JPS6244824B2 - - Google Patents
Info
- Publication number
- JPS6244824B2 JPS6244824B2 JP56092859A JP9285981A JPS6244824B2 JP S6244824 B2 JPS6244824 B2 JP S6244824B2 JP 56092859 A JP56092859 A JP 56092859A JP 9285981 A JP9285981 A JP 9285981A JP S6244824 B2 JPS6244824 B2 JP S6244824B2
- Authority
- JP
- Japan
- Prior art keywords
- phototransistor
- layer
- conductivity type
- base region
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56092859A JPS57207384A (en) | 1981-06-15 | 1981-06-15 | Phototransistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56092859A JPS57207384A (en) | 1981-06-15 | 1981-06-15 | Phototransistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57207384A JPS57207384A (en) | 1982-12-20 |
| JPS6244824B2 true JPS6244824B2 (US06633600-20031014-M00021.png) | 1987-09-22 |
Family
ID=14066150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56092859A Granted JPS57207384A (en) | 1981-06-15 | 1981-06-15 | Phototransistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57207384A (US06633600-20031014-M00021.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4686554A (en) * | 1983-07-02 | 1987-08-11 | Canon Kabushiki Kaisha | Photoelectric converter |
| US5309013A (en) * | 1985-04-30 | 1994-05-03 | Canon Kabushiki Kaisha | Photoelectric conversion device |
-
1981
- 1981-06-15 JP JP56092859A patent/JPS57207384A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57207384A (en) | 1982-12-20 |
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