JPS6244427B2 - - Google Patents
Info
- Publication number
- JPS6244427B2 JPS6244427B2 JP52120493A JP12049377A JPS6244427B2 JP S6244427 B2 JPS6244427 B2 JP S6244427B2 JP 52120493 A JP52120493 A JP 52120493A JP 12049377 A JP12049377 A JP 12049377A JP S6244427 B2 JPS6244427 B2 JP S6244427B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitor
- semiconductor substrate
- voltage
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004020 conductor Substances 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 24
- 238000003860 storage Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000013500 data storage Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12049377A JPS5454588A (en) | 1977-10-08 | 1977-10-08 | Semiconductor ic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12049377A JPS5454588A (en) | 1977-10-08 | 1977-10-08 | Semiconductor ic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5454588A JPS5454588A (en) | 1979-04-28 |
| JPS6244427B2 true JPS6244427B2 (enrdf_load_stackoverflow) | 1987-09-21 |
Family
ID=14787548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12049377A Granted JPS5454588A (en) | 1977-10-08 | 1977-10-08 | Semiconductor ic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5454588A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS561559A (en) * | 1979-06-19 | 1981-01-09 | Fujitsu Ltd | One-transistor type dynamic memory cell |
| US5214496A (en) * | 1982-11-04 | 1993-05-25 | Hitachi, Ltd. | Semiconductor memory |
| JPS6325881A (ja) * | 1986-07-17 | 1988-02-03 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
| JPS6344755A (ja) * | 1987-08-10 | 1988-02-25 | Chiyou Lsi Gijutsu Kenkyu Kumiai | 半導体集積回路装置 |
| DE19957543C1 (de) | 1999-11-30 | 2001-07-19 | Infineon Technologies Ag | Dreitransistor-DRAM-Zelle und dazugehöriges Herstellungsverfahren |
-
1977
- 1977-10-08 JP JP12049377A patent/JPS5454588A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5454588A (en) | 1979-04-28 |
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