A1 (en) * | 1994-01-10 | 1997-02-06 | Showa Aluminum Corporation | Process for producing high-purity silicon |
| NO180532C (no) * | 1994-09-01 | 1997-05-07 | Elkem Materials | Fremgangsmåte for fjerning av forurensninger fra smeltet silisium |
| CN1083396C (zh) * | 1995-07-14 | 2002-04-24 | 昭和电工株式会社 | 高纯度硅的制造方法 |
| JP3823160B2 (ja) * | 1997-04-03 | 2006-09-20 | 野村マイクロ・サイエンス株式会社 | 半導体基板内部の洗浄方法 |
| US6790419B1 (en) * | 1999-06-11 | 2004-09-14 | Honeywell Intellectual Properties Inc. | Purification of gaseous inorganic halide |
| NO313132B1 (no) * | 1999-12-08 | 2002-08-19 | Elkem Materials | Fremgangsmåte for rensing av silisium |
| JP4159994B2 (ja) * | 2002-02-04 | 2008-10-01 | シャープ株式会社 | シリコンの精製方法、シリコン精製用スラグおよび精製されたシリコン |
| US8021483B2 (en) | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| US20060130610A1 (en) * | 2002-09-25 | 2006-06-22 | Ward-Close Charles M | Purification process |
| CN100457615C (zh) * | 2003-12-04 | 2009-02-04 | 陶氏康宁公司 | 从冶金级硅中去除杂质以制得太阳能级硅的方法 |
| NO333319B1 (no) * | 2003-12-29 | 2013-05-06 | Elkem As | Silisiummateriale for fremstilling av solceller |
| TW200704587A (en) * | 2005-06-29 | 2007-02-01 | Sumitomo Chemical Co | Method for producing silicon with high purity |
| EP2024285B1 (en) * | 2006-04-04 | 2014-06-11 | Silicor Materials Inc. | Method for purifying silicon |
| CN101460398B (zh) * | 2006-04-13 | 2012-08-29 | 卡伯特公司 | 通过闭合环路方法生产硅 |
| US7682585B2 (en) * | 2006-04-25 | 2010-03-23 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Silicon refining process |
| CN101432453B (zh) * | 2006-04-28 | 2011-12-28 | Sri国际公司 | 用于生产固结的和纯化的材料的方法 |
| CN100449791C (zh) * | 2006-05-26 | 2009-01-07 | 华东师范大学 | 化合物半导体层的制作方法及使用该半导体层的太阳能电池及其制作方法 |
| CN101085678B (zh) * | 2006-06-09 | 2010-11-10 | 贵阳宝源阳光硅业有限公司 | 太阳能级硅的制备方法 |
| WO2008026728A1 (en) * | 2006-08-31 | 2008-03-06 | Mitsubishi Materials Corporation | Metallic silicon and process for producing the same |
| GB0623290D0 (en) * | 2006-11-22 | 2007-01-03 | Qinetiq Nanomaterials Ltd | Purification method |
| KR20100022516A (ko) * | 2007-06-08 | 2010-03-02 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 금속 규소의 응고 방법 |
| JP5562846B2 (ja) * | 2007-07-23 | 2014-07-30 | シリコア マテリアルズ インコーポレイテッド | 精製シリコン結晶を提供する酸洗使用 |
| US7572425B2 (en) * | 2007-09-14 | 2009-08-11 | General Electric Company | System and method for producing solar grade silicon |
| EP2198077B1 (en) | 2007-10-03 | 2017-05-17 | Silicor Materials Inc. | Method for processing silicon powder to obtain silicon crystals |
| WO2009111575A2 (en) * | 2008-03-05 | 2009-09-11 | Sri International | Substrates for silicon solar cells and methods of producing the same |
| GB0818414D0 (en) * | 2008-10-08 | 2008-11-12 | Intrinsiq Materials Ltd | Nanoparticle purification |
| KR20120031159A (ko) | 2009-07-03 | 2012-03-30 | 미쓰비시 가가꾸 가부시키가이샤 | 실리콘의 제조 방법, 실리콘 및 태양 전지용 패널 |
| US8475540B2 (en) * | 2009-08-12 | 2013-07-02 | Sri International | Multi-stage system for reaction and melt coalescence and separation |
| IT1395395B1 (it) * | 2009-09-07 | 2012-09-14 | Estelux S R L | Processo di purificazione del silicio |
| NO331026B1 (no) * | 2009-09-23 | 2011-09-12 | Elkem Solar As | Fremgangsmate for fremstilling av hoyrent silisium |
| CN101792143B (zh) * | 2010-03-24 | 2011-12-21 | 姜学昭 | 提纯硅的方法 |
| AT520723B1 (de) | 2013-11-21 | 2019-07-15 | Kennametal Inc | Aufbereitung von Wolframcarbidzusammensetzungen |
| CA2974415C (en) * | 2015-01-30 | 2023-07-04 | Lorenza Fugazza | Process for the purification of ga-68 from eluate deriving from 68ge/68ga generators and chromatographic columns for use in said process |
| RU2702173C1 (ru) * | 2018-12-25 | 2019-10-04 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" | Способ повышения эффективности очистки кремния |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE575687A (enExample) * | ||||
| US1037713A (en) * | 1911-06-26 | 1912-09-03 | Carborundum Co | Method of making silicon articles. |
| US1180968A (en) * | 1912-09-18 | 1916-04-25 | Carborundum Co | Process for purifying silicon. |
| US1386227A (en) * | 1919-09-26 | 1921-08-02 | Electro Metallurg Co | Process of refining crude electric-furnace silicon |
| US1518872A (en) * | 1920-04-16 | 1924-12-09 | Pacz Aladar | Process of producing fluorides |
| GB358531A (en) * | 1930-04-08 | 1931-10-08 | Fansteel Prod Co Inc | Process for removing carbon impurities from refractory rare metals, particularly tantalum |
| DE849904C (de) * | 1949-04-15 | 1952-09-18 | Electric Furnace Products Comp | Verfahren zur Entschwefelung von Metallen und Legierungen |
| FR1071286A (fr) * | 1952-12-09 | 1954-08-30 | Chromium Mining & Smelting Cor | Perfectionnements relatifs aux procédés de récupération des métaux |
| US2904427A (en) * | 1955-12-21 | 1959-09-15 | Du Pont | Production of refractory metals |
| GB841765A (en) * | 1955-12-21 | 1960-07-20 | Du Pont | Improvements in or relating to the manufacture of pure refractory metals |
| FR1170557A (fr) * | 1957-04-02 | 1959-01-15 | Nat D Etudes & De Rech S Aeron | Perfectionnements apportés aux procédés pour l'élaboration de matériaux contenant du chrome et aux matériaux obtenus par ces procédés |
| GB913198A (en) * | 1957-12-23 | 1962-12-19 | Sampei Katakura | A process for reducing the amount of impurities present in iron |
| FR1230158A (fr) * | 1958-07-03 | 1960-09-14 | Wacker Chemie Gmbh | Procédé de purification du silicium |
| FR74172E (fr) * | 1958-09-12 | 1960-11-07 | Onera (Off Nat Aerospatiale) | Perfectionnements apportés aux procédés pour l'élaboration de matériaux contenant du chrome et aux matériaux obtenus par ces procédés |
| FR1461308A (fr) * | 1959-11-12 | 1966-02-25 | Electrometallurgique De Montri | Procédé pour l'affinage des métaux, des métalloïdes et des alliages |
| LU39963A1 (enExample) * | 1960-04-01 | |||
| GB1001459A (en) * | 1962-11-30 | 1965-08-18 | Sherritt Gordon Mines Ltd | Process for desulphurizing non-ferrous metal and metal alloy particles |
| GB1064795A (en) * | 1964-06-18 | 1967-04-12 | Bendix Corp | Method of purifying metal |
| CA1003223A (en) * | 1973-10-03 | 1977-01-11 | John C. Terry | Reduction of metallic chloride by powdered metal |
| US3933981A (en) * | 1973-11-30 | 1976-01-20 | Texas Instruments Incorporated | Tin-lead purification of silicon |
| US4172883A (en) * | 1978-06-23 | 1979-10-30 | Nasa | Method of purifying metallurgical grade silicon employing reduced presure atmospheric control |
| US4462806A (en) * | 1980-04-07 | 1984-07-31 | Phrasor Scientific, Inc. | High field surface ionization process and apparatus for purifying metal and semiconductor materials |
| CA1147698A (en) * | 1980-10-15 | 1983-06-07 | Maher I. Boulos | Purification of metallurgical grade silicon |
| US4388286A (en) * | 1982-01-27 | 1983-06-14 | Atlantic Richfield Company | Silicon purification |
| US4487637A (en) * | 1983-10-14 | 1984-12-11 | Cornell Research Foundation, Inc. | Purification of niobium |
| US4612179A (en) * | 1985-03-13 | 1986-09-16 | Sri International | Process for purification of solid silicon |
-
1985
- 1985-03-13 US US06/711,584 patent/US4612179A/en not_active Expired - Fee Related
-
1986
- 1986-03-07 JP JP61502717A patent/JPS62502319A/ja active Pending
- 1986-03-07 EP EP86902962A patent/EP0215121B1/en not_active Expired
- 1986-03-07 WO PCT/US1986/000499 patent/WO1986005475A1/en not_active Ceased
- 1986-03-07 US US07/009,326 patent/US4828814A/en not_active Expired - Fee Related
- 1986-03-07 NL NL8620174A patent/NL8620174A/nl unknown
- 1986-03-07 GB GB8624297A patent/GB2179644B/en not_active Expired
- 1986-03-07 DE DE19863690134 patent/DE3690134T1/de not_active Ceased
- 1986-08-06 AU AU60918/86A patent/AU590311B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US4828814A (en) | 1989-05-09 |
| EP0215121B1 (en) | 1991-07-03 |
| DE3690134T1 (enExample) | 1987-03-12 |
| WO1986005475A1 (en) | 1986-09-25 |
| US4612179A (en) | 1986-09-16 |
| GB2179644B (en) | 1989-12-20 |
| AU590311B2 (en) | 1989-11-02 |
| EP0215121A1 (en) | 1987-03-25 |
| GB2179644A (en) | 1987-03-11 |
| GB8624297D0 (en) | 1986-11-12 |
| JPS62502319A (ja) | 1987-09-10 |
| AU6091886A (en) | 1988-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL8620174A (nl) | Werkwijze voor de zuivering van vaste stof. | |
| CN101855391A (zh) | 用于处理硅粉末来获得硅晶体的方法 | |
| JPH0755814B2 (ja) | 連続珪素精製法 | |
| US3053650A (en) | Process for recovering uranium values | |
| US4194904A (en) | Production of purified lead and antimony oxide | |
| JP3103507B2 (ja) | 不純ダイヤモンド粉末の精製法 | |
| AU672840B2 (en) | Analytical method for nonmetallic contaminants in silicon | |
| WO2021014946A1 (ja) | Ｐｇｍの回収方法 | |
| CA2380830C (en) | Recovery of elemental phosphorus from phosphorus sludge | |
| JP2015529741A (ja) | アルミニウムを精製するための方法およびシリコンを精製するための精製アルミニウムの使用 | |
| US3148977A (en) | Method of purifying uranium metal | |
| US3892562A (en) | Process for producing high purity silver | |
| NO171968B (no) | Fremgangsmaate for fraskillelse av forurensninger fra silisium | |
| JPH0813690B2 (ja) | カルコゲナイドガラス原料の精製方法 | |
| US2844462A (en) | Recovery of zinc | |
| Taposhe et al. | Boron and Phosphorus Removal from Silicon: A Hybrid Solvent–Slag Refining Approach | |
| JP2512961B2 (ja) | セレン中のテルルの除去方法 | |
| US3104166A (en) | Production and separation of molten cerium from its reducing metal chloride which is in solid form | |
| JP2531695B2 (ja) | 有価物質の回収方法 | |
| Hughes | Preparation of high purity lead | |
| EP0387337A1 (en) | Process for producing high purity magnesium | |
| JP2007270308A (ja) | アンチモン及びその精製方法 | |
| US3148976A (en) | Processing impure uranium | |
| RU2169201C1 (ru) | Шихта для получения сплава благородных металлов | |
| Shamsuddin | Refining |