JPS6242446A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPS6242446A
JPS6242446A JP61201401A JP20140186A JPS6242446A JP S6242446 A JPS6242446 A JP S6242446A JP 61201401 A JP61201401 A JP 61201401A JP 20140186 A JP20140186 A JP 20140186A JP S6242446 A JPS6242446 A JP S6242446A
Authority
JP
Japan
Prior art keywords
voltage
substrate
memory device
semiconductor memory
well region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61201401A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346982B2 (enrdf_load_stackoverflow
Inventor
Osamu Minato
湊 修
Seiji Kubo
征治 久保
Toshiaki Masuhara
増原 利明
Masanori Kaneko
正紀 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61201401A priority Critical patent/JPS6242446A/ja
Publication of JPS6242446A publication Critical patent/JPS6242446A/ja
Publication of JPH0346982B2 publication Critical patent/JPH0346982B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP61201401A 1986-08-29 1986-08-29 半導体メモリ装置 Granted JPS6242446A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61201401A JPS6242446A (ja) 1986-08-29 1986-08-29 半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61201401A JPS6242446A (ja) 1986-08-29 1986-08-29 半導体メモリ装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57176145A Division JPS5874071A (ja) 1982-10-08 1982-10-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS6242446A true JPS6242446A (ja) 1987-02-24
JPH0346982B2 JPH0346982B2 (enrdf_load_stackoverflow) 1991-07-17

Family

ID=16440475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61201401A Granted JPS6242446A (ja) 1986-08-29 1986-08-29 半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS6242446A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999000846A1 (en) * 1997-06-27 1999-01-07 Hitachi, Ltd. Semiconductor integrated circuit device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012138370A (ja) * 2012-03-14 2012-07-19 Panasonic Corp 照明器具
JP2013254741A (ja) * 2009-04-24 2013-12-19 Mitsubishi Electric Corp 電気機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013254741A (ja) * 2009-04-24 2013-12-19 Mitsubishi Electric Corp 電気機器
JP2012138370A (ja) * 2012-03-14 2012-07-19 Panasonic Corp 照明器具

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999000846A1 (en) * 1997-06-27 1999-01-07 Hitachi, Ltd. Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPH0346982B2 (enrdf_load_stackoverflow) 1991-07-17

Similar Documents

Publication Publication Date Title
US20070257313A1 (en) Semiconductor memory device including an SOI substrate
US6744661B1 (en) Radiation-hardened static memory cell using isolation technology
US4849801A (en) Semiconductor memory device having increased capacitance for the storing nodes of the memory cells
JPS6025269A (ja) 半導体記憶素子
JPS6136965A (ja) 半導体メモリ装置
JP2518133B2 (ja) スタティック型半導体記憶装置
JPH0252427B2 (enrdf_load_stackoverflow)
JPS6262065B2 (enrdf_load_stackoverflow)
Shimohigashi et al. An n-well CMOS dynamic RAM
Chin et al. An experimental 16-Mbit DRAM with reduced peak-current noise
JPS6242446A (ja) 半導体メモリ装置
JPS6337505B2 (enrdf_load_stackoverflow)
JPS5874071A (ja) 半導体装置
Takada et al. A 4-Mbit DRAM with half-internal-voltage bit-line precharge
US4712123A (en) Dynamic memory device
JPH07263577A (ja) 半導体装置
Lu et al. Plate-noise analysis of an on-chip generated half-VDD biased-plate PMOS cell in CMOS DRAMs
JPS6136709B2 (enrdf_load_stackoverflow)
McPartland et al. Alpha-particle-induced soft errors and 64K dynamic RAM design interaction
JPH02196469A (ja) 半導体装置
JPS58161195A (ja) スタテイツク型半導体記憶装置
JPS62214593A (ja) 半導体記憶装置
JPS6286852A (ja) 積層構造型半導体装置
JPS60182761A (ja) 半導体記憶装置
JPS58125863A (ja) 半導体装置