JPS6248898B2 - - Google Patents
Info
- Publication number
- JPS6248898B2 JPS6248898B2 JP818381A JP818381A JPS6248898B2 JP S6248898 B2 JPS6248898 B2 JP S6248898B2 JP 818381 A JP818381 A JP 818381A JP 818381 A JP818381 A JP 818381A JP S6248898 B2 JPS6248898 B2 JP S6248898B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- metal film
- insulating film
- growth
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP818381A JPS57121253A (en) | 1981-01-21 | 1981-01-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP818381A JPS57121253A (en) | 1981-01-21 | 1981-01-21 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57121253A JPS57121253A (en) | 1982-07-28 |
JPS6248898B2 true JPS6248898B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-10-16 |
Family
ID=11686184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP818381A Granted JPS57121253A (en) | 1981-01-21 | 1981-01-21 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57121253A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6054455A (ja) * | 1983-09-05 | 1985-03-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH0612792B2 (ja) * | 1987-03-10 | 1994-02-16 | 日本電気株式会社 | 半導体装置の配線構造 |
-
1981
- 1981-01-21 JP JP818381A patent/JPS57121253A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57121253A (en) | 1982-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4843034A (en) | Fabrication of interlayer conductive paths in integrated circuits | |
EP0073487B1 (en) | Method for manufacturing three-dimensional semiconductor device | |
US7365006B1 (en) | Semiconductor package and substrate having multi-level vias fabrication method | |
US3456335A (en) | Contacting arrangement for solidstate components | |
JP2001203316A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US4023197A (en) | Integrated circuit chip carrier and method for forming the same | |
US4907066A (en) | Planar tungsten interconnect with implanted silicon | |
US3918148A (en) | Integrated circuit chip carrier and method for forming the same | |
US6455412B1 (en) | Semiconductor contact via structure and method | |
US3766445A (en) | A semiconductor substrate with a planar metal pattern and anodized insulating layers | |
JPS62112323A (ja) | 半導体面に接触を形成する方法 | |
KR100435137B1 (ko) | 두꺼운도체를갖는모노리식마이크로파집적회로를제조하는방법 | |
US3359467A (en) | Resistors for integrated circuits | |
US4884120A (en) | Semiconductor device and method for making the same | |
JPS6248898B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JP2519217B2 (ja) | 相互接続導体を形成する方法 | |
JPH10261712A (ja) | 導電領域の形成方法及び薄膜素子 | |
US5804504A (en) | Method for forming wiring of semiconductor device | |
KR960004078B1 (ko) | 금속박막 적층구조를 사용한 콘택 형성방법 | |
JPS5887848A (ja) | 半導体装置 | |
JPS6379347A (ja) | 半導体装置の製造方法 | |
JPH02170420A (ja) | 半導体素子の製造方法 | |
JPS62222653A (ja) | 半導体装置及びその製造方法 | |
JP2023031643A (ja) | 配線基板およびその製造方法 | |
JPS59208750A (ja) | 半導体装置の配線構造 |