JPS5563887A - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- JPS5563887A JPS5563887A JP13657378A JP13657378A JPS5563887A JP S5563887 A JPS5563887 A JP S5563887A JP 13657378 A JP13657378 A JP 13657378A JP 13657378 A JP13657378 A JP 13657378A JP S5563887 A JPS5563887 A JP S5563887A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- region
- face
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13657378A JPS5563887A (en) | 1978-11-06 | 1978-11-06 | Light-emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13657378A JPS5563887A (en) | 1978-11-06 | 1978-11-06 | Light-emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5563887A true JPS5563887A (en) | 1980-05-14 |
JPS6244713B2 JPS6244713B2 (ja) | 1987-09-22 |
Family
ID=15178413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13657378A Granted JPS5563887A (en) | 1978-11-06 | 1978-11-06 | Light-emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563887A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61183977A (ja) * | 1985-02-08 | 1986-08-16 | Toshiba Corp | 発光素子及びその製造方法 |
JPS6395260U (ja) * | 1986-12-11 | 1988-06-20 | ||
JPS63226977A (ja) * | 1987-03-16 | 1988-09-21 | Nec Corp | 端面発光ダイオ−ド |
US6222208B1 (en) * | 1997-06-06 | 2001-04-24 | Oki Data Corporation | Light-emitting diode and light-emitting diode array |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4994291A (ja) * | 1973-01-10 | 1974-09-06 | ||
JPS5329666A (en) * | 1976-08-30 | 1978-03-20 | Philips Nv | Method of making semiconductor device |
-
1978
- 1978-11-06 JP JP13657378A patent/JPS5563887A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4994291A (ja) * | 1973-01-10 | 1974-09-06 | ||
JPS5329666A (en) * | 1976-08-30 | 1978-03-20 | Philips Nv | Method of making semiconductor device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61183977A (ja) * | 1985-02-08 | 1986-08-16 | Toshiba Corp | 発光素子及びその製造方法 |
JPH055191B2 (ja) * | 1985-02-08 | 1993-01-21 | Tokyo Shibaura Electric Co | |
JPS6395260U (ja) * | 1986-12-11 | 1988-06-20 | ||
JPS63226977A (ja) * | 1987-03-16 | 1988-09-21 | Nec Corp | 端面発光ダイオ−ド |
US6222208B1 (en) * | 1997-06-06 | 2001-04-24 | Oki Data Corporation | Light-emitting diode and light-emitting diode array |
Also Published As
Publication number | Publication date |
---|---|
JPS6244713B2 (ja) | 1987-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0359329A3 (en) | Wide band gap semiconductor light-emitting devices | |
JPS52104091A (en) | Light-emitting semiconductor | |
JPS5563887A (en) | Light-emitting diode | |
EP0886326A3 (en) | Separate hole injection structure for improved reliability light emitting semiconductor devices | |
JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
JPS5574190A (en) | Photoelectro-converting semiconductor device | |
JPS5543883A (en) | High-output photodiode | |
JPS5642388A (en) | Semiconductor light emitting device | |
JPS54117692A (en) | Semiconductor light emitting diode | |
JPS5561078A (en) | Manufacture of guard ring-fitted photodiode | |
JPS5418691A (en) | Manufacture of pn-junction type light emitting diode | |
JPS5513987A (en) | Semiconductor junction laser | |
GB1526452A (en) | Electroluminescent diodes and a method of manufacturing same | |
JPS54152485A (en) | Electrode forming method for gallium phosphide light- emitting diode | |
JPS54107287A (en) | Semiconductor light emission diode | |
JPS57160183A (en) | Light emitting diode | |
JPS55124280A (en) | Method of fabricating light emitting diode | |
JPS5518087A (en) | Semiconductor laser device and manufacture thereof | |
JPS56157077A (en) | Semiconductor light emitting device | |
JPS5696881A (en) | Light emitting diode | |
JPS54107285A (en) | Semiconductor light emission diode | |
JPS5375881A (en) | Compound semiconductor light emitting device | |
JPS5586174A (en) | Semiconductor light transmitting and receiving device | |
JPS5731183A (en) | Compound semiconductor avalanche photodiode | |
JPS5574196A (en) | Semiconductor laser |