JPS6244862B2 - - Google Patents

Info

Publication number
JPS6244862B2
JPS6244862B2 JP57060545A JP6054582A JPS6244862B2 JP S6244862 B2 JPS6244862 B2 JP S6244862B2 JP 57060545 A JP57060545 A JP 57060545A JP 6054582 A JP6054582 A JP 6054582A JP S6244862 B2 JPS6244862 B2 JP S6244862B2
Authority
JP
Japan
Prior art keywords
island
semiconductor material
material layer
oxidizable
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57060545A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58176964A (ja
Inventor
Hiroshi Nozawa
Junichi Matsunaga
Hisahiro Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57060545A priority Critical patent/JPS58176964A/ja
Publication of JPS58176964A publication Critical patent/JPS58176964A/ja
Publication of JPS6244862B2 publication Critical patent/JPS6244862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
JP57060545A 1982-04-12 1982-04-12 相補型ｍｏｓ半導体装置の製造方法 Granted JPS58176964A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57060545A JPS58176964A (ja) 1982-04-12 1982-04-12 相補型ｍｏｓ半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57060545A JPS58176964A (ja) 1982-04-12 1982-04-12 相補型ｍｏｓ半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58176964A JPS58176964A (ja) 1983-10-17
JPS6244862B2 true JPS6244862B2 (OSRAM) 1987-09-22

Family

ID=13145359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57060545A Granted JPS58176964A (ja) 1982-04-12 1982-04-12 相補型ｍｏｓ半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58176964A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113662A (ja) * 1984-06-28 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 相補形ｍｉｓトランジスタ装置及びその製法
JPS63117460A (ja) * 1986-11-05 1988-05-21 Nec Corp 半導体集積回路装置の製造方法
JP2812388B2 (ja) * 1988-01-18 1998-10-22 富士通株式会社 Ｓｏｉ半導体装置の製造方法
JP4803866B2 (ja) * 2000-07-31 2011-10-26 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
JPS58176964A (ja) 1983-10-17

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