JPS5843607A - Manufacture of surface acoustic wave filter - Google Patents
Manufacture of surface acoustic wave filterInfo
- Publication number
- JPS5843607A JPS5843607A JP14098681A JP14098681A JPS5843607A JP S5843607 A JPS5843607 A JP S5843607A JP 14098681 A JP14098681 A JP 14098681A JP 14098681 A JP14098681 A JP 14098681A JP S5843607 A JPS5843607 A JP S5843607A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- surface acoustic
- acoustic wave
- pattern
- wave filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、表面弾性波フィルタの製造方法に係!I)、
!に、放電防止された高歩留りの製造方法を提供するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a surface acoustic wave filter! I),
! Another object of the present invention is to provide a high-yield manufacturing method in which discharge is prevented.
従来、表面弾性波(SAW)フィルタの製造方法におい
て、各種の昇臨プロセスや機械的ストレスのあるプロセ
スでの誘電体基板表面への帯電を低減する丸め、昇温速
度を遅くしたシ、プロセス処理温度を低くし九シ、出来
る限シ、取扱いをていねいに行なって、集電効果等によ
る帯電を低く押えていた。しかし、金属の交差電極寸法
が1μm程度に微細化してくると、帯電電位が結晶表面
内で異なシ、これが交差電極の狭いギャップを通して放
電し、ht電極を傅断すると云う欠点があった。Conventionally, in the manufacturing method of surface acoustic wave (SAW) filters, rounding, processing that slows down the heating rate, and process treatments have been used to reduce charging on the dielectric substrate surface during various ascending processes and processes that involve mechanical stress. By keeping the temperature low and handling as carefully as possible, we kept the charge caused by the current collection effect to a low level. However, as the size of metal cross electrodes becomes finer to about 1 μm, there is a drawback that the charging potential differs within the crystal surface, which discharges through the narrow gap of the cross electrodes and ruptures the HT electrode.
本発明の目的は、上記の点に着目してなされたものであ
ル、金属交差電極間に放電のない高歩留のSAWフィル
タの製造方法を提供することにある。It is an object of the present invention to provide a high-yield method for manufacturing a SAW filter in which no discharge occurs between metal crossing electrodes.
SAWフィルタの材料として使用される誘電体基板は、
比較的、集電率Pも大きい。そこで、本発明では複数の
交差電極で構成される、金属膜間に同電位K”−7−る
放電防止用の電極パタンを設けるととKより、各種プロ
セスでの帯電電荷を中和し、放電による電極の溶断を防
止するものである。The dielectric substrate used as the material for SAW filters is
Comparatively, the current collection rate P is also large. Therefore, in the present invention, by providing an electrode pattern for preventing discharge with the same potential K''-7- between metal films, which is composed of a plurality of crossed electrodes, the electrostatic charge generated in various processes is neutralized. This prevents the electrode from melting due to discharge.
以下、本発明の一実施例を図によシ説明する。Hereinafter, one embodiment of the present invention will be explained with reference to the drawings.
即ち800MHg低損失、帯域通過!ll8AWフィル
タについて例示する。基板1はLITaOs B6゜X
−Yカット単結晶板で、大きさ35■×30■、厚さα
4■の片面鏡面研磨、裏面す600に仕上げしである0
次に金属膜としてAtを結晶表面に厚さ1000人に真
空蒸着し、次にポジ型レジス)AZ−1350Jを塗布
し、90Gで20分間プリベークする。さらに、所望の
マスク又はレチクルを°轡いて、密着露光法か縮小投影
露光法等により露光し、現象並びにポストベーク(12
0G。That is, 800MHg low loss, band pass! An example will be given of the ll8AW filter. Substrate 1 is LITaOs B6°X
-Y-cut single crystal plate, size 35cm x 30cm, thickness α
4 ■ One side mirror polished, back side finished to 600 0
Next, At as a metal film is vacuum-deposited to a thickness of 1000 nm on the crystal surface, and then a positive resist (AZ-1350J) is applied and prebaked at 90G for 20 minutes. Furthermore, the desired mask or reticle is rotated and exposed by contact exposure method or reduction projection exposure method, etc., and the phenomenon and post-bake (12
0G.
20分)11、A tt−リン酸系ケ2カルエツチング
液でエッチするか、あるいはドライエツチングしてパタ
ン2を形成する。その後、後工程として、ダイシング、
グイボンド、さらにワイヤボンドを行なって組立を完了
する。20 minutes) 11. Form pattern 2 by etching with a phosphoric acid-based chemical etching solution or by dry etching. After that, as a post-process, dicing,
Perform wire bonding and then wire bonding to complete the assembly.
図は、上記フィルタのパタン例を示す。主要パタン部3
は、トランスデエーを部(入力・出力電力を表面弾性波
に変換する部分)、反射器部(トランスデユーサ部で発
生した表面弾性波を反射させる九めのもの)、マルチス
トリップカプラ一部(表面波の一部を他に分岐させるた
めのもの)等よシ成11.イ、と8.、二8,8□□、
0〜□、2μmの゛交差電極となつ榛る。その周辺には
ポンディングパッドを構成する電極4,5,6.7が設
けられている。また、スクライプ領域(一つ一つの素子
に分割する境界線)もしくはダイシング本発明による放
電対策パタン10−18が設けられている。本例の放電
対策パタンは、ダイシング等によ〕チップに分割された
後は、門別に切シ離され良シ、消失したシして、8AW
フイルタの本来性能への影響はなかつ九。The figure shows an example of the pattern of the filter. Main pattern part 3
The transducer part (the part that converts the input/output power into surface acoustic waves), the reflector part (the ninth part that reflects the surface acoustic waves generated in the transducer part), and the multi-strip coupler part. (For branching part of the surface wave to other parts) etc. 11. A, and 8. , 28, 8□□,
0 to □, 2 μm cross electrodes. Electrodes 4, 5, 6.7 constituting a bonding pad are provided around it. Further, a scribe area (a boundary line dividing each element) or a dicing pattern 10-18 for preventing discharge according to the present invention is provided. The discharge countermeasure pattern in this example is that after being divided into chips by dicing, etc., they are separated into chips and are divided into 8AW.
There is no effect on the original performance of the filter.
放電対策パタンの導入効果を調べるため、実験として、
試料を200C,10分間加熱台上で加熱麩環した前後
でのAtパタン焼損、電極間放電痕跡を調べた結果、放
電対策パタン1μmでは、改善率20%、また2μmバ
タンでは40%、さらに3μmバタンでは80%であっ
た。In order to investigate the effect of introducing the discharge countermeasure pattern, as an experiment,
As a result of examining the burnout of the At pattern and traces of discharge between the electrodes before and after heating the sample on a heating table at 200C for 10 minutes, the improvement rate was 20% for the discharge countermeasure pattern of 1 μm, 40% for the 2 μm pattern, and 3 μm further. In Batanes, it was 80%.
以上説明した如く一本発明によれば、昇1プロセスによ
って生ずる基板の帯電を放電防止バタ7によって中和出
来るので、微細金属パタンの放電による溶断がな臂肥高
歩留シで8AWフイルタの製作が可能となり苑。As explained above, according to the present invention, since the charge on the substrate caused by the step 1 process can be neutralized by the discharge prevention butter 7, an 8AW filter can be manufactured with a high yield rate without melting due to discharge of the fine metal pattern. is now possible.
なお本実施例では、フィルタ素子に分割された後には、
放電防止パタンか、分断又は消失するよう設計されたバ
タン例番示したが、使用周波数が比較的高い用途では、
放電防止パタンのインピーダンスがその周波数で高くな
るよう、インダクテイプにするか、共振条件を設けるこ
とによシ、直流的にi1各種電極間か短絡されてい為パ
タンとすることも出来る。この場合は、フィルタ素子に
分割後も、そのま\、放電防止パタンを残せるので、素
子完成後の各種一度テストによる放電事故を防止出来る
。In this example, after being divided into filter elements,
I have shown an example of a discharge prevention pattern or a slam designed to break up or disappear, but in applications where the operating frequency is relatively high,
By using an inductance tape or providing resonance conditions so that the impedance of the discharge prevention pattern becomes high at that frequency, it is also possible to create a pattern in which the various electrodes of i1 are short-circuited in terms of direct current. In this case, the discharge prevention pattern can be left as is even after the filter element is divided, so that discharge accidents caused by various tests once the element is completed can be prevented.
図は、本発明の一実施例を説明する図で、放電防止パタ
ンを設けた表面弾性波フィルタのバタン例を示す。The figure is a diagram for explaining one embodiment of the present invention, and shows an example of a button of a surface acoustic wave filter provided with a discharge prevention pattern.
Claims (1)
弾性波フィルタの製造方法において、異なる電極間を同
電位にする放電防止用パタンを設けた仁とを4!像とす
る表面弾性波フィルタの製造方法。In a method for manufacturing a surface acoustic wave filter in which a plurality of intersecting metal finger electrodes are provided on a dielectric plate, a discharge prevention pattern is provided to make the potential between different electrodes the same. A method for manufacturing a surface acoustic wave filter for imaging.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14098681A JPS5843607A (en) | 1981-09-09 | 1981-09-09 | Manufacture of surface acoustic wave filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14098681A JPS5843607A (en) | 1981-09-09 | 1981-09-09 | Manufacture of surface acoustic wave filter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5843607A true JPS5843607A (en) | 1983-03-14 |
Family
ID=15281472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14098681A Pending JPS5843607A (en) | 1981-09-09 | 1981-09-09 | Manufacture of surface acoustic wave filter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5843607A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58187012A (en) * | 1982-04-27 | 1983-11-01 | Toshiba Corp | Manufacture of surface acoustic wave device |
JPS6120409A (en) * | 1984-07-09 | 1986-01-29 | Oki Electric Ind Co Ltd | Manufacture of surface acoustic wave element |
JPS6343390A (en) * | 1986-08-08 | 1988-02-24 | 日本電気株式会社 | Hybrid integrated circuit board |
JPH05299960A (en) * | 1992-04-21 | 1993-11-12 | Sanyo Electric Co Ltd | Manufacture of surface acoustic wave element |
US6486752B1 (en) | 1999-11-04 | 2002-11-26 | Oki Electric Industry Co, Ltd. | Surface acoustic wave filter pattern with grounding via connection lines to dicing lines |
-
1981
- 1981-09-09 JP JP14098681A patent/JPS5843607A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58187012A (en) * | 1982-04-27 | 1983-11-01 | Toshiba Corp | Manufacture of surface acoustic wave device |
JPH029724B2 (en) * | 1982-04-27 | 1990-03-05 | Tokyo Shibaura Electric Co | |
JPS6120409A (en) * | 1984-07-09 | 1986-01-29 | Oki Electric Ind Co Ltd | Manufacture of surface acoustic wave element |
JPS6343390A (en) * | 1986-08-08 | 1988-02-24 | 日本電気株式会社 | Hybrid integrated circuit board |
JPH0515318B2 (en) * | 1986-08-08 | 1993-03-01 | Nippon Electric Co | |
JPH05299960A (en) * | 1992-04-21 | 1993-11-12 | Sanyo Electric Co Ltd | Manufacture of surface acoustic wave element |
US6486752B1 (en) | 1999-11-04 | 2002-11-26 | Oki Electric Industry Co, Ltd. | Surface acoustic wave filter pattern with grounding via connection lines to dicing lines |
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