JPS6246985B2 - - Google Patents
Info
- Publication number
- JPS6246985B2 JPS6246985B2 JP54091558A JP9155879A JPS6246985B2 JP S6246985 B2 JPS6246985 B2 JP S6246985B2 JP 54091558 A JP54091558 A JP 54091558A JP 9155879 A JP9155879 A JP 9155879A JP S6246985 B2 JPS6246985 B2 JP S6246985B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistance
- contact
- semiconductor
- resistor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9155879A JPS5617052A (en) | 1979-07-20 | 1979-07-20 | Semiconductor resistor device |
| DE19803027332 DE3027332A1 (de) | 1979-07-20 | 1980-07-18 | Widerstand fuer integrierte schaltungen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9155879A JPS5617052A (en) | 1979-07-20 | 1979-07-20 | Semiconductor resistor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5617052A JPS5617052A (en) | 1981-02-18 |
| JPS6246985B2 true JPS6246985B2 (pm) | 1987-10-06 |
Family
ID=14029830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9155879A Granted JPS5617052A (en) | 1979-07-20 | 1979-07-20 | Semiconductor resistor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5617052A (pm) |
| DE (1) | DE3027332A1 (pm) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182918A (ja) * | 1982-04-21 | 1983-10-26 | Toshiba Corp | 電圧分圧回路 |
| JPS58224668A (ja) * | 1982-06-21 | 1983-12-27 | Sukeroku Shokuhin Kk | いかの束根部を主原料とする加工食品およびそれの製造方法 |
| DE3886601T2 (de) * | 1987-07-10 | 1994-06-30 | Philips Nv | Integrierter Linearwiderstand. |
-
1979
- 1979-07-20 JP JP9155879A patent/JPS5617052A/ja active Granted
-
1980
- 1980-07-18 DE DE19803027332 patent/DE3027332A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5617052A (en) | 1981-02-18 |
| DE3027332A1 (de) | 1981-02-05 |
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