JPS6248063A - バイポ−ラメモリ - Google Patents
バイポ−ラメモリInfo
- Publication number
- JPS6248063A JPS6248063A JP60188915A JP18891585A JPS6248063A JP S6248063 A JPS6248063 A JP S6248063A JP 60188915 A JP60188915 A JP 60188915A JP 18891585 A JP18891585 A JP 18891585A JP S6248063 A JPS6248063 A JP S6248063A
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- polycrystalline silicon
- schottky barrier
- barrier diode
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 10
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910021339 platinum silicide Inorganic materials 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052697 platinum Inorganic materials 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60188915A JPS6248063A (ja) | 1985-08-28 | 1985-08-28 | バイポ−ラメモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60188915A JPS6248063A (ja) | 1985-08-28 | 1985-08-28 | バイポ−ラメモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6248063A true JPS6248063A (ja) | 1987-03-02 |
| JPH0588549B2 JPH0588549B2 (enrdf_load_stackoverflow) | 1993-12-22 |
Family
ID=16232108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60188915A Granted JPS6248063A (ja) | 1985-08-28 | 1985-08-28 | バイポ−ラメモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6248063A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0380564A (ja) * | 1989-08-23 | 1991-04-05 | Nec Corp | 半導体集積回路装置及びその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59188960A (ja) * | 1983-04-11 | 1984-10-26 | Hitachi Ltd | バイポ−ラ型ｒａｍ |
| JPS59202661A (ja) * | 1983-05-04 | 1984-11-16 | Hitachi Ltd | 半導体装置の製造方法 |
-
1985
- 1985-08-28 JP JP60188915A patent/JPS6248063A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59188960A (ja) * | 1983-04-11 | 1984-10-26 | Hitachi Ltd | バイポ−ラ型ｒａｍ |
| JPS59202661A (ja) * | 1983-05-04 | 1984-11-16 | Hitachi Ltd | 半導体装置の製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0380564A (ja) * | 1989-08-23 | 1991-04-05 | Nec Corp | 半導体集積回路装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0588549B2 (enrdf_load_stackoverflow) | 1993-12-22 |
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