JPS6249734B2 - - Google Patents

Info

Publication number
JPS6249734B2
JPS6249734B2 JP16304781A JP16304781A JPS6249734B2 JP S6249734 B2 JPS6249734 B2 JP S6249734B2 JP 16304781 A JP16304781 A JP 16304781A JP 16304781 A JP16304781 A JP 16304781A JP S6249734 B2 JPS6249734 B2 JP S6249734B2
Authority
JP
Japan
Prior art keywords
wiring
electrode
power supply
wiring electrode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16304781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5864048A (ja
Inventor
Katsuhiko Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16304781A priority Critical patent/JPS5864048A/ja
Publication of JPS5864048A publication Critical patent/JPS5864048A/ja
Publication of JPS6249734B2 publication Critical patent/JPS6249734B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP16304781A 1981-10-13 1981-10-13 半導体集積回路装置 Granted JPS5864048A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16304781A JPS5864048A (ja) 1981-10-13 1981-10-13 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16304781A JPS5864048A (ja) 1981-10-13 1981-10-13 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5864048A JPS5864048A (ja) 1983-04-16
JPS6249734B2 true JPS6249734B2 (enrdf_load_stackoverflow) 1987-10-21

Family

ID=15766164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16304781A Granted JPS5864048A (ja) 1981-10-13 1981-10-13 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5864048A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59228732A (ja) * 1983-06-10 1984-12-22 Toshiba Corp マスタスライス型半導体装置
JPS62243345A (ja) * 1986-04-15 1987-10-23 Toshiba Corp 半導体集積回路装置
US5687109A (en) * 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
US6124625A (en) 1988-05-31 2000-09-26 Micron Technology, Inc. Chip decoupling capacitor
US6114756A (en) 1998-04-01 2000-09-05 Micron Technology, Inc. Interdigitated capacitor design for integrated circuit leadframes
JPH11330378A (ja) 1998-05-19 1999-11-30 Murata Mfg Co Ltd 半導体装置
US6414391B1 (en) 1998-06-30 2002-07-02 Micron Technology, Inc. Module assembly for stacked BGA packages with a common bus bar in the assembly

Also Published As

Publication number Publication date
JPS5864048A (ja) 1983-04-16

Similar Documents

Publication Publication Date Title
US5168340A (en) Semiconductor integrated circuit device with guardring regions to prevent the formation of an MOS diode
US4954855A (en) Thin film transistor formed on insulating substrate
US4890142A (en) Power MOS transistor structure
KR0161520B1 (ko) 반도체 기억장치
US5598029A (en) Power supply wiring for semiconductor device
US6023086A (en) Semiconductor transistor with stabilizing gate electrode
US4677736A (en) Self-aligned inlay transistor with or without source and drain self-aligned metallization extensions
KR100223600B1 (ko) 반도체 장치 및 그 제조 방법
JPS63129647A (ja) 半導体装置
US5254867A (en) Semiconductor devices having an improved gate
JPS634683A (ja) 電界効果トランジスタ
JPS6249734B2 (enrdf_load_stackoverflow)
US4517731A (en) Double polysilicon process for fabricating CMOS integrated circuits
US4251829A (en) Insulated gate field-effect transistor
JPS62174968A (ja) 半導体装置
US4857975A (en) GaAs field effect transistor having a WSi Schottky gate electrode improved for high-speed operation
KR0148565B1 (ko) 반도체 집적회로 디바이스
JPS59207652A (ja) 半導体集積回路装置およびその製造方法
JP2765871B2 (ja) 半導体装置
JPS5853845A (ja) 半導体集積回路装置
JPS63114172A (ja) 集積回路
KR910007513B1 (ko) 반도체장치의 배선접속부
JPH02228071A (ja) Pチャネル型電界郊果トランジスタを含む半導体装置
US4611237A (en) Semiconductor integrated circuit device
JPS6243552B2 (enrdf_load_stackoverflow)