JPS6244713B2 - - Google Patents
Info
- Publication number
- JPS6244713B2 JPS6244713B2 JP13657378A JP13657378A JPS6244713B2 JP S6244713 B2 JPS6244713 B2 JP S6244713B2 JP 13657378 A JP13657378 A JP 13657378A JP 13657378 A JP13657378 A JP 13657378A JP S6244713 B2 JPS6244713 B2 JP S6244713B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- region
- heterostructure
- face
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 239000000758 substrate Substances 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 6
- 238000003776 cleavage reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 240000002329 Inga feuillei Species 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13657378A JPS5563887A (en) | 1978-11-06 | 1978-11-06 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13657378A JPS5563887A (en) | 1978-11-06 | 1978-11-06 | Light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5563887A JPS5563887A (en) | 1980-05-14 |
| JPS6244713B2 true JPS6244713B2 (es) | 1987-09-22 |
Family
ID=15178413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13657378A Granted JPS5563887A (en) | 1978-11-06 | 1978-11-06 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5563887A (es) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61183977A (ja) * | 1985-02-08 | 1986-08-16 | Toshiba Corp | 発光素子及びその製造方法 |
| JPS6395260U (es) * | 1986-12-11 | 1988-06-20 | ||
| JPS63226977A (ja) * | 1987-03-16 | 1988-09-21 | Nec Corp | 端面発光ダイオ−ド |
| JP4023893B2 (ja) * | 1997-06-06 | 2007-12-19 | 沖電気工業株式会社 | 発光素子アレイ及び発光素子 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4994291A (es) * | 1973-01-10 | 1974-09-06 | ||
| JPS5329666A (en) * | 1976-08-30 | 1978-03-20 | Philips Nv | Method of making semiconductor device |
-
1978
- 1978-11-06 JP JP13657378A patent/JPS5563887A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4994291A (es) * | 1973-01-10 | 1974-09-06 | ||
| JPS5329666A (en) * | 1976-08-30 | 1978-03-20 | Philips Nv | Method of making semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5563887A (en) | 1980-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5321712A (en) | Semiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compound | |
| KR100648392B1 (ko) | 인듐인-계 구조들에서 아연 확산을 차단하기 위한 장벽으로서 인듐인-계 층에서의 알루미늄 스파이크들을 포함하는 전자 디바이스 및 광전자 디바이스 | |
| JPH10126010A (ja) | 半導体レーザ装置の製造方法 | |
| US4525841A (en) | Double channel planar buried heterostructure laser | |
| JP3095545B2 (ja) | 面発光型半導体発光装置およびその製造方法 | |
| JP2980435B2 (ja) | 半導体装置 | |
| US6287884B1 (en) | Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer | |
| EP0536757B1 (en) | Semiconductor laser | |
| US4514896A (en) | Method of forming current confinement channels in semiconductor devices | |
| US5173913A (en) | Semiconductor laser | |
| GB1502953A (en) | Semiconductor device and a method of fabricating the same | |
| JPS6244713B2 (es) | ||
| US4447905A (en) | Current confinement in semiconductor light emitting devices | |
| US4989050A (en) | Self aligned, substrate emitting LED | |
| EP0284684B1 (en) | Inverted channel substrate planar semiconductor laser | |
| JP3801410B2 (ja) | 半導体レーザ素子及びその製造方法 | |
| JP2927661B2 (ja) | スーパールミネッセントダイオード素子およびその製造方法 | |
| US6350629B1 (en) | Optical semiconductor device having active layer and carrier recombination layer different from each other | |
| JP2759275B2 (ja) | 発光ダイオード及びその製造方法 | |
| JPS6218782A (ja) | 埋込み構造半導体レ−ザ | |
| JP3505780B2 (ja) | 半導体発光素子 | |
| JPH0734496B2 (ja) | 半導体レーザ | |
| JPS6261383A (ja) | 半導体レ−ザおよびその製造方法 | |
| EP0526220A1 (en) | Light emitting diode having small emission-spot | |
| JPH04199587A (ja) | 光半導体素子 |