JPS6243551B2 - - Google Patents
Info
- Publication number
- JPS6243551B2 JPS6243551B2 JP42180A JP42180A JPS6243551B2 JP S6243551 B2 JPS6243551 B2 JP S6243551B2 JP 42180 A JP42180 A JP 42180A JP 42180 A JP42180 A JP 42180A JP S6243551 B2 JPS6243551 B2 JP S6243551B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- platinum
- gate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 162
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 89
- 229910052697 platinum Inorganic materials 0.000 claims description 45
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 31
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 27
- 230000005669 field effect Effects 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 238000005275 alloying Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP42180A JPS5698872A (en) | 1980-01-07 | 1980-01-07 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP42180A JPS5698872A (en) | 1980-01-07 | 1980-01-07 | Preparation of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5698872A JPS5698872A (en) | 1981-08-08 |
| JPS6243551B2 true JPS6243551B2 (enrdf_load_stackoverflow) | 1987-09-14 |
Family
ID=11473332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP42180A Granted JPS5698872A (en) | 1980-01-07 | 1980-01-07 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5698872A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60178642A (ja) * | 1984-02-24 | 1985-09-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2687917B2 (ja) * | 1995-02-20 | 1997-12-08 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1980
- 1980-01-07 JP JP42180A patent/JPS5698872A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5698872A (en) | 1981-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4392150A (en) | MOS Integrated circuit having refractory metal or metal silicide interconnect layer | |
| US4818718A (en) | Method of manufacturing semiconductor memory device | |
| JP3039967B2 (ja) | 半導体装置 | |
| JP2842871B2 (ja) | パワーｍｏｓトランジスタ構造 | |
| KR0161520B1 (ko) | 반도체 기억장치 | |
| EP0096734B1 (en) | Stacked complementary metal oxide semiconductor inverter | |
| US4396930A (en) | Compact MOSFET device with reduced plurality of wire contacts | |
| JPH039631B2 (enrdf_load_stackoverflow) | ||
| US4178605A (en) | Complementary MOS inverter structure | |
| JPS6042626B2 (ja) | 半導体装置の製造方法 | |
| US20050184343A1 (en) | MESFETs integrated with MOSFETs on common substrate and methods of forming the same | |
| GB2049279A (en) | Mnos-memory cell | |
| JPH0778975A (ja) | 絶縁ゲート型電界効果トランジスタ | |
| US5631479A (en) | Semiconductor device with laminated refractory metal schottky barrier gate electrode | |
| JPS6243552B2 (enrdf_load_stackoverflow) | ||
| JPS6243551B2 (enrdf_load_stackoverflow) | ||
| JPS62131573A (ja) | 半導体装置 | |
| JPS6136705B2 (enrdf_load_stackoverflow) | ||
| JPS597231B2 (ja) | 絶縁ゲイト型電界効果半導体装置の作製方法 | |
| JPH039572A (ja) | 半導体装置の製造方法 | |
| KR910006751B1 (ko) | 반도체 집적회로장치 및 그의 제조방법 | |
| JPH0644631B2 (ja) | 半導体装置及びその製造方法 | |
| JPH02194561A (ja) | 薄膜半導体装置とその製造方法 | |
| JPS5843574A (ja) | 電界効果トランジスタ | |
| JP3425877B2 (ja) | パワーｍｏｓｆｅｔ及びその製造方法 |