JPS6120409A - Manufacture of surface acoustic wave element - Google Patents

Manufacture of surface acoustic wave element

Info

Publication number
JPS6120409A
JPS6120409A JP14064984A JP14064984A JPS6120409A JP S6120409 A JPS6120409 A JP S6120409A JP 14064984 A JP14064984 A JP 14064984A JP 14064984 A JP14064984 A JP 14064984A JP S6120409 A JPS6120409 A JP S6120409A
Authority
JP
Japan
Prior art keywords
electrode
surface acoustic
acoustic wave
electrode fingers
fingers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14064984A
Other languages
Japanese (ja)
Inventor
Nobuyoshi Sakamoto
坂本 信義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP14064984A priority Critical patent/JPS6120409A/en
Publication of JPS6120409A publication Critical patent/JPS6120409A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To prevent the deterioration in characteristic caused by disconnection, and to raise the manufacturing yield by connecting the first and the second bamboo blind-shaped electrode fingers, through a connecting electrode, when forming a bonding pad electrode part. CONSTITUTION:Bamboo blind-shaped electrode fingers A11, A21 arranged interdigitally and a connecting electrode D are formed on a piezoelectric substrate 1 by a photolithographic technique. The inside of a surface acoustic wave transducer A has the same potential since both the electrode fingers are connected electrically by the connecting electrode D. Subsequently, a bonding pad electrode B is prepared, and heat treatment is executed. In these processes, even if a charge is accumulated on the electrode surface of the electrode fingers concerned A11, A21, no current flows since the inside of the transducer A has the same potential. Therefore, disconnection of the electrode finger caused by a current is not generated. When cutting or removing the electrode D, a laser or a photolithographic technique is applied.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、圧電基板を用いて、電気信号を表面弾性波
に、また表面弾性波を電気信号に変換する表面弾性波素
子の製造方法に関する。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for manufacturing a surface acoustic wave element that converts an electrical signal into a surface acoustic wave and a surface acoustic wave into an electrical signal using a piezoelectric substrate. .

(従来の技術) 第3図に従来の表面弾性波変換素子の構成例を示す。1
は圧電基板、Aは表面弾性波変換器、A、、。
(Prior Art) FIG. 3 shows an example of the configuration of a conventional surface acoustic wave conversion element. 1
is a piezoelectric substrate, A is a surface acoustic wave transducer, A...

A21は表面弾性波を励振し又は受信するすだれ状電極
指、Bはボンディングパッド電極を示している。すだれ
状電極指A1.とA21は図示の如く、インターディジ
タルに配列されている。表面弾性波変換器Aより励振さ
れた表面弾性波Cはすだれ状電極指AH+ A21に垂
直に左右に、すだれ状電極指All。
A21 indicates interdigital electrode fingers that excite or receive surface acoustic waves, and B indicates a bonding pad electrode. Interdigital electrode fingers A1. and A21 are arranged in an interdigital manner as shown. The surface acoustic wave C excited by the surface acoustic wave transducer A is perpendicular to the interdigital electrode fingers AH+ A21, and is transmitted to the left and right of the interdigital electrode fingers All.

A21下を伝搬する。また表面弾性波は基板の表面近傍
に集中して伝搬するため1表面形状の影響を受けやすい
。すだれ状電極指A1□、A2、の電極膜厚を増せば、
電極金属の質量付荷効果により、表面弾性波Cの伝搬損
失が増加し、電極膜厚を薄くすれば、導体抵抗増による
損失が増加する。通常、すだれ状電極指Al7. A2
1の電極膜厚は](XX) A前後に設定される。また
表面弾性波素子をパッケージに実装する際にワイヤボン
ディング技術が使われる。
It propagates under A21. Furthermore, since surface acoustic waves propagate concentrated near the surface of the substrate, they are easily influenced by the shape of one surface. If the electrode film thickness of the interdigital electrode fingers A1□ and A2 is increased,
The propagation loss of the surface acoustic wave C increases due to the mass loading effect of the electrode metal, and if the electrode film thickness is made thinner, the loss due to increased conductor resistance increases. Usually, interdigital electrode fingers Al7. A2
The electrode film thickness of No. 1 is set around ](XX)A. Wire bonding technology is also used when mounting surface acoustic wave devices on packages.

ワイヤボンディングに必要な金属膜厚は2CXX)A以
上必要である。従って、表面弾性波素子はすだれ状電極
指A、、、 A21とボンディングパッド電極Bの二層
電極構造が用いられる。電極作成方法としてフォトリン
グラフィ技術が用いられ、前処理工程においては、基板
温度を50°−1(1)℃前後に上げる必要もある。
The metal film thickness required for wire bonding is 2CXX)A or more. Therefore, the surface acoustic wave element uses a two-layer electrode structure of interdigital electrode fingers A, . . . A21 and bonding pad electrodes B. Photolithography technology is used as an electrode manufacturing method, and in the pretreatment process, it is also necessary to raise the substrate temperature to around 50°-1(1)°C.

(発明が解決しようとする問題点) しかしながら、ボンディングパッド電極作成時電流が流
れる。この電流のため、すだれ状電極指A、、、 A2
.が電極金属の結晶粒界の移動(マイグレーション)、
あるいは焼損による断線を生じることがある。
(Problems to be Solved by the Invention) However, current flows when forming the bonding pad electrode. Due to this current, the interdigital electrode fingers A,..., A2
.. is the movement (migration) of the crystal grain boundaries of the electrode metal,
Alternatively, wire breakage may occur due to burnout.

また、すだれ状電極指A11+ A21、ボンディング
バノド電極B作成後、圧電基板と電極金属の付着力を増
加させるため、熱処理を行うこともある。この熱処理工
程においても前述の理由により、すだれ状電極指A、、
、 A2.の断線が生じることもある。すだれ状電極指
A、、、、 A2.の断線により、希望の周波数特性が
得られず、また歩留りが悪くなると言う欠点があった。
Further, after the interdigital electrode fingers A11+A21 and the bonding band electrode B are created, heat treatment may be performed in order to increase the adhesion between the piezoelectric substrate and the electrode metal. Also in this heat treatment process, for the above-mentioned reason, the interdigital electrode fingers A,
, A2. Disconnection may occur. Interdigital electrode fingers A, A2. Due to the disconnection of the wire, the desired frequency characteristics cannot be obtained, and the yield rate also deteriorates.

従って、この発明の目的は上記問題点を解決し、断線に
起因する特性劣化防止及び製造歩留りの向上にある。
Therefore, an object of the present invention is to solve the above-mentioned problems, prevent deterioration of characteristics due to wire breakage, and improve manufacturing yield.

(問題点を解決するための技術的手段)上記問題点を解
決するためのこの発明の技術的手段は、圧電基板上に第
1及び第2のすだれ状電極指をインターディジタルに配
列するとともに両電極指間を電気的に接続する接続電極
を形成し、次に前記第1及び第2のすだれ状電極指をそ
れぞれ部分的に覆う第1及び第2のポンディングパノド
電極を形成し、その後前記接続電極を切断もしくは除去
することを特徴とする表面弾性波素子の製造方法にある
(Technical means for solving the problems) The technical means of the present invention for solving the above problems is to interdigitally arrange first and second interdigital electrode fingers on a piezoelectric substrate, and to forming a connecting electrode that electrically connects the electrode fingers, then forming first and second bonding panod electrodes that partially cover the first and second interdigital electrode fingers, respectively; The method of manufacturing a surface acoustic wave device includes cutting or removing the connection electrode.

(作 用) 上記技術的手段は次のように作用する。ボンディングパ
ノド電極部を形成する工程時には、第1及び第2のすだ
れ状電極指は接続電極を介して電気的に接続されている
。従って、ボンディングパッド電極部作成時において、
第1及び第2のすだれ状電極指は同電位に保たれるので
、上記問題点は解消される。また、熱処理における上記
問題点も、同様にして解消される。
(Operation) The above technical means operates as follows. During the step of forming the bonding panode electrode section, the first and second interdigital electrode fingers are electrically connected via the connection electrode. Therefore, when creating the bonding pad electrode section,
Since the first and second interdigital electrode fingers are kept at the same potential, the above problem is solved. Further, the above-mentioned problems in heat treatment are also solved in the same way.

(実施例) 以下、この発明を実施例に基づき図面を参照して説明す
る。
(Example) The present invention will be described below based on an example with reference to the drawings.

第1図はこの発明の第1の実施例で、1は圧電基板、A
は表面弾性波変換器、A)1r A21は表面弾性波を
励起し又は受信するすだれ状電極指、Dは接続電極を示
している。
FIG. 1 shows a first embodiment of the present invention, in which 1 is a piezoelectric substrate, A
is a surface acoustic wave transducer, A) 1r A21 is an interdigital electrode finger that excites or receives surface acoustic waves, and D is a connecting electrode.

第1実施例によれば、まず第1に、圧電基板1上にイン
ターディジタルに配列されるすだれ状電極指A、、、A
2.と接続電極りがフォトリソグラ苑術により形成され
る。この場合、すだれ状電極指A11゜A2、と接続電
極りとは通常同時に作成されるが、別々に作成してもよ
い。表面弾性波変換器Aの内部は、すだれ状電極指Al
lとA21とが接続電極りを介して電気的に接続されて
いるので、同電位になっている。次に、同じくフォトリ
ソグラ泥術によりボンディングパノド電極を作成し、更
に前述A21の電極面に電荷が蓄積したとしても、表面
弾性波変換器A内部は同電位になっているため電流は流
れない。電流に起因するすだれ状電極指A11゜A2□
の断線は生じないと言う利点がある。すだれ状電極指A
、、、 A21は接続電極りにより電気的に短絡されて
いるため、表面弾性波を励損、受信する機能を持ってい
ない。表面弾性波を励娠(受信)するためには、接続電
極りを切断もしくは除去し、電極指A11+ A21を
電気的に分離する必要がある。
According to the first embodiment, first of all, the interdigitated electrode fingers A, .
2. and connecting electrodes are formed by photolithography. In this case, the interdigital electrode fingers A11°A2 and the connecting electrode fingers are usually created at the same time, but they may be created separately. Inside the surface acoustic wave transducer A, interdigital electrode fingers Al
Since 1 and A21 are electrically connected via the connecting electrode, they are at the same potential. Next, a bonding panode electrode is created using the same photolithography technique, and even if charge is accumulated on the electrode surface of A21, no current will flow because the inside of surface acoustic wave transducer A is at the same potential. . Interdigital electrode fingers A11゜A2□ caused by current
This has the advantage that no disconnection occurs. Interdigital electrode finger A
,,, Since A21 is electrically short-circuited by the connecting electrode, it does not have the function of exciting and receiving surface acoustic waves. In order to excite (receive) surface acoustic waves, it is necessary to cut or remove the connecting electrodes and electrically separate the electrode fingers A11+A21.

接続電極りを切断もしくは除去する方法として、レーザ
ーある〜・はフォトリングラフィ技術の適用が考えられ
る。
As a method for cutting or removing the connecting electrode layer, it is possible to apply a laser or photolithography technique.

第1の実施例では、表面弾性波伝搬路に、接続電極りを
布設したが、第2図に示く如く、表面弾性波素子をチッ
プ化するためのスクライブ用導体Eに接続しても、表面
弾性波変換器内部は同電位となり、前述の効果は失われ
ない。また、表面弾性波素子をチップ化すると同時に、
接続電極■)を切断すれば、すだれ状電極指A11+ 
A21が電気的に分離され、表面弾性波素子のチップ化
の後でレーザー等での接続電極りを切断すると言う煩雑
さはなくなる。
In the first embodiment, a connecting electrode was laid on the surface acoustic wave propagation path, but as shown in FIG. The inside of the surface acoustic wave transducer has the same potential, and the above-mentioned effect is not lost. In addition, at the same time as making the surface acoustic wave device into a chip,
If you cut the connecting electrode (■), the interdigital electrode finger A11+
A21 is electrically isolated, and there is no need to cut the connection electrodes using a laser or the like after the surface acoustic wave element is made into a chip.

(発明の効果) 以上説明したように、この発明によれば、ボンディング
バンド電極作成時及び熱処理工程において、表面弾性波
変換器内部が同電位になっているので、焦電効果、静電
誘導による電流が表面弾性波変換器内部を流れず、電流
に起因するマイグレーションあるいは焼損による表面弾
性波励振電極指の断線は生じないと言う利点があり、こ
の結果歩留りは向上し、特に、電極指幅の狭くなる高周
波帯の表面弾性波素子に有効である。
(Effects of the Invention) As explained above, according to the present invention, since the inside of the surface acoustic wave transducer is at the same potential during the bonding band electrode creation and heat treatment process, pyroelectric effect and electrostatic induction The advantage is that no current flows inside the surface acoustic wave transducer, and there is no disconnection of the surface acoustic wave excitation electrode finger due to migration or burnout caused by the current.As a result, the yield is improved, and in particular, the electrode finger width is reduced. This is effective for surface acoustic wave devices in increasingly narrow high frequency bands.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の第1の実施例を説明するための図、
第2図はこの発明の第2の実施例を説明するための図、
及び第3図は従来の表面弾性波素子の構成例である。 1・・・圧電基板、   A・・・表面弾性波変換器、
A 11+ A21・・・すだれ状電極指、B11.ボ
ンディングバノド電極1 C・・・表面弾性波、  D・・・接続電極、E・・・
スクライプ用導体。
FIG. 1 is a diagram for explaining the first embodiment of this invention,
FIG. 2 is a diagram for explaining a second embodiment of the invention,
and FIG. 3 are configuration examples of conventional surface acoustic wave elements. 1... Piezoelectric substrate, A... Surface acoustic wave transducer,
A11+ A21... interdigital electrode fingers, B11. Bonding band electrode 1 C...Surface acoustic wave, D...Connection electrode, E...
Conductor for scribe.

Claims (1)

【特許請求の範囲】[Claims] 圧電基板上に第1及び第2のすだれ状電極指をインター
ディジタルに配列するとともに両電極指間を電気的に接
続する接続電極を形成し、次に前記第1及び第2のすだ
れ状電極指をそれぞれ部分的に覆う第1及び第2のボン
ディングパッド電極を形成し、その後前記接続電極を切
断もしくは除去することを特徴とする表面弾性波素子の
製造方法。
First and second interdigital electrode fingers are interdigitally arranged on the piezoelectric substrate, and a connecting electrode is formed to electrically connect the first and second interdigital electrode fingers. 1. A method of manufacturing a surface acoustic wave device, comprising: forming first and second bonding pad electrodes that partially cover each of the contact electrodes, and then cutting or removing the connection electrodes.
JP14064984A 1984-07-09 1984-07-09 Manufacture of surface acoustic wave element Pending JPS6120409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14064984A JPS6120409A (en) 1984-07-09 1984-07-09 Manufacture of surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14064984A JPS6120409A (en) 1984-07-09 1984-07-09 Manufacture of surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPS6120409A true JPS6120409A (en) 1986-01-29

Family

ID=15273561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14064984A Pending JPS6120409A (en) 1984-07-09 1984-07-09 Manufacture of surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPS6120409A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03293808A (en) * 1990-04-11 1991-12-25 Fujitsu Ltd Production of surface acoustic wave element
JPH04321310A (en) * 1991-01-22 1992-11-11 Nec Corp Surface acoustic wave device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843607A (en) * 1981-09-09 1983-03-14 Hitachi Ltd Manufacture of surface acoustic wave filter
JPS598420A (en) * 1982-07-06 1984-01-17 Citizen Watch Co Ltd Surface acoustic wave element and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843607A (en) * 1981-09-09 1983-03-14 Hitachi Ltd Manufacture of surface acoustic wave filter
JPS598420A (en) * 1982-07-06 1984-01-17 Citizen Watch Co Ltd Surface acoustic wave element and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03293808A (en) * 1990-04-11 1991-12-25 Fujitsu Ltd Production of surface acoustic wave element
JPH04321310A (en) * 1991-01-22 1992-11-11 Nec Corp Surface acoustic wave device

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