JPS6250004B2 - - Google Patents

Info

Publication number
JPS6250004B2
JPS6250004B2 JP13580080A JP13580080A JPS6250004B2 JP S6250004 B2 JPS6250004 B2 JP S6250004B2 JP 13580080 A JP13580080 A JP 13580080A JP 13580080 A JP13580080 A JP 13580080A JP S6250004 B2 JPS6250004 B2 JP S6250004B2
Authority
JP
Japan
Prior art keywords
position detection
piezoelectric substrate
input
bonding
long side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13580080A
Other languages
Japanese (ja)
Other versions
JPS5762614A (en
Inventor
Kazuhisa Yabukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP13580080A priority Critical patent/JPS5762614A/en
Publication of JPS5762614A publication Critical patent/JPS5762614A/en
Publication of JPS6250004B2 publication Critical patent/JPS6250004B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves

Description

【発明の詳細な説明】 本発明はワイヤボンデイングを自動化するとき
ボンデイングパツドの位置検出が誤まりなく検出
し得るように改良された弾性表面波素子に関す
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improved surface acoustic wave device that can accurately detect the position of a bonding pad when automating wire bonding.

弾性表面波素子はLiTaO3などの圧電性のウエ
ハに所定の入力電極、出力電極等のパターンを形
成し、所定ダイシングラインに沿つて切断して
個々のペレツトを得、しかるのち各ペレツトをス
テムに接着剤にて固定し、所定の電極端子をステ
ムのリードピンに接続して、その後シエルをステ
ムに気密封着してなる。
Surface acoustic wave devices are made by forming a predetermined pattern of input electrodes, output electrodes, etc. on a piezoelectric wafer such as LiTaO 3 , cutting it along predetermined dicing lines to obtain individual pellets, and then forming each pellet into a stem. The shell is fixed with adhesive, predetermined electrode terminals are connected to lead pins of the stem, and then the shell is hermetically sealed to the stem.

さて、上述のペレツトは第1図に示すように、
圧電基板1上にブスバー2によつて連結されたす
だれ状の入力電極3及び出力電極4、シールド電
極5及び入・出力電極と接続されたボンデイング
パツド6,7,8,9が形成されている。更に圧
電基板1上には、ステムのリードピンとボンデイ
ングパツドとの結線を自動化する際、ボンデイン
グパツドの位置決めを行うための位置検出パツド
10,11が設けられている。尚図中12は吸音
剤である。
Now, as shown in Figure 1, the pellets mentioned above are
On a piezoelectric substrate 1, bonding pads 6, 7, 8, and 9 connected to an input electrode 3 and an output electrode 4 connected by a bus bar 2, a shield electrode 5, and an input/output electrode are formed. There is. Furthermore, position detection pads 10 and 11 are provided on the piezoelectric substrate 1 for positioning the bonding pads when automating the connection between the lead pins of the stem and the bonding pads. In addition, 12 in the figure is a sound absorbing agent.

ところで、ペレツトは前述したようにウエハを
ダイシングして得られるのであるが、ウエハの価
格が高いため各ペレツトの面積をできるだけ小さ
くするようにダイシングラインからブスバーまで
の間隔を極力狭く設定している。従つて、ダイシ
ング時の位置ずれの誤差に対する余裕度が小さ
く、僅かのダイシングミスにより第1図に破線A
で示すようにダイシングされ、位置検出パツド1
0が一部削られることがある。このようなペレツ
トは、弾性表面波素子としての電気的特性に支障
がないにも係わらず、位置検出パツドの形状が所
定の形状でないため、自動ボンデイング装置での
位置検出が正常に行なわれず、不良品として廃棄
せざるを得なかつた。又、このようなペレツトが
ワイヤボンデイング工程へ送られてくると、位置
検出不良によりボンデイング装置が停止したり、
装置の稼動率が低下する問題があつた。
Incidentally, pellets are obtained by dicing wafers as described above, but since wafers are expensive, the distance from the dicing line to the bus bar is set as narrow as possible to minimize the area of each pellet. Therefore, there is little margin for error in positional deviation during dicing, and a slight dicing error may cause the broken line A in FIG.
The position detection pad 1 is diced as shown in
Some 0's may be deleted. Although such pellets do not interfere with the electrical characteristics of a surface acoustic wave element, the shape of the position detection pad is not the prescribed shape, so the position detection by the automatic bonding equipment cannot be performed normally, resulting in failure. The product had no choice but to be discarded as a good product. Additionally, when such pellets are sent to the wire bonding process, the bonding equipment may stop due to position detection failure, or
There was a problem that the operating rate of the equipment decreased.

本発明は上述の問題に鑑みてなされたもので、
位置検出パツドの位置を工夫することにより上述
の問題を解決したものである。すなわち位置検出
パツドの基板長辺側の端縁がブスバーの基板長辺
側の端縁より内側に位置するようにしたものであ
る。
The present invention was made in view of the above-mentioned problems, and
The above-mentioned problem was solved by devising the position of the position detection pad. That is, the edge of the position detection pad on the long side of the board is located inside the edge of the bus bar on the long side of the board.

以下本発明を図面を参照して説明する。第2図
は本発明の弾性表面波素子のペレツトを示し、た
とえばLiTaO3からなる圧電基板20の表面にブ
スバー21a,21bによつて連結されたすだれ
状の出力電極22、出力電極22に対向して設け
られ同様にブスバー23a,23bによつて連結
された入力電極24、入・出力電極間に設けられ
たシールド電極25、各電極と電気的に接続され
たボンデイングパツド26、位置検出パツド2
7,28及び入・出力電極の外側に吸音剤29と
を備えている。位置検出パツド27,28はその
圧電基板の長辺側端縁27a,28bが、ブスバ
ー21a及び23bの圧電基板長辺側の端縁より
も内側に形成されている。これは通常10μm程度
内側に寄せて形成すればよい。
The present invention will be explained below with reference to the drawings. FIG. 2 shows a pellet of the surface acoustic wave device of the present invention, which has a comb-shaped output electrode 22 connected to the surface of a piezoelectric substrate 20 made of, for example, LiTaO 3 by bus bars 21a and 21b, and a pellet facing the output electrode 22. An input electrode 24 provided in the same way and connected by bus bars 23a and 23b, a shield electrode 25 provided between the input and output electrodes, a bonding pad 26 electrically connected to each electrode, and a position detection pad 2.
7, 28 and a sound absorbing material 29 on the outside of the input/output electrodes. The position detection pads 27 and 28 have long side edges 27a and 28b of their piezoelectric substrates formed inside the long side edges of the piezoelectric substrates of the bus bars 21a and 23b. This may normally be formed about 10 μm closer to the inside.

上述のように位置検出パツドが形成されたパタ
ーンを具備したウエハは、ダイシングして各ペレ
ツトに分割するとき、ダイシングミスにより第1
図に示す如くブスバーが削られるようなものがあ
つても、これらのペレツトに形成された位置検出
パツドはその形状が何らそこわれることがない。
したがつてワイヤボンデイング工程に順次おくら
れてくるとき、位置検出パツドが所定の形状を保
つているので、位置検出不良を起こすことがな
く、順調なワイヤボンデイング作業を行なわせる
ことができる。また僅かのダイシングミスである
にも係わらず、従来廃棄されていたようなペレツ
トが良品として使用できるので、製品歩留りも向
上する。
When a wafer with a pattern in which position detection pads are formed as described above is diced and divided into pellets, the first pellet may be damaged due to a dicing error.
As shown in the figure, even if the bus bar is scraped, the shape of the position detection pads formed on these pellets will not be affected in any way.
Therefore, when the wire bonding process is performed one after another, the position detection pad maintains a predetermined shape, so that position detection failure does not occur, and the wire bonding work can be carried out smoothly. In addition, even if there is a slight dicing error, pellets that were conventionally discarded can be used as good products, so the product yield is improved.

上述した実施例では、位置検出パツドをボンデ
イングパツドと個別に設けたが、第3図に示すよ
うに、ボンデイングパツド30,31を位置検出
パツドと兼用してもよい。なお位置検出パツドの
位置・形状は、本発明の要旨に従つて、種々の変
形構造があることはいうまでもない。
In the embodiment described above, the position detection pads were provided separately from the bonding pads, but as shown in FIG. 3, the bonding pads 30 and 31 may also be used as the position detection pads. It goes without saying that the position and shape of the position detection pad may be modified in various ways according to the gist of the present invention.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の弾性表面波素子のペレツトの平
面図、第2図は本発明の弾性表面波素子のペレツ
トの平面図、第3図は本発明の他の実施例に係る
平面図である。 20……圧電基板、21a,21b……ブスバ
ー、22……出力電極、23a,23b……ブス
バー、24……入力電極、26……ボンデイング
パツド、27,28……位置検出パツド。
FIG. 1 is a plan view of a pellet of a conventional surface acoustic wave device, FIG. 2 is a plan view of a pellet of a surface acoustic wave device of the present invention, and FIG. 3 is a plan view of another embodiment of the present invention. . 20... Piezoelectric substrate, 21a, 21b... Bus bar, 22... Output electrode, 23a, 23b... Bus bar, 24... Input electrode, 26... Bonding pad, 27, 28... Position detection pad.

Claims (1)

【特許請求の範囲】[Claims] 1 圧電基板と、この圧電基板上に形成されそれ
ぞれブスバーによつて連結されたすだれ状の入力
及び出力電極と、それぞれ入力及び出力電極に電
気的に接続されたボンデイングパツドと、自動ボ
ンデイング装置のための位置検出パツドとを備
え、前記位置検出パツドの前記圧電基板長辺側の
端縁が前記ブスバーの圧電基板長辺側の端縁より
も内側に位置することを特徴とする弾性表面波素
子。
1. A piezoelectric substrate, interdigital input and output electrodes formed on the piezoelectric substrate and connected by busbars, bonding pads electrically connected to the input and output electrodes, and an automatic bonding device. A surface acoustic wave element comprising: a position detection pad for the piezoelectric substrate, and an edge of the position detection pad on the long side of the piezoelectric substrate is located inside an edge of the bus bar on the long side of the piezoelectric substrate. .
JP13580080A 1980-10-01 1980-10-01 Surface acoustic wave element Granted JPS5762614A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13580080A JPS5762614A (en) 1980-10-01 1980-10-01 Surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13580080A JPS5762614A (en) 1980-10-01 1980-10-01 Surface acoustic wave element

Publications (2)

Publication Number Publication Date
JPS5762614A JPS5762614A (en) 1982-04-15
JPS6250004B2 true JPS6250004B2 (en) 1987-10-22

Family

ID=15160108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13580080A Granted JPS5762614A (en) 1980-10-01 1980-10-01 Surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPS5762614A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0256506U (en) * 1988-10-19 1990-04-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0256506U (en) * 1988-10-19 1990-04-24

Also Published As

Publication number Publication date
JPS5762614A (en) 1982-04-15

Similar Documents

Publication Publication Date Title
US6310421B2 (en) Surface acoustic wave device and method for fabricating the same
JPH0350859A (en) Semiconductor integrated circuit device provided with loc-type lead frame
JPH01503184A (en) integrated circuit device package
JPH05218283A (en) Semiconductor device
JPS5992556A (en) Semiconductor device
JPS6250004B2 (en)
US4604594A (en) Surface wave filter having photoresist damping material thereon and method for manufacturing the same
JPH0514513Y2 (en)
JPH10214933A (en) Semiconductor device and its manufacturing
JPS5412263A (en) Semiconductor element and production of the same
JPH0334854B2 (en)
IE32531B1 (en) Improvements in and relating to contact bonding and lead attachment of an electrical device
JPH026669Y2 (en)
JPS5930538Y2 (en) semiconductor equipment
JP2681959B2 (en) Method for manufacturing semiconductor integrated circuit
JPH0637234A (en) Semiconductor device
JPS63311731A (en) Semiconductor device
JP2655439B2 (en) Surface acoustic wave device
JPS5887839A (en) Semiconductor device
JPH04192421A (en) Semiconductor device
JPS63169746A (en) Semiconductor device
JPH10125709A (en) Semiconductor device
JPS6120409A (en) Manufacture of surface acoustic wave element
JPH03198356A (en) Resin seal type semiconductor device
JPH0582721A (en) Semiconductor device